MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0082 grams (approximate) C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 600 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT4401 Document number: DS30039 Rev. 13 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated MMBT4401 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 V V V nA nA hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V Ccb Ceb hie hre hfe hoe ⎯ ⎯ 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 250 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: ⎯ Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 4. Short duration pulse test used to minimize self-heating effect. 400 1 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 0.1 DC Pw = 100ms 0.01 TA = 25°C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board RθJA = 417° C/W 50 0 Pw = 10ms 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 25 MMBT4401 Document number: DS30039 Rev. 13 - 2 0.001 0.1 2 of 4 www.diodes.com 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage December 2008 © Diodes Incorporated MMBT4401 0.5 1,000 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 hFE, DC CURRENT GAIN T A = 125°C 100 T A = -25°C T A = +25°C 10 0.4 TA = 25°C 0.3 T A = 150°C 0.2 0.1 TA = -50°C VCE = 1.0V 1 0.1 0 1 VCE = 5V 0.9 T A = -50°C 0.8 30 0.7 TA = 25°C 0.6 0.5 TA = 150°C 20 Cibo 10 5 Cobo 0.4 0.3 0.2 0.1 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 50 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current 100 1.0 CAPACITANCE (pF) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain Bandwidth Product vs. Collector Current MMBT4401 Document number: DS30039 Rev. 13 - 2 3 of 4 www.diodes.com 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 1 IB, BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region 0.01 100 December 2008 © Diodes Incorporated MMBT4401 Ordering Information (Note 5) Part Number MMBT4401-7-F MMBT4401-13-F Notes: Case SOT-23 SOT-23 Packaging 3000/Tape & Reel 10,000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 Code J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N Mar 3 2003 P K2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM K2X 2004 2005 R S Apr 4 May 5 2006 T 2007 U Jun 6 Jul 7 2008 V 2009 W Aug 8 2010 X 2011 2012 Y Z Sep 9 Oct O 2013 A Nov N 2014 B 2015 C Dec D Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT4401 Document number: DS30039 Rev. 13 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated