DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 01 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications • Thick and thin-film circuits. handbook, halfpage DESCRIPTION 2 PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. 3 1 MARKING 1 TYPE NUMBER BR1 BSR31 BR2 BSR33 BR4 3 Bottom view MARKING CODE BSR30 2 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BSR30; BSR31 − −70 V BSR33 − −90 V BSR30; BSR31 − −60 V BSR33 − −80 V collector-emitter voltage open base VEBO emitter-base voltage − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current Ptot total power dissipation Tstg open collector − −200 mA − 1.35 W storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 26 2 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 93 K/W 13 K/W note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −60 V − −100 nA IE = 0; VCB = −60 V; Tj = 150 °C − −50 µA − −100 nA BSR30 10 − BSR31; BSR33 30 − BSR30 40 120 BSR31; BSR33 100 300 BSR30 30 − BSR31; BSR33 50 − collector cut-off current IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain IC = −100 µA; VCE = −5 V; note 1 DC current gain DC current gain IC = −100 mA; VCE = −5 V; note 1 IC = −500 mA; VCE = −5 V; note 1 VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −0.25 IC = −500 mA; IB = −50 mA; note 1 − −0.5 V VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −1 V IC = −500 mA; IB = −50 mA; note 1 − −1.2 V IC = −50 mA; VCE = −10 V; f = 100 MHz 100 − MHz fT transition frequency Note 1. Pulse test: tp = 300 µs; δ < 0.01. 1999 Apr 26 3 V Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 26 EUROPEAN PROJECTION ISSUE DATE 97-02-28 4 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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