Intersil HCS190MS Radiation hardened synchronous 4-bit up/down counter Datasheet

HCS190MS
Radiation Hardened Synchronous
4-Bit Up/Down Counter
September 1995
Features
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Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm2/mg
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 1012 RAD (Si)/s
Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55oC to +125oC
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii ≤ 5µA at VOL, VOH
1
16 VCC
2
15 P0
Q0
3
14 CP
CE
4
13 RC
U/D
5
12 TC
Q2
6
11 PL
Q3
7
10 P2
GND
8
9 P3
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
Description
The Intersil HCS190MS is an asynchronously presettable BCD
Decade synchronous counter. Presetting the counter to the
number on the preset data inputs (P0 - P3) is accomplished by a
low on the parallel load input (PL). Counting occurs when (PL) is
high, Count Enable (CE) is low and the Up/Down (U/D) input is
either low for up-counting or high for down-counting. The counter
is incremented or decremented synchronously with the low-to-high
transition of the clock.
When an overflow or underflow of the counter occurs, the Terminal
Count output (TC), which is low during counting, goes high and
remains high for one clock cycle. This output can be used for lookahead carry in high speed cascading. The TC output also initiates
the Ripple Clock output (RC) which, normally high, goes low and
remains low for the low-level portion of the clock pulse. These
counter can be cascaded using the Ripple Carry output.
If the decade counter is preset to an illegal state or assumes an
illegal state when power is applied, it will return to the normal
sequence in one or two counts.
The HCS190MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
P1
Q1
16
VCC
2
15
P0
3
14
CP
CE
4
13
RC
U/D
5
12
TC
Q2
6
11
PL
Q3
7
10
P2
GND
8
9
P3
P1
Q1
Q0
1
TRUTH TABLE
INPUTS
OUTPUT
FUNCTION
PL
CE
U/D
H
L
L
Count Up
H
L
H
Count Down
L
X
X
X
Preset
H
H
X
X
No Change
H = High Voltage Level
L = Low Voltage Level
CP
X = Immaterial
=Positive Transistion
Ordering Information
PART NUMBER
TEMPERATURE RANGE
HCS190DMSR
-55oC
HCS190KMSR
-55oC
SCREENING LEVEL
PACKAGE
to
+125oC
Intersil Class S Equivalent
16 Lead SBDIP
to
+125oC
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS190D/Sample
+25oC
Sample
16 Lead SBDIP
HCS190K/Sample
+25oC
Sample
16 Lead Ceramic Flatpack
HCS190HMSR
+25oC
Die
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
260
Spec Number
File Number
518836
2251.2
Specifications HCS190MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltage Reference to the VSS Terminal)
Thermal Resistance
θJA
θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73oC/W
24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W
29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current
(Source)
Output Current
(Sink)
Output Voltage High
Output Voltage Low
Input Leakage
Current
Noise Immunity
Functional Test
SYMBOL
ICC
IOH
IOL
VOH
VOL
IIN
FN
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
40
µA
2, 3
+125oC, -55oC
-
750
µA
1
+25oC
-4.8
-
mA
2, 3
+125oC, -55oC
-4.0
-
mA
1
+25oC
4.8
-
mA
2, 3
+125oC, -55oC
4.0
-
mA
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIN = VCC or
GND
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
V
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V,
VIH = 3.15V,
VIL = 1.35V, (Note 3)
LIMITS
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number
261
518836
Specifications HCS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
Pn to Qn
TPLH
TPHL
CP to Qn
TPLH
TPHL
CP to RC
TPLH
TPHL
CP to TC
TPLH
TPHL
U/D to RC
TPLH
TPHL
U/D to TC
TPLH
TPHL
CE to RC
TPLH
TPHL
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
2
30
ns
10, 11
+125oC, -55oC
2
35
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
PL to Qn
TPHL
GROUP
A SUBGROUPS
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
LIMITS
o
9
+25 C
2
35
ns
10, 11
+125oC, -55oC
2
41
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
o
9
+25 C
2
28
ns
10, 11
+125oC, -55oC
2
33
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
o
9
+25 C
2
33
ns
10, 11
+125oC, -55oC
2
38
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
o
9
+25 C
2
31
ns
10, 11
+125oC, -55oC
2
37
ns
9
+25oC
2
28
ns
10, 11
+125oC, -55oC
2
34
ns
9
+25oC
2
25
ns
10, 11
+125oC, -55oC
2
28
ns
9
+25oC
2
24
ns
10, 11
+125oC, -55oC
2
26
ns
9
+25oC
2
41
ns
10, 11
+125oC, -55oC
2
49
ns
9
+25oC
2
40
ns
10, 11
+125oC, -55oC
2
47
ns
9
+25oC
2
37
ns
10, 11
+125oC, -55oC
2
40
ns
9
+25oC
2
34
ns
10, 11
+125oC, -55oC
2
40
ns
9
+25oC
2
40
ns
10, 11
+125oC, -55oC
2
43
ns
9
+25oC
2
40
ns
10, 11
+125oC, -55oC
2
36
ns
9
+25oC
2
24
ns
10, 11
+125oC, -55oC
2
25
ns
9
+25oC
2
26
ns
10, 11
+125oC, -55oC
2
26
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
Spec Number
262
518836
Specifications HCS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
CIN
Setup Time
TSU
Pn to PL
TSU
CE to CP
TSU
U/D to CP
Hold Time
TH
Pn to PL
TH
CE to CP
TH
U/D to CP
Pulse Width Time
TW
CP
TW
PL
Recovery Time
TREC
Maximum
Frequency
FMAX
Output Transition
Time
TTHL
TTLH
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
36
pF
1
+125oC, -55oC
-
62
pF
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25oC
-
10
pF
1
+125oC, -55oC
-
10
pF
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
12
-
ns
1
+125oC, -55oC
18
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
12
-
ns
1
+125oC, -55oC
18
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
18
-
ns
1
+125oC, -55oC
27
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
2
-
ns
1
+125oC, -55oC
2
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
2
-
ns
1
+125oC, -55oC
2
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
0
-
ns
1
+125oC, -55oC
0
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
16
-
ns
1
+125oC, -55oC
24
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
20
-
ns
1
+125oC, -55oC
30
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
12
-
ns
1
+125oC, -55oC
18
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
30
-
ns
1
+125oC, -55oC
20
-
ns
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25oC
1
15
ns
1
+125oC, -55oC
1
22
ns
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
200K RAD
LIMITS
TEMPERATURE
MIN
MAX
UNITS
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
mA
-4.0
-
mA
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25oC
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0
+25oC
Spec Number
263
518836
Specifications HCS190MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
Output Voltage High
Output Voltage Low
Input Leakage Current
Noise Immunity
Functional Test
(NOTE 1)
CONDITIONS
SYMBOL
VOH
VOL
IIN
TEMPERATURE
MIN
MAX
UNITS
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
+25oC
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
+25oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
+25oC
-
0.1
V
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±5
µA
o
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
+25 C
-
-
V
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
35
ns
PL to Qn
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
41
ns
Pn to Qn
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
33
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
38
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
37
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
34
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
28
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
26
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
49
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
47
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
40
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
40
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
43
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
36
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
25
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
26
ns
Propagation Delay
CP to Qn
CP to RC
CP to TC
U/D to RC
U/D to TC
CE to RC
FN
200K RAD
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
PARAMETER
Spec Number
264
518836
Specifications HCS190MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 7, 9
Group A (Note 1)
Group B
Group D
READ AND RECORD
ICC, IOL/H, IOZL/H
Subgroups 1, 2, 3, 9, 10, 11
NOTE:
1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 7, 9
Table 4 (Note 1)
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% go/no-go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
1, 4, 5, 8, 9, 10,
11, 14, 15
-
16
-
-
8
-
1, 4, 5, 9, 10, 11, 14,
15, 16
-
-
1, 4, 5, 8, 9, 10, 15
2, 3, 6, 7, 12, 13
11, 16
14
-
OPEN
STATIC I BURN-IN (Note 1)
2, 3, 6, 7, 12, 13
STATIC II BURN-IN (Note 1)
2, 3, 6, 7, 12, 13
DYNAMIC BURN-IN (Note 2)
NOTES:
1. Each pin except VCC and GND will have a series resistor of 10K ± 5%.
2. Each pin except VCC and GND will have a series resistor of 1K ± 5%.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
2, 3, 6, 7, 12, 13
8
1, 4, 5, 9, 10, 11, 14, 15, 16
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E,
Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
265
518836
HCS190MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
100% Interim Electrical Test 2 (T2)
Sample - Wire Bond Pull Monitor, Method 2011
100% Delta Calculation (T0-T2)
Sample - Die Shear Monitor, Method 2019 or 2027
100% PDA 1, Method 5004 (Notes 1and 2)
100% Internal Visual Inspection, Method 2010, Condition A
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Delta Calculation (T0-T1)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Interim Electrical Test 3 (T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% PIND, Method 2020, Condition A
100% Final Electrical Test
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Serialization
100% Radiographic, Method 2012 (Note 3)
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
266
518836
HCS190MS
Propagation Delay Timing Diagram
Propagation Delay Load Circuit
VIH
TEST
POINT
DUT
INPUT
VS
VSS
TPLH
CL
TPHL
RL
CL = 50pF
RL = 500Ω
VOH
VS
OUTPUT
VOL
Transition Timing Diagram
TTLH
VOH
TTHL
80%
20%
VOL
80%
20%
OUTPUT
VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
Pulse Width, Setup, Hold Timing Diagram Propagation Delay Load Circuit
Positive Edge Trigger
TEST
POINT
DUT
TW
INPUT
VIH
VS
VIL
CL
TH
TSU
RL
CL = 50pF
RL = 500Ω
TW
EN INPUT
VIH
VS
VIL
TH = Hold Time
TSU = Setup Time
TW = Pulse Width
AC VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
Spec Number
267
518836
HCS190MS
Die Characteristics
DIE DIMENSIONS:
104 x 86 (mils)
2.65 x 2.19 (mm)
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105 A/cm2
BOND PAD SIZE:
4 x 4 (mils)
100 x 100µm
Metallization Mask Layout
(16) VCC
(1) P1
(2) Q1
HCS190MS
(15) P0
Q0 (3)
(14) CP
CE (4)
(13) RC
U/D (5)
(12) TC
Q2 (6)
(11) PL
P2 (10)
P3 (9)
GND (8)
Q3 (7)
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCS190 is TA14344A.
Spec Number
268
518836