SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -75 V Collector-Emitter Voltage VCEO -70 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -5 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Breakdown Voltages V(BR)CBO -75 -100 V IC=-100µ A V(BR)CEO -70 -90 V IC=-10mA* V(BR)EBO -5 -8.5 V IE=-100µ A Cut-Off Currents Saturation Voltages MAX. UNIT CONDITIONS. ICBO -0.1 -10 µA µA VCB=-40V VCB=-40V, Tamb=100°C IEBO -0.1 µA VEB=-4V VCE(sat) -0.30 -0.30 -0.30 -0.45 -0.50 -0.50 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-25mA* IC=-2A, IB=-200mA* VBE(sat) -0.80 -0.95 V IC=-1A, IB=-25mA* 3 - 250 FZT792A FZT792A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.8 IC=-1A, VCE=-2V* 1.6 - (Volts) MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 22 pF VCB=-10V, f=1MHz Switching Times ton toff 35 750 ns ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.6 1.6 0.01 0.1 1 0 0.1 1 10 VCE(sat) v IC +100°C +25°C -55°C VCE=2V 500 250 -55°C +25°C +100°C +175°C 1.6 750 0.4 0.2 1.4 IC/IB=40 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.6 0.01 VCE(sat) v IC 0.6 1.4 0.4 IC - Collector Current (Amps) 0.8 1.2 0.8 IC - Collector Current (Amps) 1.0 1.6 1.0 0.2 0 10 1.4 1.2 1.4 1.2 IC/IB=100 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C 1.6 1.0 - Normalised Gain 160 1.8 Tamb=25°C 0.8 h 100 IC/IB=40 IC/IB=20 IC/IB=10 1.2 - (Volts) fT IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* V 1.4 800 300 250 200 V Transition Frequency V - (Volts) hFE -0.75 CONDITIONS. V Static Forward Current Transfer TYPICAL CHARACTERISTICS MAX. UNIT - (Volts) VBE(on) TYP. V Base-Emitter Turn-On Voltage MIN. - Typical Gain SYMBOL h PARAMETER 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C 10 10 VCE=2V 1 1.0 0.8 0.1 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0 0.01 0.1 1 10 IC - Collector Current (Amps) 0.1 1 V CE 10 - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 251 0.01 3 - 252 100 FZT792A FZT792A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.8 IC=-1A, VCE=-2V* 1.6 - (Volts) MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 22 pF VCB=-10V, f=1MHz Switching Times ton toff 35 750 ns ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.6 1.6 0.01 0.1 1 0 0.1 1 10 VCE(sat) v IC +100°C +25°C -55°C VCE=2V 500 250 -55°C +25°C +100°C +175°C 1.6 750 0.4 0.2 1.4 IC/IB=40 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.6 0.01 VCE(sat) v IC 0.6 1.4 0.4 IC - Collector Current (Amps) 0.8 1.2 0.8 IC - Collector Current (Amps) 1.0 1.6 1.0 0.2 0 10 1.4 1.2 1.4 1.2 IC/IB=100 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C 1.6 1.0 - Normalised Gain 160 1.8 Tamb=25°C 0.8 h 100 IC/IB=40 IC/IB=20 IC/IB=10 1.2 - (Volts) fT IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* V 1.4 800 300 250 200 V Transition Frequency V - (Volts) hFE -0.75 CONDITIONS. V Static Forward Current Transfer TYPICAL CHARACTERISTICS MAX. UNIT - (Volts) VBE(on) TYP. V Base-Emitter Turn-On Voltage MIN. - Typical Gain SYMBOL h PARAMETER 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C 10 10 VCE=2V 1 1.0 0.8 0.1 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0 0.01 0.1 1 10 IC - Collector Current (Amps) 0.1 1 V CE 10 - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 251 0.01 3 - 252 100