MMBT2222FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES · · · Epitaxial Planar Die Construction SOT-523 A Complementary PNP Type Available (MMBT2907FW) L Ideal for Medium Power Amplification and Switching 3 B S Top View 1 2 COLLECTOR 3 V G 3 1 C BASE 1 2 H D J K 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBT2222FW Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 75 Vdc Emitter – Base Voltage VEBO 6 Vdc IC 600 mAdc Collector Current — Continuous Dim Min Max A 1.500 1.700 B 0.780 0.820 C 0.800 0.820 D 0.280 0.320 G 0.900 1.100 H 0.000 0.100 0.200 J 0.100 K 0.350 0.410 L 0.490 0.510 S 1.500 1.700 V 0.280 0.320 All Dimension in mm THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 150 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222FW = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX — 10 nAdc Collector Cutoff Current (V CB = 60 Vdc, IE = 0) ICBO — 0.01 µAdc — 10 IEBO — 100 nAdc IBL — 20 nAdc OFF CHARACTERISTICS (V CB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (V EB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 MMBT2222FW NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 75 — — — 100 40 300 — — 0.3 — 1.0 0.6 1.2 — 2.0 300 — — — 8.0 — 25 2.0 0.25 8.0 1.25 — — 8.0 4.0 50 75 300 375 5.0 25 35 200 — 150 — 4.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) hFE (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) — VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MHz pF pF kΩ X 10– 4 — mmhos ps NF dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time v ((VCC = 30 Vdc,, VBE(off) = – 0.5 Vdc,, IC = 150 mAdc, IB1 = 15 mAdc) td — 10 tr — 25 ((VCC = 30 Vdc,, IC = 150 mAdc,, IB1 = IB2 = 15 mAdc) ts — 225 tf — 60 v ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 MMBT2222FW NPN Silicon Elektronische Bauelemente General Purpose Transistor SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 0 –2 V 200 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 200 0 1 kΩ CS* < 10 pF < 2 ns 1k –14 V < 20 ns CS* < 10 pF 1N914 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC Current Gain 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 5.0 10 300 500 700 1.0 k Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 MMBT2222FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts – 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 5.0 7.0 10 20 Figure 5. Turn – On Time IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 300 500 6.0 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 500 20 Ceb Capacitance (pF) 200 10 8.0 10 7.0 5.0 Ccb 3.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) Figure 9. Capacitances http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 30 50 70 100 I C, Collector Current (mA) Figure 6. Turn – Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, Time (ns) t, Time (ns) 100 70 50 20 30 50 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 10. Current–Gain Bandwidth Product Any changing of specification will not be informed individual Page 4 of 5 MMBT2222FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 +0.5 TJ = 25°C 0 0.8 Coefficient (mV/ °C) V, Voltage (V) VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 RqVB for VBE – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 5 of 5