FDMA1027P Dual P-Channel PowerTrench® MOSFET Features General Description • –3.0 A, –20V. RDS(ON) = 120 mΩ @ VGS = –4.5V This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. RDS(ON) = 160 mΩ @ VGS = –2.5V RDS(ON) = 240 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 D1 G2 S2 MicroFET Absolute Maximum Ratings Symbol VDSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGSS Gate-Source Voltage Drain Current ID – Continuous V ±8 V A –2.2 (Note 1a) 1.4 (Note 1b) 0.7 –6 Power Dissipation for Single Operation TJ, TSTG Units –20 (Note 1a) – Pulsed PD Ratings Operating and Storage Junction Temperature Range –55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 027 FDMA1027P 7 in 8 mm 3000 units ©2005 Fairchild Semiconductor Corporation FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET October 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C –20 V mV/°C –12 Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA On Characteristics (Note 2) ID = –250 µA VDS = VGS, ID = –250 µA, Referenced to 25°C –0.4 –0.7 –1.5 V VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 435 pF 80 pF 45 pF mV/°C 2 90 120 172 118 VGS = –4.5 V, ID = –3.0 A VGS = –2.5 V, ID = –2.5 A VGS = –1.8 V, ID = –1.0 A VGS= –4.5 V, ID = –3.0 A, TJ=125°C 120 160 240 160 –20 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 9 18 ns ns tr Turn–On Rise Time 11 19 td(off) Turn–Off Delay Time 15 27 ns tf Turn–Off Fall Time 6 12 ns 4 6 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –3.0 A, nC 0.8 nC 0.9 nC FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –1.1 A IF = –3.0 A, dIF/dt = 100 A/µs (Note 2) –0.8 –1.1 A –1.2 V 17 ns 6 nC Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Electrical Characteristics 3 6 -2.5V VGS = -1.5V -2.0V 5 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -3.0V 4 -1.8V 3 2 -1.5V 1 2.2 1.8 -1.8V -2.0V 1.4 -2.5V -3.0V 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2.5 Figure 1. On-Region Characteristics. -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.28 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 ID = -1.5A 0.22 0.16 o TA = 125 C 0.1 o TA = 25 C 0.04 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 10 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 5 -ID, DRAIN CURRENT (A) -3.5V 1 0.6 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 4 3 o TA = 125 C 2 -55oC 1 o 25 C 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 1 0.1 TA = 125oC 0.01 o 25 C -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Typical Characteristics 700 ID = -3.0A VDS = -5V -15V 3 -10V 2 500 400 Ciss 300 200 Coss 1 100 Crss 0 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) 100us RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 1 VGS = -4.5V SINGLE PULSE o RθJA = 173 C/W TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 20 SINGLE PULSE RθJA = 173°C/W TA = 25°C 40 30 20 10 0 0.0001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 10 0.1 4 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 600 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =173 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Typical Characteristics FDMA1027P Dual P-Channel PowerTrench® MOSFET FDMA1027P Rev C1 (W)