^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min) • Static Drain-Source On-Resistance P ImF : RDs<on) = 0.4 n (Max) • Fast Switching Speed f s< 3) ti, !i, i1 I.Gat e 2.Dra in PIW 1 2 2 3,Soi rce TO-22 OC package APPLICATIONS • Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control applications. * B P. _ V -»j F M1k^r; ~eo* A ••;> ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VDSS ARAMETER Drain-Source Voltage (VQS=O) VALUE UNIT 200 V fi ^ U n i ' " " K 1 f Gate-Source Voltage Ves ±30 Drain Current-continuous® Tc=25°C 9 A PD Power Dissipation@Tc=25°C 72 W Max. Operating Junction Temperature Tj Storage Temperature Range Tstg -H V ID 150 •c -55-150 •c c i SYMBOL PARAMETER ! UNIT Rth j-c Thermal Resistance, Junction to Case 1.74 °c/w Rth j-a Thermal Resistance, Junction to Ambient 62.5 =C/W D G [*- * J mm DIIV WIN A B C 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 D F H J MAX IV* - - i G THERMAL CHARACTERISTICS i V \ * *L i K L Q R S U V MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13,40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors N-Channel MOSFET Transistor IRF630B ELECTRICAL CHARACTERISTICS (TC=25'C) SYMBOL PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; lo= 0.25mA Ros(on) Drain-Source On-stage Resistance V GS =10V;I D =4.5A loss Gate Source Leakage Current VGS= ±30V;V DS =0 loss Zero Gate Voltage Drain Current VSD Diode Forward Voltage V(BR)DSS MIN MAX 200 UNIT V 4 V 0.4 Q ±100 nA VDS= 200V; VGS= 0 10 uA IF= 9A; VGS= 0 1.5 V 2