AON6924 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6924 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 “ High Side” MOSFET and the Q2 “Low Side” MOSFET with integrated Schottky have been designed for optimal power efficiency.The AON6924 is well suited for use in compact DC/DC converter applications. VDS Q1 30V Q2 30V 85A ID (at VGS=10V) 60A RDS(ON) (at VGS=10V) <5.2mΩ <1.6mΩ RDS(ON) (at VGS = 4.5V) <7.8mΩ <1.9mΩ 100% UIS Tested 100% Rg Tested DFN5X6A Top View Bottom View S2 S2 S2 G2 PIN1 PHASE (S1/D2) D1 D1 D1 G1 D1 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C IDM TA=25°C C Avalanche Energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TA=25°C ±12 V 60 85 38 66 200 510 Steady-State Steady-State 28 22 A 40 68 A 80 231 mJ 31 104 12.5 41.5 2 2.2 1.3 1.4 TJ, TSTG Symbol t ≤ 10s 15 12 A EAS, EAR PDSM TA=70°C Junction and Storage Temperature Range Rev 1: April 2011 ±20 IAS, IAR PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Units V IDSM TA=70°C Avalanche Current Max Q2 30 ID TC=100°C Continuous Drain Current Max Q1 VGS TC=25°C Bottom View RθJA RθJC -55 to 150 Typ Q1 25 50 3.1 www.aosmd.com Typ Q2 20 45 0.9 Max Q1 Max Q2 30 25 60 55 4 1.2 W W °C Units °C/W °C/W °C/W Page 1 of 11 AON6924 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 200 100 nA 2.3 V 4.3 5.2 6.6 8 VGS=4.5V, ID=20A 6.2 7.8 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance mΩ mΩ S 1 V 30 A 1040 1300 1560 pF VGS=0V, VDS=15V, f=1MHz 370 530 690 pF 10 35 60 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω 17 21.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 1.7 VGS=10V, ID=20A Output Capacitance Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 13 VGS=10V, VDS=15V, ID=20A nC 3.9 nC 1.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 16 21 26 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 31 39 47 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 7.2 5 ns 16 ns 20 ns 4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : April 2011 www.aosmd.com Page 2 of 11 AON6924 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 4V 10V VDS=5V 100 80 4.5V 80 60 ID(A) ID (A) 6V 60 40 40 3V 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1.5 5 2 7 3 3.5 4 Normalized On-Resistance 1.8 VGS=4.5V 6 RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 VGS=10V 4 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V ID=20A 2 1.2 10 1 0.8 3 0 5 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 25 50 1.0E+02 ID=20A 1.0E+01 10 40 8 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 6 25°C 1.0E-01 1.0E-02 125°C 1.0E-03 25°C 4 1.0E-04 2 1.0E-05 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1 : April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 11 AON6924 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=20A 8 Ciss Capacitance (pF) VGS (Volts) 1500 6 4 1000 Coss 500 2 Crss 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs RDS(ON) limited TJ(Max)=150°C TC=25°C 100us 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 120 80 40 0.0 0.01 160 Power (W) 100.0 ID (Amps) 5 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 RθJC=4°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 Rev 1 : April 2011 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 Page 4 of 11 AON6924 40 1000 TA=100°C TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TA=125°C TA=150°C 30 20 10 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 70 60 TA=25°C 1000 50 Power (W) Current rating ID(A) 150 40 30 17 5 2 10 100 20 10 10 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 1 0.00001 150 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : April 2011 www.aosmd.com Page 5 of 11 AON6924 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Max 30 0.5 TJ=55°C 100 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 510 Units V VDS=30V, VGS=0V IGSS mA 100 nA 1.5 2.1 V 1.2 1.6 1.9 2.5 VGS=4.5V, ID=20A 1.5 1.9 VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A mΩ mΩ gFS Forward Transconductance VDS=5V, ID=20A 180 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.36 V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance 85 A 6550 8190 9830 pF 630 900 1170 pF 400 670 950 pF 0.3 0.65 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 110 140 170 nC Qg(4.5V) Total Gate Charge 48 60 72 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17 nC 20 nC 15 ns 17 ns 103 ns 18 IF=20A, dI/dt=500A/µs ns 12.5 16 20 27 34 41 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : April 2011 www.aosmd.com Page 6 of 11 AON6924 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 90 10V 80 4.5V 80 70 70 3.5V 60 ID(A) 60 ID (A) VDS=5V 90 2.5V 50 VGS=2.25V 40 50 40 30 30 20 20 10 10 125°C 25°C 0 0 0 1 2 3 4 1.5 5 1.7 Normalized On-Resistance 1.5 RDS(ON) (mΩ ) 2 2.25 2.5 2 1.6 1.4 VGS=4.5V 1.3 1.2 VGS=10V 1.1 1.0 VGS=4.5V ID=20A 1.8 1.6 17 1.4 5 VGS=10V ID=20A2 1.2 10 1 0.8 0 5 10 15 20 25 30 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 1.0E+02 4 ID=20A 1.0E+01 125°C 40 1.0E+00 3 25°C IS (A) RDS(ON) (mΩ ) 1.75 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 2 1.0E-01 1.0E-02 1.0E-03 1 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1 : April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 11 AON6924 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 VDS=15V ID=20A 10000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 8000 6000 4000 2 2000 Crss 0 0 0 30 60 90 120 Qg (nC) Figure 7: Gate-Charge Characteristics 150 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1500 1000.0 10µs RDS(ON) limited 1200 1ms DC 10.0 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.1 1 VDS (Volts) 900 600 300 0 0.0001 0.0 0.01 TJ(Max)=150°C TC=25°C 100µs Power (W) 100.0 ID (Amps) Coss 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.2°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1 : April 2011 www.aosmd.com Page 8 of 11 AON6924 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=125°C TA=150°C 100 80 60 40 20 0 10 0.000001 0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 0 0.001 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 80 1000 60 Power (W) Current rating ID(A) 150 40 20 17 5 2 10 100 10 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0 1 0.00001 0.001 0.1 10 18 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 1 : April 2011 www.aosmd.com Page 9 of 11 AON6924 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.5 1.0E-02 0.4 20A VDS=30V VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 10A 0.3 5A 0.2 IS=1A 1.0E-05 0.1 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 45 7 50 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 16 2 di/dt=800A/µs di/dt=800A/µs 125ºC 30 4 125ºC 25 Irm 20 trr 2 5 10 15 20 25 0.5 0 7 Is=20A 10 15 20 3 trr 18 25ºC 20 4 125ºC 15 trr (ns) Qrr 30 Is=20A 2.5 5 25 25 21 6 125ºC 5 IS (A) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Irm (A) Qrr (nC) 1 8 30 40 30 125ºC S IS (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 35 1.5 25ºC 15 0 125ºC 12 10 3 25ºC trr (ns) 5 Irm (A) 25ºC 25ºC 14 Qrr 35 Qrr (nC) 6 S 40 25ºC 15 2 S 0 125º 12 1.5 3 25ºC 10 25ºC 5 2 Irm 1 200 400 600 800 1000 6 0.5 0 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1 : April 2011 1 S 125º 0 0 9 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 10 of 11 AON6924 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1 : April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 11 of 11