DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG590 • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG590/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 2 Top view MARKING TYPE NUMBER MSB014 CODE BFG590 N38 BFG590/X N44 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 200 mA Ptot total power dissipation Ts ≤ 60 °C − − 400 mW hFE DC current gain IC = 35 mA; VCE = 8 V 50 90 280 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.7 − pF fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz − 5 − GHz GUM maximum unilateral power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 13 − dB |S21|2 insertion power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 11 − dB 1998 Oct 02 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 200 mA Ptot total power dissipation Ts ≤ 60 °C; see Fig.2; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG249 600 handbook, halfpage Ptot (mW) 400 200 0 0 50 100 150 200 Ts ( o C) Fig.2 Power derating curve. 1998 Oct 02 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 MIN. TYP. MAX. UNIT 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 15 − − V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 3 − − V ICBO collector-base leakage current VCB = 10 V; IE = 0 − − 100 nA hFE DC current gain IC = 70 mA; VCE = 8 V; see Fig.3 60 120 250 fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz; see Fig.5 − 5 − GHz Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz; see Fig.4 − 0.7 − pF GUM maximum unilateral power gain; note 1 IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 13 − dB IC = 80 mA; VCE = 4 V; f = 2 GHz; Tamb = 25 °C − 7.5 − dB IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 11 − dB |S21|2 insertion power gain Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 1998 Oct 02 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X MRA749 250 MLC057 1.2 handbook, halfpage handbook, halfpage hFE C re (pF) 200 0.8 150 100 0.4 50 0 10−2 10−1 1 10 IC (mA) 0 102 0 VCE = 8 V. Fig.3 2 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 MLC058 8 handbook, halfpage fT (GHz) 6 4 2 0 10 I C (mA) 102 VCE = 4 V; f = 1 GHz. Fig.5 1998 Oct 02 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X MLC059 30 MLC060 12 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 20 G max 8 G UM G max G UM 10 4 0 0 0 20 40 100 80 I C (mA) 60 0 f = 900 MHz; VCE = 4 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 MLC061 50 100 80 I C (mA) 60 Gain as a function of collector current; typical values. MLC062 50 handbook, halfpage gain gain (dB) G UM 40 40 f = 2 GHz; VCE = 4 V. handbook, halfpage (dB) 20 40 G UM MSG MSG 30 30 20 20 10 10 G max 0 G max 0 102 10 103 f (MHz) 104 IC = 20 mA; VCE = 4 V. Fig.8 1998 Oct 02 102 10 103 f (MHz) 104 IC = 80 mA; VCE = 4 V. Gain as a function of frequency; typical values. Fig.9 6 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 3 GHz 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 5 0.2 40 MHz 0.5 2 135 o 45 o 1 MGC882 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.10 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC805 IC = 80 mA; VCE = 4 V. Fig.11 Common emitter forward transmission coefficient (S21); typical values. 1998 Oct 02 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC803 IC = 80 mA; VCE = 4 V. Fig.12 Common emitter reverse transmission coefficient (S12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 3 GHz 0.2 40 MHz 0.5 2 135 o 5 45 o 1 MGC804 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.13 Common emitter output reflection coefficient (S22); typical values. 1998 Oct 02 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Oct 02 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X NOTES 1998 Oct 02 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/03/pp12 Date of release: 1998 Oct 02 Document order number: 9397 750 04346