AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and microwave frequencies Performance in 230 mil BeO package: • High Output Power: 27.5 dBm typical P1dB at 2.0 GHz 26.5 dBm typical P1dB at 4.0 GHz • High Gain at 1 dB Compression: 12.5 dB typical G1dB at 2.0 GHz 9.5 dB typical G1dB at 4.0 GHz • 35% Total Efficiency • Emitter Ballast Resistors Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self alignment techniques, and golf metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. Chip Outline Table 1. Absolute Maximum Ratings at Tc = +25°C Symbol Parameter Unit Max Rating VEBO Emitter-Base Voltage V 2.2 VCBO Collector-Base Voltage V 40 VCEO Collector-Emitter Voltage V 20 IC Collector Current mA 200 PT Power Dissipation[3] W 3 Junction Temperature 0C 200 Tstg Storage Temperature 0C -65 to 200 qjc Thermal Resistance 0C/W 40 Tj Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Maximum ratings are tested in 230 mil BeO packages. 3. T—CASE = 25 °C. Derate at 25 mW/°C for Tc > 80°C Table 2. Electrical Specifications [1,2] at Tc = +25°C Symbol Parameter and Test Condition |S21E|2 Insertion Power Gain; Vce = 16V, Ic = 110 mA f = 2.0 GHz f = 4.0 GHz dB P1dB Power Output @1dB Gain Compression Vce = 16V, Ic = 110 mA f = 2.0 GHz f = 4.0 GHz dBm 25.5 27.5 26.5 G1dB 1 dB Compressed Gain Vce = 16V, Ic = 110 mA f = 2.0 GHz f = 4.0 GHz dB 7.0 12.5 9.5 hT Total Efficiency[3] at 1 dB Gain Compression Vce = 16V, Ic = 110 mA f = 4.0 GHz % hFE ICBO IEBO Forward Current Transfer Ratio; Vce = 8V, Ic = 110 mA Collector Cutoff Current; VCB = 16 V Emitter Cutoff Current; VEB = 1V Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer. 2. RF performance is measured in 230 mil BeO packages. 3. ηT = (RF Output Power)/(RF Input Power + VCE x IC) Units uA uA Min. Typ. Max. 6.5 2.0 35.0 20 50 200 100 5.0 Typical Performance Curves at Tc = +25°C Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collector Current. VCE = 16 V. Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE = 16 V. Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110 mA, f = 4.0 GHz. Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA. Typical Scattering Parameters at Tc = +25°C VCE = 16 V, IC = 110 mA, ZO = 50 Ohm, Common Emitter S11 S21 S12 S22 Freq. GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. 0.1 .54 -124 28.2 25.71 135 -33.3 .022 42 .72 -51 0.5 .80 -178 17.6 7.57 78 -29.5 .034 18 .33 -119 1.0 .80 162 11.9 3.92 47 -28.6 .037 10 .33 -142 1.5 .80 147 8.6 2.70 21 -27.9 .040 12 .40 -156 2.0 .78 133 6.3 2.07 -4 -27.6 .042 1 .48 -169 2.5 .77 127 5.1 1.80 -24 -25.5 .053 -5 .58 -178 3.0 .73 116 3.8 1.56 -51 -25.0 .056 -20 .67 170 3.5 .66 106 2.9 1.40 -79 -25.8 .051 -28 .78 156 4.0 .60 99 2.2 1.28 -109 -27.2 .044 -49 .86 142 4.5 .55 98 1.4 1.18 -141 -31.2 .028 -70 .93 127 5.0 .54 99 0.6 1.07 -175 -40.9 .009 -144 .93 112 A model for this device is available in the DEVICE MODELS section. AT-64000 Chip Dimensions Notes : 1) The bottom of the die is Collector. 2) Die thickness is 5 to 6 mils. Part Number Ordering Information Part number Devices Per Tray AT-64000-GP4 100 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0274EN AV02-1929EN - May 15, 2009