BVDSS = 800 V RDS(on) typ = 13 Ω HFD1N80 / HFU1N80 ID = 1.0 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design HFD1N80 Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V 100% Avalanche Tested Symbol 3 HFU1N80 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Absolute Maximum Ratings 3 S TC=25℃ unless otherwise specified Parameter Value Units 800 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 1.0 A Drain Current – Continuous (TC = 100℃) 0.63 A IDM Drain Current – Pulsed 4.0 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 1.0 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25℃) * 2.5 W Power Dissipation (TC = 25℃) - Derate above 25℃ 45 W 0.36 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 2.78 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 April 2006 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A -- 13 16 Ω VGS = 0 V, ID = 250 ㎂ 800 -- -- V ID = 250 ㎂, Referenced to25℃ -- 1.0 -- V/℃ VDS = 800 V, VGS = 0 V -- -- 1 ㎂ VDS = 640 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 150 195 ㎊ -- 20 26 ㎊ -- 5.5 7.2 ㎊ -- 12 30 ㎱ -- 40 90 ㎱ -- 25 60 ㎱ -- 45 100 ㎱ -- 7.5 10.0 nC -- 1.2 -- nC -- 4.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 400 V, ID = 1.0 A, RG = 25 Ω (Note 4,5) VDS = 640 V, ID = 1.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 1.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 4.0 VSD Source-Drain Diode Forward Voltage IS = 1.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 310 -- ㎱ Qrr Reverse Recovery Charge IS = 1.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.8 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 Electrical Characteristics TC=25 °C HFD1N80 / HFU1N80 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 35 30 IDR, Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 40 VGS = 10V VGS = 20V 25 20 15 ※ Note : TJ = 25 ℃ 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID , Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss Capacitances [pF] 200 150 Coss 100 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 VGS, Gate-Source Voltage [V] 250 VDS = 160V 10 VDS = 400V 8 VDS = 640V 6 4 2 ※ Notes : ID = 1.0 A 0 -1 10 0 0 10 1 10 0 1 2 3 4 5 6 7 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 8 ◎ SEMIHOW REV.A0,April 2006 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFD1N80 / HFU1N80 Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 0.5 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [ C] 150 200 1.0 1 10 Operation in This Area is Limited by R DS(on) 100 µs 0.8 0 ID, Drain Current [A] 1 ms 10 10 ms DC -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 0.6 0.4 0.2 0.0 25 -2 3 10 10 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Zθ JC(t), Thermal Response ID, Drain Current [A] 100 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 10 50 TJ, Junction Temperature [oC] o Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0 10 0.2 ※ Notes : 1. Zθ JC(t) = 2.78 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 PDM 0.02 0.01 -1 10 t1 single pulse -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 Package Dimension TO-252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2.3typ ◎ SEMIHOW REV.A0,April 2006 HFD1N80 / HFU1N80 Package Dimension TO-251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ ◎ SEMIHOW REV.A0,April 2006