APTGT600DU60 VCES = 600V IC = 600A* @ Tc = 80°C Dual common source Trench + Field Stop IGBT® Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 E C1 E C2 E1 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile G2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 700 * 600 * 800 ±20 2300 Tj = 150°C 1200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 E2 * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT600DU60 – Rev 0 G1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGT600DU60 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 600A Tj = 150°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A R G = 2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 600A R G = 2Ω Test Conditions Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 600A VGE = 0V trr Reverse Recovery Time IF = 600A VR = 300V Qrr Reverse Recovery Charge di/dt =5000A/µs 1.4 1.5 5.8 Typ 49 3.1 1.5 130 55 250 Max Unit 750 1.8 µA 6.5 800 V nA Max Unit V nF ns 60 145 60 320 ns 80 10.5 21 Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 600 1.5 1.4 125 220 27 Tj = 150°C 57 mJ Max 750 1000 Unit V µA A 1.9 V ns µC May, 2005 IRM Typ APT website – http://www.advancedpower.com 2-5 APTGT600DU60 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT600DU60 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.065 0.11 Unit °C/W V 175 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT600DU60 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT600DU60 Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1200 1200 1000 VGE=13V VGE =19V T J=125°C 800 800 T J=150°C IC (A) IC (A) T J = 150°C T J=25°C 1000 600 400 VGE=15V 600 VGE =9V 400 200 200 TJ=25°C 0 0 0 0.5 1 1.5 V CE (V) 2 0 2.5 40 TJ=25°C 30 E (mJ) IC (A) 800 T J=125°C 400 T J=25°C 25 Er 20 15 Eon 6 7 8 9 10 0 11 200 400 Switching Energy Losses vs Gate Resistance 800 1000 1200 Reverse Bias Safe Operating Area 70 1400 VCE = 300V VGE =15V IC = 600A T J = 150°C 1200 Eon 1000 40 IC (A) Eoff Eoff 20 600 IC (A) V GE (V) E (mJ) 3.5 0 5 30 3 Eoff 5 0 50 2.5 10 TJ=150°C 200 60 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 2Ω T J = 150°C 35 1000 600 1 Energy losses vs Collector Current Transfert Characteristics 1200 0.5 800 600 400 Eon 10 Er V GE=15V T J=150°C RG=2Ω 200 0 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 100 200 300 400 500 600 VCE (V) 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.05 0.7 0.04 0.5 0.03 IGBT May, 2005 0.06 0.3 0.02 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT600DU60 – Rev 0 Thermal Impedance (°C/W) 0.07 APTGT600DU60 Forward Characteristic of diode 1200 100 ZCS 80 V CE=300V D=50% RG =2Ω T J=150°C 1000 800 T c=85°C 60 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 ZVS 600 T J=125°C 400 40 Hard switching 20 T J=150°C TJ =25°C 200 0 0 0 200 400 600 IC (A) 800 0 1000 0.4 0.8 1.2 VF (V) 1.6 2 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.08 0.06 0.04 0.02 Diode 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT600DU60 – Rev 0 May, 2005 Rectangular Pulse Duration in Seconds