ON NCV7381 Flexray bus driver Datasheet

NCV7381
FlexRay) Bus Driver
NCV7381 is a single−channel FlexRay bus driver compliant with
the FlexRay Electrical Physical Layer Specification Rev. 3.0.1,
capable of communicating at speeds of up to 10 Mbit/s. It provides
differential transmit and receive capability between a wired FlexRay
communication medium on one side and a protocol controller and
a host on the other side.
NCV7381 mode control functionality is optimized for nodes
permanently connected to car battery.
It offers excellent EMC and ESD performance.
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KEY FEATURES
General
• Compliant with FlexRay Electrical Physical Layer Specification
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Rev 3.0.1
FlexRay Transmitter and Receiver in Normal−power Modes for
Communication up to 10 Mbit/s
Support of 60 ns Bit Time
FlexRay Low−power Mode Receiver for Remote Wakeup Detection
Excellent Electromagnetic Susceptibility (EMS) Level over Full
Frequency Range. Very Low Electromagnetic Emissions (EME)
Bus Pins Protected against >10 kV System ESD Pulses
Safe Behavior under Missing Supply or No Supply Conditions
Interface Pins for a Protocol Controller and a Host
(TxD, RxD, TxEN, RxEN, STBN, BGE, EN, ERRN)
INH Output for Control of External Regulators
Local Wakeup Pin WAKE
TxEN Time−out
BGE Feedback
Supply Pins VBAT, VCC, VIO with Independent Voltage Ramp Up:
♦ VBAT Supply Parametrical Range from 5.5 V to 50 V
♦ VCC Supply Parametrical Range from 4.75 V to 5.25 V
♦ VIO Supply Parametrical Range from 2.3 V to 5.25 V
Compatible with 14 V and 28 V Systems
Operating Ambient Temperature −40°C to +125°C (TAMB_Class1)
Junction Temperature Monitoring with Two Levels
SSOP−16 Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
FlexRay Functional Classes
•
•
•
•
SSOP−16
DP SUFFIX
CASE 565AE
MARKING DIAGRAM
16
16
NV7381−0
AWLYYWW
G
1
NV7381A0
AWLYYWW
G
1
A
= Assembly Location
WL = Wafer Lot
YYWW = Year / Work Week
G
= Pb−Free Package
PIN CONNECTIONS
1
INH
EN
VIO
TxD
TxEN
RxD
BGE
STBN
VCC
BP
BM
GND
WAKE
VBAT
ERRN
RxEN
(Top View)
ORDERING INFORMATION
Bus Driver Voltage Regulator Control
Bus Driver – Bus Guardian Interface
Bus Driver Logic Level Adaptation
Bus Driver Remote Wakeup
See detailed ordering and shipping information in the package
dimensions section on page 23 of this data sheet.
Quality
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 3
1
Publication Order Number:
NCV7381/D
NCV7381
VIO
VCC
Voltage
Monitoring
VBAT
Thermal
Shutdown
TxD
INH
CC
Module
TxEN
RxD
Transmitter
RxEN
BGE
Module
BGE
BP
Bus Error
Detection
STBN
CONTROL
LOGIC
Host
Module
ERRN
BM
EN
Receiver
VBAT
Wakeup
Detection
WAKE
(Normal mode /
Low−power mode)
NCV7381
GND
Figure 1. Block Diagram
Table 1. PIN DESCRIPTION
Pin
Number
Pin
Name
Pin Type
1
INH
high−voltage analog output
2
EN
digital input
Mode control input; internal pull−down resistor
Supply voltage for digital pins level adaptation
Pin Function
External regulator control output
3
VIO
supply
4
TxD
digital input
Data to be transmitted; internal pull−down resistor
5
TxEN
digital input
Transmitter enable input; when High transmitter disabled; internal pull−up resistor
6
RxD
digital output
7
BGE
digital input
Bus guardian enable input; when Low transmitter disabled; internal pull−down
resistor
8
STBN
digital input
Mode control input; internal pull−down resistor
9
RxEN
digital output
Bus activity detection output; when Low bus activity detected
10
ERRN
digital output
Error diagnosis and status output
11
VBAT
supply
12
WAKE
high−voltage analog input
13
GND
ground
14
BM
high−voltage analog input/output
Bus line minus
15
BP
high−voltage analog input/output
Bus line plus
16
VCC
supply
Receive data output
Battery supply voltage
Local wake up input; internal pull up or pull down
(depends on voltage at pin WAKE)
Ground connection
Bus driver core supply voltage; 5 V nominal
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2
NCV7381
APPLICATION INFORMATION
ECU
INH
VIO
reg.
OUT
CVCC
CVIO
FlexRay
Communication
Controller
Bus Guardian
INH
VCC
reg.
OUT
MCU
VBAT
IN
IN
VIO
VCC
CVBAT
RWAKE1
INH VBAT
RWAKE2
TxD
WAKE
WAKE
TxEN
RxD
NCV7381
RxEN
CMC
BP
BP
BM
BM
BGE
STBN
Host Interface
RBUS1
EN
ERRN
GND
RBUS2
CBUS
GND
Figure 2. Application Diagram
Table 2. RECOMMENDED EXTERNAL COMPONENTS FOR THE APPLICATION DIAGRAM
Component
Function
Min
Typ
Max
Unit
CVBAT
Decoupling capacitor on battery line, ceramic
100
nF
CVCC
Decoupling capacitor on VCC supply line, ceramic
100
nF
CVIO
Decoupling capacitor on VIO supply line, ceramic
100
nF
RWAKE1
Pull−up resistor on WAKE pin
33
kW
RWAKE2
Serial protection resistor on WAKE pin
3.3
kW
RBUS1
Bus termination resistor (Note 1)
47.5
W
RBUS2
Bus termination resistor (Note 1)
47.5
W
CBUS
Common−mode stabilizing capacitor, ceramic (Note 2)
4.7
nF
CMC
Common−mode choke
100
mH
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. Tolerance ±1%, type 0805
2. Tolerance ±20%, type 0805
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3
NCV7381
FUNCTIONAL DESCRIPTION
Operating Modes
correct transition between any mode and the Sleep mode. All
three modes – Standby, Sleep and Go−to−sleep – are referred
to as low−power modes.
The operating mode selected is a function of the host
signals STBN and EN, the state of the supply voltages and
the wakeup detection. As long as all three supplies (VBAT,
VCC, VIO) remain above their respective under−voltage
detection levels, the logical control by EN and STBN pins
shown in Figure 3 applies. Influence of the power−supplies
and of the wakeup detection on the operating modes is
described in subsequent paragraphs.
NCV7381 can switch between several operating modes
depicted in Figure 3. In Normal and Receive−only modes,
the chip interconnects a FlexRay communication controller
with the bus medium for full−speed communication. These
two modes are also referred to as normal−power modes.
In Standby and Sleep modes, the communication is
suspended and the power consumption is substantially
reduced. A wakeup on the bus or through a locally
monitored signal on pin WAKE can be detected and signaled
to the host. Go−to−sleep mode is a temporary mode ensuring
Normal Mode
STBN=H
EN=H
Receive−only Mode
Transmitter: on
Receiver: on
INH: High
Power cons.: normal
EN=H
EN=L
STBN=H
STBN=H
EN=H
EN=L
STBN=L
STBN=L
STBN=H
EN=H
STBN=L
EN=L
Transmitter: off
Receiver: on
INH: High
Power cons.: normal
STBN=H
STBN=H
Standby Mode
Transmitter: off
Receiver: wakeup−detection
INH: High
Power cons.: low
EN=H
EN=L
STBN=L
EN=H
STBN=L
EN=L
STBN=H
EN=L
STBN=L
EN=H
Go−to−sleep Mode
Transmitter: off
Receiver: wakeup−detection
INH: High
Power cons.: low
Power−up
STBN=L, EN=H
for >dGo−to−Sleep
STBN=L, EN=H
for <dGo−to−Sleep
Sleep Mode
Transmitter: off
Receiver: wakeup−detection
INH: floating
Power cons.: low
Figure 3. Operating Modes and their Control by the STBN and EN Pins
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STBN=H
EN=L
NCV7381
Normal
Mode
Receive−Only
Mode
Standby
Mode
Go−to−sleep
Mode
Sleep
Mode
Normal
Mode
STBN
EN
ERRN
Error Flag
Error Flag
Wake Flag
Wake Flag
Error Flag
dGo−to−sleep
dBDModeChange
dBDModeChange dBDModeChange
dBDModeChange
Figure 4. Timing Diagram of Operating Modes Control by the STBN and EN Pins
Power Supplies and Power Supply Monitoring
All three supplies are monitored by under−voltage
detectors with individual thresholds and filtering times both
for under−voltage detection and recovery – see Table 18.
NCV7381 is supplied by three pins. VBAT is the main
supply both for NCV7381 and the full electronic module.
VBAT will be typically connected to the automobile battery
through a reverse−polarity protection. VCC is a 5 V
low−voltage supply primarily powering the FlexRay bus
driver core in a normal−power mode. VIO supply serves to
adapt the logical levels of NCV7381 to the host and/or the
FlexRay communication controller digital signal levels. All
supplies should be properly decoupled by filtering
capacitors − see Figure 2 and Table 2.
Logic Level Adaptation
Level shift input VIO is used to apply a reference voltage
uVDIG = uVIO to all digital inputs and outputs in order to
adapt the logical levels of NCV7381 to the host and/or the
FlexRay communication controller digital signal levels
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5
NCV7381
Internal Flags
The NCV7381 control logic uses a number of internal flags (i.e. one−bit memories) reflecting important conditions or events.
Table 3 summarizes the individual flags and the conditions that lead to a set or reset of the flags.
Table 3. INTERNAL FLAGS
Flag
Set Condition
Reset Condition
Comment
Local
Wakeup
Low level detected on WAKE pin in a low−
power mode
Low−power mode is entered
Remote
Wakeup
Remote wakeup detected on the bus in a
low−power mode
Low−power mode is entered
Wakeup
Local Wakeup flag changes to set
or
Remote Wakeup flag changes to set
Normal mode is entered
or
Low−power mode is entered
or
Any under−voltage flag becomes set
Power−on
Internal power supply of the chip becomes
sufficient for the operation of the control logic
Normal mode is entered
Thermal
Warning
Junction temperature is higher than Tjw
(typ. 140°C) in a normal−power mode
and
VBAT is not in under−voltage
(Junction temperature is below Tjw in
a normal−power mode
or
the status register is read in a low−power
mode)
and
VBAT is not in under−voltage
The thermal warning
flag has no influence
on the bus driver
function
Thermal
Shutdown
Junction temperature is higher than Tjsd
(typ. 165°C) in a normal−power mode
and
VBAT is not in under−voltage
Junction temperature is below Tjsd in
a normal−power mode
and
falling edge on TxEN
and
VBAT is not in under−voltage
The transmitter is
disabled as long as
the thermal shutdown flag is set
TxEN
Timeout
TxEN is Low for longer than dBDTxActiveMax (typ. 1.5 ms) and bus driver is in
Normal mode
TxEN is High or Normal mode is left
The transmitter is
disabled as long as
the timeout flag is set
Bus Error
Transmitter is enabled
and
Data on bus are different from TxD signal
(sampled after each TXD edge)
(Transmitter is enabled
and
Data on bus are identical to TxD signal)
or
Transmitter is disabled
The bus error flag
has no influence on
the bus driver function
VBAT Under−
voltage
VBAT is below the under−voltage threshold
for longer than dBDUVVBAT
VBAT is above the under−voltage threshold
for longer than dBDRVBAT
or
Wake flag becomes set
VCC Under−
voltage
VCC is below the under−voltage threshold for
longer than dBDUVVCC
VCC is above the under−voltage threshold
for longer than dBDRVCC
or
Wake flag becomes set
VIO Under−
voltage
VIO is below the under−voltage threshold for
longer than dUVIO
VIO is above the under−voltage threshold for
longer than dBDRVIO
or
Wake flag becomes set
Error
Any of the following status bits is set:
• Bus error
• Thermal Warning
• Thermal Shutdown
• TxEN Timeout
• VBAT Under−voltage
• VCC Under−voltage
• VIO Under−voltage
All of the following status bits are reset:
• Bus error
• Thermal Warning
• Thermal Shutdown
• TxEN Timeout
• VBAT Under−voltage
• VCC Under−voltage
• VIO Under−voltage
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6
NCV7381
Operating Mode Changes Caused by Internal Flags
FlexRay Bus Driver
Changes of some internal flags described in Table 3 can
force an operating mode transition complementing or
overruling the operating mode control by the digital inputs
STBN and EN which is shown in Figure 3:
• Setting the VBAT or VIO under−voltage flag causes a
transition to the Sleep mode
• Setting the VCC under−voltage flag, while the bus driver
is not in Sleep, causes a transition to the Standby mode
• Reset of the Under−voltage flag (i.e. recovery from
under−voltage) re−enables the control of the chip by
digital inputs STBN and EN.
• Setting of the Wake flag causes the reset of all
under−voltage flags and the NCV7381 transitions to the
Standby mode. The reset of the under−voltage flags
allows the external power supplies to stabilize properly
if, for example, they were previously switched off
during Sleep mode.
NCV7381 contains a fully−featured FlexRay bus driver
compliant with Electrical Physical Layer Specification Rev.
3.0.1. The transmitter part translates logical signals on
digital inputs TxEN, BGE and TxD into appropriate bus
levels on pins BP and BM. A transmission cannot be started
with Data_1. In case the transmitter is enabled for longer
than dBDTxActiveMax, the TxEN Timeout flag is set and the
current transmission is disabled. The receiver part monitors
bus pins BP and BM and signals the detected levels on digital
outputs RxD and RxEN. The different bus levels are defined
in Figure 5. The function of the bus driver and the related
digital pins in different operating modes is detailed in
Table 4 and Table 5.
• The transmitter can only be enabled if the activation of
the transmitter is initiated in Normal mode.
• The receiver function is enabled by entering a
normal−power mode.
uBus
BP
VCC/2
BM
Idle_LP
Idle
Data_0
Data_1
Figure 5. FlexRay Bus Signals
Table 4. TRANSMITTER FUNCTION AND TRANSMITTER−RELATED PINS
Operating Mode
BGE
TxEN
TxD
Transmitted Bus Signal
Standby, Go−to−sleep, Sleep
x
x
x
Idle_LP
Receive−only
x
x
x
Idle
Normal
0
x
x
Idle
1
1
x
Idle
1
0
0
Data_0
1
0
1
Data_1
Table 5. RECEIVER FUNCTION AND RECEIVER−RELATED PINS
Operating Mode
Signal on Bus
Wake flag
RxD
RxEN
Standby, Go−to−sleep, Sleep
x
not set
High
High
x
set
Low
Low
Normal,
Receive−only
Idle
x
High
High
Data_0
x
Low
Low
Data_1
x
High
Low
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NCV7381
Bus Guardian Interface
Bus Driver Remote Wakeup Detection
The interface consists of the BGE digital input signal
allowing a Bus Guardian unit to disable the transmitter and
of the RxEN digital output signal used to signal whether the
communication signal is Idle or not.
During a low−power mode and under the presence of
VBAT voltage, a low−power receiver constantly monitors the
activity on bus pins BP and BM. A valid remote wake−up is
detected when either a wakeup pattern or a dedicated
wakeup frame is received. A valid remote wake−up is also
detected when wake−up pattern has been started in
normal−power mode already.
A wakeup pattern is composed of two Data_0 symbols
separated by Data_1 or Idle symbols. The basic wakeup
pattern composed of Data_0 and Idle symbols is shown in
Figure 6; the wakeup pattern composed of Data_0 and
Data_1 symbols – referred to as “alternative wakeup
pattern” − is depicted in Figure 7.
Bus Driver Voltage Regulator Control
NCV7381 provides a high−voltage output pin INH which
can be used to control an external voltage regulator (see
Figure 2). The pin INH is driven by a switch to VBAT supply.
In Normal, Receive−only, Standby and Go−to−Sleep modes,
the switch is activated thus forcing a High level on pin INH.
In the Sleep mode, the switch is open and INH pin remains
floating. If a regulator is directly controlled by INH, it is
then active in all operating modes with the exception of the
Sleep mode.
uBus
<dWUTimeout
>dWU0Detect
Data_0
Idle(_LP)
Data_0
>dWUIdleDetect
0
uData0_LP
Idle(_LP)
Idle(_LP)
detected
>dWUIdleDetect
Remote wakeup
>dWU0Detect
Figure 6. Valid Remote Wakeup Pattern
<dWUTimeout
>dWUIdleDetect
Data_0
Data_1
>dWU0Detect
>dWUIdleDetect
0
uData0_LP
Idle(_LP)
Data_0
Data_1
detected
>dWU0Detect
Remote wakeup
uBus
Figure 7. Valid Alternative Remote Wakeup Pattern
A remote wakeup will be also detected if NCV7381 receives a full FlexRay frame at 10 Mbit/s with the following payload data:
0xFF, 0xFF, 0xFF, 0xFF, 0xFF, 0x00, 0x00, 0x00, 0x00, 0x00,
0xFF, 0xFF, 0xFF, 0xFF, 0xFF, 0x00, 0x00, 0x00, 0x00, 0x00,
0xFF, 0xFF, 0xFF, 0xFF, 0xFF, 0x00, 0x00, 0x00, 0x00, 0x00,
0xFF, 0xFF, 0xFF, 0xFF, 0xFF, 0xFF
The wakeup pattern, the alternative wakeup pattern and the wakeup frame lead to identical wakeup treatment and signaling.
Local Wakeup Detection
Internal pull−up and pull−down current sources are
connected to WAKE pin in order to minimize the risk of
parasitic toggling. The current source polarity is
automatically selected based on the WAKE input signal
polarity – when the voltage on WAKE stays stable High
(Low) for longer than dWakePulseFilter, the internal current
source is switched to pull−up (pull−down).
The high−voltage input WAKE is monitored in
low−power modes and under the condition of sufficient
VBAT supply level. If a falling edge is recognized on WAKE
pin, a local wakeup is detected. In order to avoid false
wakeups, the Low level after the falling edge must be longer
than dWakePulseFilter in order for the wakeup to be valid.
The WAKE pin can be used, for example, for switch or
contact monitoring.
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8
NCV7381
ERRN Pin and Status Register
Provided VIO supply is present together with either VBAT
or VCC, the digital output ERRN indicates the state of the
internal “Error” flag when in Normal mode and the state of
the internal “Wake” flag when in Standby, Go−to−Sleep or
Sleep. In Receive−only mode ERRN indicates either the
state of the internal “Error” or the wakeup source (See
Table 6).
The polarity of the indication is reversed – ERRN pin is
pulled Low when the “Error” flag is set. The signaling on pin
ERRN functions in all operating modes.
Table 6. SIGNALING ON ERRN PIN
STBN
EN
Conditions
Error flag
Wake flag
ERRN
High
High
−
not set
x
High
set
x
Low
not set
x
High
set
x
Low
x
Set local
High
x
Set remote
Low
x
not set
High
x
set
Low
High
Low
EN has been set to High after previous wakeup
EN has not been set to High after previous wakeup
Low
x
−
Additionally, a full set of internal bits referred to as status
register can be read through ERRN pin with EN pin used as
a clock signal – the status register content is described in
Table 7 while an example of the read−out waveforms is
shown in Figure 8 and Figure 9. The individual status bits are
channeled to ERRN pin with reversed polarity (if a status bit
is set, ERRN is pulled Low) at the falling edge on EN pin (the
status register starts to be shifted only at the second falling
edge). As long as the EN pin toggling period falls in the
dENSTAT range, the operating mode is not changed and the
read−out continues. As soon as the EN level is stable for
more than dBDModeChange, the read−out is considered as
finished and the operating mode is changed according the
current EN value. At the same time, the status register bits
S4 to S10 are reset provided the particular bits have been
read−out and the corresponding flags are not set any more –
see Table 7. The status register read−out always starts with
bit S0 and the exact number of bits shifted to ERRN during
the read−out is not relevant.
Table 7. STATUS REGISTER
Bit Number
Status Bit Content
Note
Reset after Finished
Read−out
S0
Local wakeup flag
reflects directly the corresponding flag
no
S1
Remote wakeup flag
S2
not used; always High
S3
Power−on status
S4
Bus error status
S5
Thermal shutdown status
S6
Thermal warning status
no
S7
TxEN Timeout status
S8
VBAT Under−voltage status
S9
VCC Under−voltage status
S10
VIO Under−voltage status
S11
BGE Feedback
S12−S15
not used; always Low
S16−S23
Version of the NCV7381 analog part
S24−S31
Version of the NCV7381 digital part
the status bit is set if the corresponding flag
was set previously (the respective High level of
the flag is latched in its status counter−part)
yes, if the
corresponding flag is
reset and the bit was
read−out
Normal mode: BGE pin logical state (Note 3)
Other modes: Low
−
no
fixed values identifying the production masks
version
3. The BGE pin state is latched during status register read−out at rising edge of the EN pin.
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9
no
NCV7381
Receive−Only
Normal
Mode
Mode
STBN
dENSTAT_L
dENSTAT_H
EN
Error Flag
S0
S1
dBDModeChange
Sx
Figure 8. Example of the Status Register Read−out (Started with EN High)
Error Flag
reset
ERRN
dEN_ERRN
Status register
dENSTAT
Receive−Only
Mode
STBN
dENSTAT_L
dENSTAT_H
EN
Error Flag
S0
S1
dBDModeChange
Sx
Figure 9. Example of the Status Register Read−out (Started with EN Low)
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10
Error Flag
reset
ERRN
dEN_ERRN
Status register
dENSTAT
NCV7381
Table 8. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Units
uVBAT−MAX
Battery voltage power supply
−0.3
50
V
uVCC−MAX
5 V Supply voltage
−0.3
5.5
V
uVIO−MAX
Supply voltage for VIO voltage level adaptation
−0.3
5.5
V
uDigInMAX
DC voltage at digital inputs (BGE, EN, STBN, TXD, TXEN)
−0.3
5.5
V
DC voltage at digital outputs (ERRN, RxD, RxEN)
−0.3
VIO+0.3
V
uDigOutMAX
iDigOutIN−MAX
Digital output pins input current (VIO = 0 V)
−10
+10
mA
uBMMAX
DC voltage at pin BM
−50
50
V
uBPMAX
DC voltage at pin BP
−50
50
V
uINHMAX
DC voltage at pin INH
−0.3
VBAT+0.3
V
iINHMAX
INH pin maximum load current
−10
−
mA
DC voltage at WAKE pin
−0.3
VBAT+0.3
V
Junction temperature
−40
175
°C
TSTG
Storage Temperature Range
−55
150
°C
MSL
Moisture Sensitivity Level
uWAKEMAX
TJ_MAX
2
−
uESDIEC
System HBM on pins BP and BM (as per IEC 61000−4−2; 150 pF / 330 W)
−10
+10
kV
uESDEXT
Component HBM on pins BP, BM, VBAT and WAKE
(as per EIA−JESD22−A114−B; 100 pF / 1500 W)
−6
+6
kV
uESDINT
Component HBM on all other pins
(as per EIA−JESD22−A114−B; 100 pF / 1500 W)
−4
+4
kV
uVTRAN
Voltage transients, pins BP, BM, VBAT and WAKE.
According to ISO7637−2, Class C (Note 4)
test pulses 1
−100
−
V
test pulses 2a
−
+75
V
test pulses 3a
−150
−
V
test pulses 3b
−
+100
V
Voltage transients, pin VBAT.
According to ISO7637−2
test pulse 5
Load Dump
−
50
V
Overvoltage, pin VBAT, according to ISO16750−2
Jump Start
−
50
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. Test is carried out according to setup in FlexRay Physical Layer EMC Measurement Specification, Version 3.0. This specification is referring
to ISO7637. Test for higher voltages is planned.
Table 9. OPERATING RANGES
Symbol
Parameter
Min
Max
Units
uVBAT−OP
Battery voltage power supply (Note 5)
5.5
50
V
uVCC−OP
Supply voltage 5 V
4.75
5.25
V
uVIO−OP
Supply voltage for VIO voltage level adaptation
2.3
5.25
V
uWAKEOP
DC voltage at WAKE pin
0
VBAT
V
uDigIOOP
DC voltage at digital pins (EN, TXD, TXEN, RXD, RXEN, BGE, STBN, ERRN)
0
VIO
V
50
V
uBMOP
DC voltage at pin BM
−50
uBPOP
DC voltage at pin BP
−50
50
V
uINHOP
DC voltage at pin INH
0
VBAT
V
TAMB
Ambient temperature (Note 6)
−40
125
°C
TJ_OP
Junction temperature
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Full functionality is guaranteed from 5.1 V. See also parameter uBDUVVBAT.
6. The specified range corresponds to TAMB_Class1
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NCV7381
THERMAL CHARACTERISTICS
Table 10. PACKAGE THERMAL RESISTANCE
Symbol
Rating
Value
Unit
RθJA_1
Thermal Resistance Junction−to−Air, JEDEC 1S0P PCB
78
°C/W
RθJA_2
Thermal Resistance Junction−to−Air, JEDEC 2S2P PCB
69
°C/W
ELECTRICAL CHARACTERISTICS
The characteristics defined in this section are guaranteed within the operating ranges listed in Table 9, unless otherwise
specified. Positive currents flow into the respective pin.
Table 11. CURRENT CONSUMPTION
Symbol
Parameter
Conditions
iVBAT−NORM
Current consumption from VBAT
normal−power modes
Typ
Max
Unit
0.65
1.25
mA
low−power modes; TAMB=125°C
75
mA
Sleep mode, VIO = VCC = 0 V;
TAMB = 125°C
80
mA
low−power modes, VIO = VCC = 0 V,
VBAT = 12 V, TJ < 85°C (Note 7)
55
mA
Normal mode – bus signals Idle
15
mA
iVCC−NORM−ACTIVE
Normal mode – bus signals Data_0/1
RBUS = 40−55 W
37
mA
iVCC−REC
Receive−only mode
15
mA
iVCC−LP
low−power modes, TJ < 85°C (Note 7)
8
mA
normal−power modes
1
mA
low−power modes, TJ < 85°C (Note 7)
6
mA
low−power modes; TAMB = 125°C
95
mA
Sleep mode, VIO = VCC = 5 V,
VBAT = 12 V, TJ < 85°C (Note 7)
65
mA
Sleep mode, VIO = VCC = 5 V,
VBAT = 12 V, TJ < 25°C (Note 7)
55
mA
iVBAT−LP
iVCC−NORM−IDLE
iVIO−NORM
Current consumption from VCC
Current consumption from VIO
iVIO−LP
iTot−LP
Total current consumption –
Sum from all supply pins
Min
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Values based on design and characterization, not tested in production
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12
NCV7381
Table 12. TRANSMISSION PARAMETERS
Symbol
Parameter
Conditions
Min
uBDTxactive
Differential voltage |uBP−uBM| when sending
symbol “Data_0” or “Data_1”
uBDTxIdle
Differential voltage |uBP−uBM| when driving
signal “Idle”
RBUS = 40−55 W;
CBUS = 100 pF
Parameters defined in
Figure 10.
dBDTx10
Transmitter delay, negative edge
dBDTx01
Transmitter delay, positive edge
dBDTxAsym
Transmitter delay mismatch,
|dBDTx10−dBDTx01| (Note 8)
dBusTx10
Fall time of the differential bus voltage from
80% to 20%
dBusTx01
Rise time of the differential bus voltage from
20% to 80%
dBusTxDif
Differential bus voltage fall and rise time mismatch |dBusTx10−dBusTx01|
dBDTxia
Transmitter delay idle −> active
dBDTxai
Transmitter delay active −> idle
dBDTxDM
Idle−active transmitter delay mismatch
| dBDTxia − dBDTxai |
dBusTxia
Transition time idle −> active
dBusTxai
Transition time active −> idle
dTxENLOW
Test setup as per
Figure 17 with
RBUS = 40 W;
CBUS = 100 pF
Sum of TXD signal rise
and fall time
(20%−80% VIO)
of up to 9 ns
Parameters defined in
Figure 10.
Typ
Max
Unit
600
2000
mV
0
30
mV
75
ns
75
ns
4
ns
6
18.75
ns
6
18.75
ns
3
ns
75
ns
75
ns
50
ns
30
ns
30
ns
550
650
ns
650
Test setup as per
Figure 17 with
RBUS = 40 W;
CBUS = 100 pF
Parameters defined in
Figure 11.
Time span of bus activity
2600
ms
Absolute maximum output current when BP
shorted to BM – no time limit
RShortCircuit ≤ 1 W
60
mA
iBPGNDShortMax
iBMGNDShortMax
Absolute maximum output current when shorted to GND – no time limit
RShortCircuit ≤ 1 W
60
mA
iBP−5VShortMax
iBM−5VShortMax
Absolute maximum output current when shorted to VBAT = −5 V – no time limit
RShortCircuit ≤ 1 W
60
mA
iBPBAT27ShortMax
iBMBAT27ShortMax
Absolute maximum output current when shorted to VBAT = 27 V – no time limit
RShortCircuit ≤ 1 W
60
mA
iBPBAT48ShortMax
iBMBAT48ShortMax
Absolute maximum output current when shorted to VBAT = 48 V – no time limit
RShortCircuit ≤ 1 W
72
mA
500
W
dBDTxActiveMax
iBPBMShortMax
iBMBPShortMax
RBDTransmitter
Maximum length of transmitter activation
Bus interface equivalent output impedance
(Bus driver simulation model parameter)
31
8. Guaranteed for ±300 mV and ±150 mV level of uBus
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13
105
NCV7381
uTxD
100...4400 ns
100% VIO
50% VIO
0% VIO
dBDTx01
dBDTx10
uBus
uBDTxActive
100%
80%
300 mV
−300 mV
20%
−uBDTxActive
0%
dBusTx01
dBusTx 10
Figure 10. Transmission Parameters (TxEN is Low and BGE is High)
NOTE:
TXD signal is constant for 100..4400 ns before the first edge.
All parameters values are valid even if the test is performed with opposite polarity.
uTxEN
dTxENLOW
100% VIO
50% VIO
0% VIO
dBDTxia
dBDTxai
uBus
−30 mV
−300 mV
−uBDTx
dBusTxai
dBusTxia
Figure 11. Transmission Parameters for Transitions between Idle and Active (TXD is Low)
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14
NCV7381
Table 13. RECEPTION PARAMETERS
Symbol
Parameter
uData0
Receiver threshold for detecting Data_0
uData1
Receiver threshold for detecting Data_1
|uData1|−|uData0|
uData0_LP
Mismatch of receiver thresholds
Low power receiver threshold for detecting
Data_0
uCM
Common mode voltage range (with respect to
GND) that does not disturb the receiver function and reception level parameters
uBias
Bus bias voltage during bus state Idle in
normal−power modes
Bus bias voltage during bus state Idle in
low−power modes
Conditions
Min
Activity detected
previously.
|uBP−uBM| ≤ 3 V
Typ
Max
Unit
−300
−150
mV
150
300
mV
(uBP+uBM)/2 = 2.5 V
−30
30
mV
uVBAT ≥ 7 V
−400
−100
mV
uBP = (uBP+uBM)/2
(Note 9)
−10
15
V
RBUS = 40−55 W;
CBUS = 100 pF
(Note 10)
1800
2500
3200
mV
−200
0
200
mV
10
RCM1, RCM2
Receiver common mode resistance
(Note 10)
40
kW
C_BP, C_BM
Input capacitance on BP and BM pin (Note 11)
f = 5 MHz
20
pF
C_BusDIF
Bus differential input capacitance (Note 11)
f = 5 MHz
5
pF
iBPLEAK
iBMLEAK
Absolute leakage current when driver is off
uBP = uBM = 5 V
All other pins = 0 V
25
mA
iBPLEAKGND
iBMLEAKGND
Absolute leakage current,
in case of loss of GND
uBP = uBM = 0 V
All other pins = 16 V
1600
mA
uBusRxData
Test signal parameters for reception
of Data_0 and Data_1 symbols
400
3000
mV
60
4330
ns
60
4330
ns
22.5
ns
22.5
ns
dBusRx0BD
Test signal and
parameters defined in
Figure 12 and
Figure 13.
dBusRx1BD
dBusRx10
RxD pin loaded with
25 pF capacitor.
dBusRx01
dBDRx10
Receiver delay, negative edge (Note 12)
75
ns
dBDRx01
Receiver delay, positive edge (Note 12)
75
ns
Receiver delay mismatch
| dBDRx10− dBDRx01| (Note 12)
5
ns
400
3000
mV
590
610
ns
dBusIdle
590
610
ns
dBusRxia
18
22
ns
dBDRxAsym
uBusRx
dBusActive
Test signal parameters for
bus activity detection
dBusRxai
18
22
ns
Bus driver filter−time for idle detection
50
200
ns
Bus driver filter−time for activity detection
100
250
ns
dBDRxai
Bus driver idle reaction time
50
275
ns
dBDRxia
Bus driver activity reaction time
100
325
ns
325
ns
dBDIdleDetection
dBDActivityDetection
dBDTxRxai
Idle−Loopdelay
9. Tested on a receiving bus driver. Sending bus driver has a ground offset voltage in the range of [−12.5 V to +12.5 V] and sends a 50/50 pattern.
10. Bus driver is connected to GND and uVCC = 5 V and uVBAT ≥ 7 V.
11. Values based on design and characterization, not tested in production.
12. Guaranteed for ±300 mV and ±150 mV level of uBus.
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15
NCV7381
Table 14. REMOTE WAKEUP DETECTION PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Detection time for Wakeup Data_0 symbol
1
4
ms
Detection time for Wakeup Idle/Data_1 symbol
1
4
ms
dWUTimeout
Maximum accepted Wakeup pattern duration
48
140
ms
dWUInterrupt
Acceptance timeout for interruptions
0.13
1
ms
uVBAT−WAKE
Minimum supply voltage VBAT for remote wakeup
events detection
−
5.5
V
Reaction time after remote wakeup event
7
35
ms
dWU0Detect
dWUIdleDetect
dBDWakeup
Reactionremote
(Note 13)
13. The minimum value is only guaranteed, when the phase that is interrupted was continuously present for at least 870 ns.
Table 15. TEMPERATURE MONITORING PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tjw
Thermal warning level
125
140
150
°C
Tjsd
Thermal shut−down level
155
165
185
°C
dBusRx10
uBus
dBusRx01
uBusRxData
300 mV
150 mV
−150 mV
−300 mV
−uBusRxData
dBusRx0BD
dBusRx1BD
uRxD
dBDRx10
dBDRx01
100% VIO
50% VIO
0% VIO
Figure 12. Reception Parameters
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16
NCV7381
dBusRxia
uBus
dBusRxai
−30 mV
−150 mV
−300 mV
−uBusRx
dBusActive
uRxD
dBusIdle
dBDRxia
dBDRxai
100% VIO
50% VIO
0% VIO
uRxEN
100% VIO
50% VIO
0% VIO
Figure 13. Parameters of Bus Activity Detection
Table 16. WAKE PIN PARAMETERS
Symbol
uVBAT−WAKE
uWAKETH
Parameter
Conditions
Min
Typ
Minimum supply voltage VBAT for local
wakeup events detection
Threshold of wake comparator
Max
Unit
7
V
VBAT/2
V
dBDWakePulseFilter
Wake pulse filter time (spike rejection)
1
500
ms
dBDWakeup
Reactionlocal
Reaction time after local wakeup event
14
50
ms
uWAKE = 0 V for longer
than dWakePulseFilter
3
11
mA
uWAKE = VBAT for longer
than dWakePulseFilter
−11
−3
mA
iWAKEPD
Internal pull−down current
iWAKEPU
Internal pull−up current
Table 17. INH PIN PARAMETERS
Symbol
uINH1Not_Sleep
iINH1LEAK
Parameter
Voltage on INH pin, when signaling
Not_Sleep
Conditions
Min
Typ
Max
Unit
iINH = −5 mA
uVBAT > 5.5 V
uVBAT −
0.6
uVBAT
−0.27
uVBAT
−0.1
V
5
mA
Max
Unit
Leakage current while signaling Sleep
−5
Table 18. POWER SUPPLY MONITORING PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
uBDUVVBAT
VBAT under−voltage threshold
4
5.1
V
uBDUVVCC
VCC under−voltage threshold
4
4.5
V
uUVIO
VIO under−voltage threshold
2
2.3
V
uBDUVVBAT−WAKE
VBAT under−voltage threshold for correct
detection of the local wakeup
5
7
V
uUV_HYST
Hysteresis of the under−voltage detectors
20
200
mV
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17
100
NCV7381
Table 18. POWER SUPPLY MONITORING PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
dBDUVVCC
VCC Undervoltage detection time
150
350
750
ms
dBDUVVIO
VIO Undervoltage detection time
150
350
750
ms
dBDUVVBAT
VBAT Undervoltage detection time
350
750
1500
ms
dBDRVCC
VCC Undervoltage recovery time
1.5
4.5
ms
dBDRVIO
VIO Undervoltage recovery time
1
ms
VBAT Undervoltage recovery time
1
ms
dBDRVBAT
Table 19. HOST INTERFACE PARAMETERS
Symbol
dBDModeChange
dGo−to−Sleep
dReactionTimeERRN
Parameter
Conditions
Min
Typ
Max
Unit
EN and STBN level filtering time for
operating mode transition
21
65
ms
Go to Sleep mode timeout
14
33
ms
Error detected
33
ms
Wakeup detected or
Mode changed
1
ms
Reaction time on ERRN pin
Digital Input Signals
Table 20. DIGITAL INPUT SIGNALS VOLTAGE THRESHOLDS (Pins EN, STBN, BGE, TxEN)
Symbol
Parameter
uVDIG−IN−LOW
Low level input voltage
uVDIG−IN−HIGH
High level input voltage
Conditions
Min
uVDIG = uVIO
Typ
Max
Unit
−0.3
0.3*VIO
V
0.7*VIO
5.5
V
Table 21. EN PIN PARAMETERS
Symbol
Parameter
RPD_EN
Pull−down resistance
iENIL
Low level input current
Conditions
uEN = 0 V
Min
Typ
Max
Unit
50
110
200
kW
−1
0
1
mA
20
ms
dENSTAT
EN toggling period for status register
read−out
2
dENSTAT_L,
dENSTAT_H
Duration of EN Low and High level for
status register read−out
1
dEN_ERRN
Delay from EN falling edge to ERRN
showing valid signal during status register read−out
ms
1
ms
Table 22. STBN PIN PARAMETERS
Symbol
Parameter
RPD_STBN
Pull−down resistance
iSTBNIL
Low level input current
Conditions
Min
Typ
Max
Unit
50
110
200
kW
uSTBN = 0 V
−1
0
1
mA
Conditions
Min
Typ
Max
Unit
200
320
450
kW
−1
0
1
mA
Table 23. BGE PIN PARAMETERS
Symbol
Parameter
RPD_BGE
Pull−down resistance
iBGEIL
Low level input current
uBGE = 0 V
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NCV7381
Table 24. TxD PIN PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
uBDLogic_0
Low level input voltage
−0.3
0.4*Vio
V
uBDLogic_1
High level input voltage
0.6*Vio
5.5
V
20
kW
RPD_TxD
Pull−down resistance
C_BDTxD
Input capacitance on TxD pin (Note 14)
iTxDLI
5
11
10
pF
uTXD = 0 V
−1
0
1
mA
Conditions
Min
Typ
Max
Unit
50
110
200
kW
uTXEN = VIO
−1
0
1
mA
uTxEN = 5.25 V, VIO = 0 V
−1
0
1
mA
Typ
Max
Unit
f = 5 MHz
Low level input current
14. Values based on design and characterization, not tested in production
Table 25. TxEN PIN PARAMETERS
Symbol
RPU_TxEN
iTxENIH
iTxENLEAK
Parameter
Pull−up resistance
High level input current
Input leakage current
Digital Output Signals
Table 26. DIGITAL OUTPUT SIGNALS VOLTAGE LIMITS (Pins RXD, RxEN and ERRN)
Symbol
Parameter
Conditions
Min
uVDIG−OUT−LOW
Low level output voltage
iRxDOL = 6 mA
iRxENOL = 5 mA
iERRNOL = 0.7 mA
(Note 15)
0
0.2*VIO
V
uVDIG−OUT−HIGH
High level output voltage
iRxDOH = −6 mA
iRxENOH = −5 mA
iERRNOH = −0.7 mA
(Note 15)
0.8*VIO
VIO
V
uVDIG−OUT−UV
Output voltage on a digital output when
VIO in undervoltage
RLOAD = 100 kW to GND,
Either VCC or VBAT supplied
500
mV
uVDIG−OUT−OFF
Output voltage on a digital output when
unsupplied
RLOAD = 100 kW to GND
500
mV
Max
Unit
6.5
ns
6.5
ns
15. uVDIG = uVIO. No undervoltage on VIO and either VCC or VBAT supplied.
Table 27. RxD PIN PARAMETERS
Symbol
Parameter
Conditions
dBDRxDR15
RXD signal rise time (20%−80% VIO)
dBDRxDF15
RXD signal fall time (20%−80% VIO)
RxD pin loaded with
15 pF capacitor
(Note 16)
Min
Typ
dBDRxDR15 +
dBDRxDF15
Sum of rise and fall time
(20%−80% VIO)
13
ns
|dBDRxDR15 −
dBDRxDF15|
Difference of rise and fall time
5
ns
8.5
ns
8.5
ns
16.5
ns
5
ns
16.5
ns
5
ns
dBDRxDR25
RXD signal rise time (20%−80% VIO)
dBDRxDF25
RXD signal fall time (20%−80% VIO)
dBDRxDR25 +
dBDRxDF25
Sum of rise and fall time
(20%−80% VIO)
|dBDRxDR25 −
dBDRxDF25|
Difference of rise and fall time
dBDRxDR25_10 +
dBDRxDF25_10
RXD signal sum of rise and fall time at
TP4_CC (20%−80% VIO)
|dBDRxDR25_10 −
dBDRxDF25_10|
RXD signal difference of rise and fall
time at TP4_CC (20%−80% VIO)
RxD pin loaded with
25 pF capacitor
RxD pin loaded with 25 pF
capacitor plus 10 pF at the
end of a 50 W, 1 ns
microstripline
(Note 17)
16. Values based on design and characterization, not tested in production
17. Simulation result. Simulation performed within TJ_OP range, according to FlexRay Electrical Physical Layer Specification, Version 3.0.1
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19
NCV7381
TYPICAL CHARACTERISTICS
700
1200
TEMP = 25°C
VIO = 3.3 V
TEMP = 25°C
600
VIO − uRxDOH (mV)
500
VIO = 5 V
400
300
200
800
VIO = 5 V
600
400
200
100
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
iRxDOL (mA)
−iRxDOH (mA)
Figure 14. RxD Low Output Characteristic
Figure 15. RxD High Output Characteristic
300
VBAT = 14 V
TEMP = 25°C
250
VBAT − uINH (mV)
uRxDOL (mV)
VIO = 3.3 V
1000
VBAT = 4.9 V
200
150
100
50
0
0
1
2
3
4
−iINH (mA)
Figure 16. INH Not_Sleep Output
Characteristic
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20
5
30
NCV7381
5 VDC
12 VDC
10 mF
100 nF
VIO
VCC
VBAT
BP
RBUS
NCV7381
CBUS
RxD
BM
25 pF
GND
Figure 17. Test Setup for Dynamic Characteristics
5 VDC
3.3 VDC
22 mF
100 nF
22 mF
100 nF
100 nF
VIO
VCC
ISO 7637−2
pulse
generator
22 mF
330 pF
VBAT
BP
RBUS
56 W
NCV7381
RxD
BM
15 pF
330 pF
GND
Figure 18. Test Setup for Measuring the Transient Immunity
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21
ISO 7637−2
pulse
generator
NCV7381
PACKAGE DIMENSIONS
SSOP 16
CASE 565AE
ISSUE O
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22
NCV7381
ORDERING INFORMATION
Part Number
NCV7381DP0G
NCV7381DP0R2G
Description
Clamp 30 FlexRay
Transceiver
Container†
Temperature
Range
Package
Type
Quantity
−40°C to +125°C
SSOP 16 GREEN
Tube
76
Tape & Reel
2000
Tape & Reel
2000
NCV7381ADP0R2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
FlexRay is a registered trademark of Daimler Chrysler AG.
ON Semiconductor and
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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NCV7381/D