UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-P-T3P-T MJE13009G-P-T3P-T MJE13009L-P-TA3-T MJE13009G-P-TA3-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-3P TO-220 Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 1 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 700 V Emitter Base Voltage VEBO 9 V 12 Continuous IC A Collector Current Peak (Note 3) ICM 24 Continuous IB 6 Base Current A Peak (Note 3) IBM 12 18 Continuous IE A Emitter Current Peak (Note 3) IEM 36 TO-220 2 Power Dissipation W TO-3P 80 PD TO-220 16 Derate above 25°C mW/°C TO-3P 640 Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-3P TO-220 TO-3P θJA θJC RATINGS 54 21 4 1.55 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector- Emitter Sustaining Voltage Collector Cutoff Current VCBO=Rated Value Emitter Cutoff Current ON CHARACTERISTICS (Note) DC Current Gain SYMBOL VCEO ICEV IEBO hFE1 hFE 2 Current-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) TEST CONDITIONS IC = 10mA, IB = 0 VBE(OFF) = 1.5VDC VBE(OFF) = 1.5VDC, TC = 100°C VEB = 9VDC, IC = 0 IC = 5A, VCE = 5V IC = 8A, VCE = 5V IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 8A, IB = 1.6A, TC = 100°C IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = 100°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 1 5 1 40 30 1 1.5 3 2 1.2 1.6 1.5 mA mA V V V V V V V 2 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS Transition frequency fT IC = 500mA, VCE = 10V, f = 1MHz Output Capacitance COB VCB = 10V, IE = 0, f = 0.1MHz SWITCHING CHARACTERISTICS (Resistive Load, Table 1) Delay Time tDLY VCC = 125Vdc, IC = 8A Rise Time tR IB1 = IB2 = 1.6A, tP = 25μs Storage Time tS Duty Cycle ≤1% Fall Time tF Inductive Load, Clamped (Table 1, Fig. 13) Voltage Storage Time tS IC=8A, VCLAMP=300V, IB1=1.6A VBE(OFF) = 5V, TC = 100°C Crossover Time tC Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 180 MHz pF 4 0.06 0.45 1.3 0.2 0.1 1 3 0.7 µs µs µs µs 0.92 0.12 2.3 0.7 µs µs 3 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +5V VCC 33 1N4933 MJE210 TEST CIRCUITS 0.001µF 5V 2N2222 VCLAMP IC RB 1k 68 1k +5V 1N4933 0.02µF Note: PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 *SELECTED FOR . 1 kV VCE D.U.T. 1k 270 5.1k IB 2N2905 CIRCUIT VALUES MR826* 33 1N4933 PW DUTY CYCLE ≤ 10% tR, tF ≤ 10 ns L 47 1/2W 51 MJE200 100 -VBE(OFF) GAP for 200μH/20A LCOIL = 200μH VCC = 20V VCLAMP = 300VDC VCC = 125V RC = 15Ω D1 = 1N5820 or Equiv. RB = Ω TEST WAVEFORMS +10V 25µs 0 -8V tR, tF < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% 24A SERIES SWITCHING REGULATOR PD = 4000 W 2 TC = 100°C 350V TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(OFF) ≤ 9.0 V DUTY CYCLE ≤ 10% 12A TURN–ON VCC VOUT TURN–OFF + VCC 400V 1 700V 1 COLLECTOR VOLTAGE RINGING CHOKE INVERTER VCC TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% 24A VOUT N TC = 100 C IC PD = 4000 W 2 12A TURN–OFF tOFF tON 350V TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% TURN–ON + VCC VCC+N(VOUT) t LEAKAGE SPIKE VCE VCC+ N(VO) VCC 400V 1 700V 1 COLLECTOR VOLTAGE t PUSH–PULL INVERTER/CONVERTER VOUT VCC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R223-008, A MJE13009-P TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE IC(A) 3 5 8 12 NPN SILICON TRANSISTOR TC(°C) 25 100 25 100 25 100 25 100 tSV(ns) 770 1000 630 820 720 920 640 800 tRV(ns) 100 230 72 100 55 70 20 32 tFI(ns) 150 160 26 55 27 50 17 24 tTI(ns) 200 200 10 30 2 8 2 4 tC(ns) 240 320 100 180 77 120 41 54 SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tSV = Voltage Storage Time, 90% IB1 to 10% VCEM tRV = Voltage Rise Time, 10–90% VCEM tFI = Current Fall Time, 90–10% ICM tTI = Current Tail, 10–2% ICM tC = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tC) f Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which are guaranteed at 100°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR TYPICAL CHARATERISTICS Collector, IC (A) Collector Current, IC (A) Fig. 3 Forward Bias Power Derating 1 Second Breakdown Derating 0.6 Thermal Derating 0.4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC (°C) Fig. 4 Typical Thermal Response [ZθJC(t)] Transient Thermal Resistance (Normalized), r(t) Power Derating Factor 0.8 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 1 may be found at any case temperature by using the appropriate curve on Fig. 3. TJ(PK) may be calculated from the data in Fig. 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Fig. 2) is discussed in the applications information section. 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(PK) ZθJC(t) = r(t) θJC θJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(PK) – TC = P(PK) ZθJC(t) Duty Cycle, D = t1/t2 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 Single Pulse 0.02 0.05 0.1 0.2 0.5 1 2 5 Time, t (ms) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 20 50 100 200 500 1.0k 7 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR DC Current Gain, hFE Collector-Emitter Voltage, VCE (V) TYPICAL CHARACTERISTICS (Cont.) Fig. 9 Collector Cutoff Region Fig. 10 Capacitance 10k 4k TJ = 25°C 2k 1k TJ = 150°C 100 Capacitance, C (pF) Collector Current, IC (mA) VCE = 250V 125°C 100°C 10 75°C 50°C 1 25°C 0.1 -0.4 REVERSE FORWARD -0.2 0 +0.2 +0.4 Base–Emitter Voltage, VBE (V) +0.6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw CIB 1k 800 600 400 200 COB 100 80 60 40 0.1 0.2 0.5 1 2 5 10 20 50 100 Reverse Voltage, VR (V) 200 500 8 of 9 QW-R223-008, A MJE13009-P NPN SILICON TRANSISTOR ■ RESISTIVE SWITCHING PERFORMANCE UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R223-008, A