A Product Line of Diodes Incorporated DMP4025LSD ADVANCE INFORMATION 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max -40V 25m @ VGS = -10V 45m @ VGS = -4.5V Features and Benefits ID max (A) TA = +25C -7.6 -6.0 Description This MOSFET has been designed to minimize the on-state resistance Low RDS(on) – Minimizes conduction losses Fast switching speed – Minimizes switching losses Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) and yet maintain superior switching performance, making it ideal for Mechanical Data high efficiency power management applications. Applications Motor Control Backlighting DC-DC Converters Printer Equipment Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) SO-8 Top View Pin-Out Top View Device symbol Ordering Information (Notes 4 & 5) Notes: Part Number Compliance Case Packaging DMP4025LSD-13 DMP4025LSDQ-13 Standard Automotive SO-8 SO-8 2500 / Tape & Reel 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information P4025LD YY WW DMP4025LSD Document Number: DS35937 Rev: 2 - 2 = Manufacturer’s Marking P4025LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53) 1 of 8 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4025LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -40 Gate-Source Voltage VGSS 20 Continuous Drain Current VGS = -10V Pulsed Drain Current VGS = -10V (Notes 7 & 9) -7.6 TA = +70°C (Notes 7 & 9) -6.1 ID (Notes 6 & 9) (Notes 6 & 10) -5.8 -6.9 Units V A (Notes 8 & 9) IDM -28.0 Continuous Source Current (Body diode) (Notes 7 & 9) IS -3.0 Pulsed Source Current (Body diode) (Notes 8 & 9) ISM -28.0 Symbol Value 1.25 10 Unit 1.8 14.3 W mW/°C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 6 & 10) PD (Notes 7 & 9) Thermal Resistance, Junction to Ambient (Notes 6 & 9) (Notes 6 & 10) (Notes 7 & 9) Thermal Resistance, Junction to Lead (Notes 9 & 11) Operating and Storage Temperature Range Notes: RθJA 2.14 17.2 100 70 58 RθJL 51 TJ, TSTG -55 to +150 °C/W °C 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note (2), except the device is measured at t 10 sec. 8. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). DMP4025LSD Document Number: DS35937 Rev: 2 - 2 2 of 8 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4025LSD Thermal Characteristics DMP4025LSD Document Number: DS35937 Rev: 2 - 2 3 of 8 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -40 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -40V, VGS = 0V Gate-Source Leakage Test Condition IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) -0.8 -1.3 -1.8 V ID = -250 µA, VDS = VGS 18 25 30 45 ON CHARACTERISTICS Gate Threshold Voltage VGS = -10V, ID = -3A RDS (ON) Forward Transconductance (Notes 12 & 13) gfs 16.6 S VDS = -5V, ID = -3A Diode Forward Voltage (Note 12) VSD -0.7 -1.0 V IS = -1A, VGS = 0V Input Capacitance Ciss 1640 Output Capacitance Coss 179 pF Reverse Transfer Capacitance Crss 128 VDS = -20V, VGS = 0V f = 1MHz Gate Resistance Rg 6.43 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (Note 14) Qg 14.0 Total Gate Charge (Note 14) Qg 33.7 Gate-Source Charge (Note 14) Qgs 5.5 Static Drain-Source On-Resistance (Note 12) mΩ VGS = -4.5V, ID = -3A DYNAMIC CHARACTERISTICS (Note 13) Gate-Drain Charge (Note 14) Qgd 7.3 Turn-On Delay Time (Note 14) tD(on) 6.9 Turn-On Rise Time (Note 14) tr 14.7 Turn-Off Delay Time (Note 14) tD(off) 53.7 tf 30.9 Turn-Off Fall Time (Note 14) VGS = -4.5V nC ns VGS = -10V VDS = -20V ID = -3A VDD = -20V, VGS = -10V ID = -3A 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics 30 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) ADVANCE INFORMATION DMP4025LSD 20 15 10 5 0 VDS = -5V T A = 85°C T A = 25°C 20 TA = 150°C TA = 125°C TA = -55°C 15 10 5 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMP4025LSD Document Number: DS35937 Rev: 2 - 2 2 4 of 8 www.diodes.com 0 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 5 April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 30 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 1.7 VGS = -10V ID = -20A 1.5 1.3 VGS = -4.5V ID = -10A 1.1 0.9 0.7 0.5 -50 0.05 0.04 0.03 VGS = -4.5V ID = -10A 0.02 VGS = -10V ID = -20A 0.01 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 2.0 20 18 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMP4025LSD 1.5 ID = -1mA 1.0 ID = -250µA 0.5 16 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMP4025LSD Document Number: DS35937 Rev: 2 - 2 5 of 8 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4025LSD 10,000 -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss 1,000 Coss 100 Crss T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 1 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 40 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 10,000 VDS = -20V ID = -12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP4025LSD Document Number: DS35937 Rev: 2 - 2 40 6 of 8 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4025LSD Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 ADVANCE INFORMATION Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP4025LSD Document Number: DS35937 Rev: 2 - 2 7 of 8 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4025LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMP4025LSD Document Number: DS35937 Rev: 2 - 2 8 of 8 www.diodes.com April 2013 © Diodes Incorporated