SemiHow HFU1N80 800v n-channel mosfet Datasheet

BVDSS = 800 V
RDS(on) typ = 13 Ω
HFD1N80 / HFU1N80
ID = 1.0 A
800V N-Channel MOSFET
D-PAK
I-PAK
2
FEATURES
1
1
2
3
 Originative New Design
HFD1N80
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
D
 Unrivalled Gate Charge : 7.5 nC (Typ.)
 Extended Safe Operating Area
G
 Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Symbol
3
HFU1N80
1.Gate 2. Drain 3. Source
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
Absolute Maximum Ratings
3
S
TC=25℃ unless otherwise specified
Parameter
Value
Units
800
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
1.0
A
Drain Current
– Continuous (TC = 100℃)
0.63
A
IDM
Drain Current
– Pulsed
4.0
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
mJ
IAR
Avalanche Current
(Note 1)
1.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TA = 25℃) *
2.5
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
45
W
0.36
W/℃
-55 to +150
℃
300
℃
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Junction-to-Case
--
2.78
RθJA
Junction-to-Ambient*
--
50
RθJA
Junction-to-Ambient
--
110
Units
℃/W
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
April 2006
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A
--
13
16
Ω
VGS = 0 V, ID = 250 ㎂
800
--
--
V
ID = 250 ㎂, Referenced to25℃
--
1.0
--
V/℃
VDS = 800 V, VGS = 0 V
--
--
1
㎂
VDS = 640 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
150
195
㎊
--
20
26
㎊
--
5.5
7.2
㎊
--
12
30
㎱
--
40
90
㎱
--
25
60
㎱
--
45
100
㎱
--
7.5
10.0
nC
--
1.2
--
nC
--
4.5
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 1.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 640 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
1.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
4.0
VSD
Source-Drain Diode Forward Voltage
IS = 1.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
310
--
㎱
Qrr
Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
0.8
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
Electrical Characteristics TC=25 °C
HFD1N80 / HFU1N80
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
35
30
IDR, Reverse Drain Current [A]
RDS(on) , [Ω]
Drain-Source On-Resistance
40
VGS = 10V
VGS = 20V
25
20
15
※ Note : TJ = 25 ℃
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID , Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss
Capacitances [pF]
200
150
Coss
100
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
50
VGS, Gate-Source Voltage [V]
250
VDS = 160V
10
VDS = 400V
8
VDS = 640V
6
4
2
※ Notes : ID = 1.0 A
0
-1
10
0
0
10
1
10
0
1
2
3
4
5
6
7
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
8
◎ SEMIHOW REV.A0,April 2006
(continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFD1N80 / HFU1N80
Typical Characteristics
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 0.5 A
0.5
0.0
-100
200
-50
0
TJ, Junction Temperature [ C]
150
200
1.0
1
10
Operation in This Area
is Limited by R DS(on)
100 µs
0.8
0
ID, Drain Current [A]
1 ms
10
10 ms
DC
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
1
2
10
0.6
0.4
0.2
0.0
25
-2
3
10
10
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
ID, Drain Current [A]
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
10
50
TJ, Junction Temperature [oC]
o
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0
10
0.2
※ Notes :
1. Zθ JC(t) = 2.78 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
0.1
0.05
PDM
0.02
0.01
-1
10
t1
single pulse
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
Package Dimension
TO-252
2.3±0.1
6.6±0.2
1.2±0.3
9.7+0.5
-0.3
2.7±0.3
0.5±0.05
5.6±0.2
1±0.2
5.35±0.15
1.2±0.3
0.05+0.1
-0.05
0.8±0.2
0.6±0.2
0.5+0.1
-0.05
2.3typ
2.3typ
◎ SEMIHOW REV.A0,April 2006
HFD1N80 / HFU1N80
Package Dimension
TO-251
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
7.5±0.3
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
◎ SEMIHOW REV.A0,April 2006
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