Diodes DMN13H750S-7 N-channel enhancement mode mosfet Datasheet

DMN13H750S
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON)
ID
TA = +25°C
0.75Ω @ VGS = 10V
1.0A
0.85Ω @ VGS = 6.0V
0.9A
V(BR)DSS
NEW PRODUCT
NEW PRODUCT
Features and Benefits






130V
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.





Applications




Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.


Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe)
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN13H750S-7
DMN13H750S-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3H7 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
3H7
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN13H750S
Document number: DS37572 Rev. 3 - 2
Mar
3
2016
D
Apr
4
2017
E
May
5
Jun
6
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2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov
N
Dec
D
January 2015
© Diodes Incorporated
DMN13H750S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ID
Value
130
±20
1.0
0.8
ID
1.2
1.0
A
Pulsed Drain Current (10μs Pulse, Duty Cycle ≦1%)
IDM
3.3
A
Maximum Body Diode Continuous Current (Note 6)
IS
1.2
A
NEW PRODUCT
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Unit
V
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
Steady state
t<10s
Steady state
t<10s
(Note 6)
Value
0.77
1.26
163
115
99
70
17.3
-55 to +150
PD
RJA
RJA
RJC
TJ, TSTG
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
130






100
±100
V
nA
nA
VGS = 0V, ID = 250A
VDS = 120V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS (ON)
2.7
0.41
0.43
0.8
4.0
0.75
0.85
1.2
V
Static Drain-Source On-Resistance
2.0




VDS = VGS, ID = 250A
VGS = 10V, ID = 2.0A
VGS = 6.0V, ID = 2.0A
VGS = 0V, IS = 1.0A
Ciss
Coss
Crss
RG



231
19
11



pF
VDS = 25V, VGS = 0V,
f = 1.0MHz

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz









2.3
5.6
0.8
2.0
2.3
1.7
6.6
1.7
26
21

Qg
Qgs
Qgd
nC
VDS = 104V, VGS = 10V,
ID = 2.0A
ns
VDS = 65V, ID = 2.0A,
VGS = 10V, RG = 6.0Ω
ns
nC
VR = 100V, IF=1.0A, di/dt=100A/µs
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR









V
Test Condition
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN13H750S
Document number: DS37572 Rev. 3 - 2
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January 2015
© Diodes Incorporated
DMN13H750S
3
3.0
VGS = 10.0V
VDS=5V
VGS = 6.0V
2.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
2.0
VGS = 4.0V
1.5
1.0
VGS = 3.8V
0.5
2
TA = 125oC
1.5
0.5
TA = -55oC
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.6
0.55
0.5
VGS = 6.0V
0.45
VGS = 10.0V
0.4
0.35
1
2
3
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
1
0.9
0.8
0.7
0.6
0.5
ID = 2.0A
0.4
0.3
0
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
2
4
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.6
1.2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
TA = 150oC
TA = 25oC
VGS = 3.5V
0
TA = 85oC
1
0.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
NEW PRODUCT
2.5
VGS= 10V
TA = 150oC
1
0.8
TA = 125oC
0.6
TA = 85oC
0.4
TA = 25oC
0.2
TA = -55oC
0
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN13H750S
Document number: DS37572 Rev. 3 - 2
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2.4
2.2
2
VGS = 10V, ID=2A
1.8
1.6
VGS = 6V, ID=2A
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Temperature
January 2015
© Diodes Incorporated
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
3.5
1.1
1
0.9
VGS = 6V, ID=2A
0.8
0.7
0.6
VGS = 10V, ID=2A
0.5
0.4
0.3
0.2
3
ID = 1mA
2.5
1.5
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
1000
CT, JUNCTION CAPACITANCE (pF)
3
2.5
IS, SOURCE CURRENT (A)
ID = 250µA
2
-50
VGS = 0V,
TA=150oC
f=1MHz
Ciss
100
2
VGS = 0V,
TA=125oC
1.5
VGS = 0V,
TA=25oC
1
VGS = 0V,
TA=85oC
VGS = 0V,
TA=-55oC
0.5
Coss
10
Crss
1
0
0
0.3
0.6
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
1.2
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
10
PW =100µs
RDS(ON) Limited
Limited
R
DS(ON)
PW =1ms
8
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
NEW PRODUCT
DMN13H750S
6
VDS=104V, ID=2A
4
1
DC
0.1
0.01
2
0
PW =10s
PW =1s
PW =100ms
TJ (MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
PW =10ms
0.001
0
1
2
3
4
5
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
DMN13H750S
Document number: DS37572 Rev. 3 - 2
6
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 12. SOA, Safe Operation Area
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DMN13H750S
NEW PRODUCT
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.5
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=160oC/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
J
K
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
GAUGE PLANE
0.25
a
M
A
L
C
L1
B
D
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMN13H750S
Document number: DS37572 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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© Diodes Incorporated
DMN13H750S
IMPORTANT NOTICE
NEW PRODUCT
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
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DMN13H750S
Document number: DS37572 Rev. 3 - 2
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