RoHS HER501G THRU HER508G COMPLIANT 高效整流二极管 High Efficient Rectifier ■特征 ■外形尺寸和印记 Outline Dimensions and Mark Features ■ ︵ D A 1 0 2 O D Io 5.0A ● VRRM 50V-1000V ● 耐正向浪涌电流能力高 ●High surge current capability ● ︶ Applications 整流用 Rectifier ● s r e t e m i l i m s e h c n i n i : t i n U ︵ ︶ ■ 极限值（绝对最大额定值） Limiting Values (Absolute Maximum Rating) 参数名称 Item 符号 单位 条件 Symbol Unit Conditions VRRM V IF(AV) A IFSM A Tj ℃ -55~+150 Tstg ℃ -55 ~ +150 反向重复峰值电压 Repetitive Peak Reverse Voltage 正向平均电流 Average Forward Current 正向（不重复）浪涌电流 Surge(Non-repetitive)Forward Current 结温 Junction Temperature 储存温度 Storage Temperature HER50 1G 2G 3G 4G 5G 6G 7G 50 100 200 300 400 600 800 1000 (正弦半波60HZ，电阻负载，Ta （FIG.1）)； (60HZ Half-sine wave, Resistance load,Ta（FIG.1）) (正弦半波60HZ，一个周期， Ta=25℃) (60HZ Half-sine wave,1 cycle,Ta=25℃) 8G 5 150 ■电特性 （Ta=25℃ 除非另有规定） Electrical Characteristics (Ta=25℃ Unless otherwise specified) 参数名称 Item 符号 Symbol 单位 Unit 正向峰值电压 Peak Forward Voltage VFM V 反向峰值电流 Peak Reverse Current IRRM1 反向恢复时间 Reverse Recovery time 热阻(典型) Thermal Resistance(Typical) 结电容 Typical junction capacitance S-A288 Rev. 1.0, 21-Jan-15 IRRM2 μA HER50 测试条件 Test Condition 1G IFM=5.0A VRM=VRRM 2G 3G 1.0 4G 5G 1.3 5 Ta=125℃ 150 trr ns RθJ-A ℃/W 结和环境之间 Between junction and ambient Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 扬州扬杰电子科技股份有限公司 YANGZHOU YANGJIE SEMICONDUCTOR CO.,LTD 7G 8G 1.7 Ta=25℃ IF=0.5A IR=1A IRR=0.25A 6G 50 75 20 85 60 www.21yangjie.com HER501G THRU HER508G ■特性曲线（典型） Characteristics(Typical) ︵ ︶ IFSM A 5 G 03 R5 HE G G- 505 01 R G R5 8 HE HE G- R50 04 E R5 -H HE 06G R5 HE ︶ IO(A FIG.1 正向电流降额曲线 FORWARD CURRENT DERATING CURVE 4 FIG.2 最大正向浪涌冲击耐受力 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 210 180 150 3 8.3ms Single Half Sine Wave JEDEC Method 120 2 90 S 1 0 30 0 0 0 1 0 60 ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 100 50 100 2 4 6 8 10 20 40 60 80 100 周波数 Number of Cycles IR(uA) FIG.3 典型正向特性曲线 TYPICAL FORWARD CHARACTERISTICS IF(A) 1 150 Ta(℃) FIG.4 典型反向特性曲线 TYPICAL REVERSE CHARACTERISTICS 100 HER501G-HER503G 10 HER504G-HER505G 10 HER506G-HER508G Tj =125℃ 1.0 Tj =100℃ 1.0 0.1 Tj =25℃ 0.1 0.01 0.6 TJ=25℃ Pulse width=300us 1% Duty Cycle 0.8 0.001 1.2 1.0 0.01 1.4 1.6 1.8 2.0 HER501G-HER503G HER504G-HER505G HER506G-HER508G 0 20 40 60 VF(V) 80 100 Voltage(%) 反向恢复时间试验电路及测试波形示意图 Diagram of circuit and Testing wave form of reverse recovery time 10Ω 50Ω +0.5 (-) (+) (-) -0.25 1Ω =7 =10 . (+) =1 Ω 22 Ω -1.0 / S-A288 Rev. 1.0, 21-Jan-15 扬州扬杰电子科技股份有限公司 YANGZHOU YANGJIE SEMICONDUCTOR CO.,LTD www.21yangjie.com