MBR7Hxx, MBRF7Hxx, MBRB7Hxx www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved HighTemperature Performance FEATURES ITO-220AC TO-220AC Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 2 2 1 1 MBR7Hxx • • • • • • • • MBRF7Hxx PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB K 2 TYPICAL APPLICATIONS 1 MBRB7Hxx PIN 2 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. K PIN 1 HEATSINK PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 7.5 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 150 A VF 0.55 V, 0.61 V IR 50 μA TJ max. 175 °C Package TO-220AC, ITO-220AC, TO-263AB Diode variations Single Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Working peak reverse voltage VRWM 35 45 50 60 Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current (fig.1) IF(AV) 7.5 A Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L =10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 20 10 Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 kW Operating junction and storage temperature range Voltage rate of change (rated VR) Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Revision: 13-Aug-13 UNIT V A mJ VC 25 TJ, TSTG - 65 to + 175 °C dV/dt 10 000 V/μs VAC 1500 V kV Document Number: 88796 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR7Hxx, MBRF7Hxx, MBRB7Hxx www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage Maximum reverse current VF (1) IR (2) MBR7H35 MBR7H45 TEST CONDITIONS TYP. MAX. MBR7H50 MBR7H60 UNIT TYP. MAX. IF = 7.5 A TC = 25 °C - 0.63 - 0.73 IF = 7.5 A TC = 125 °C 0.50 0.55 0.58 0.61 IF = 15 A TC = 25 °C - 0.75 - 0.87 IF = 15 A TC = 125 °C 0.61 0.66 0.68 0.72 TC = 25 °C - 50 - 50 μA TC = 125 °C 3.0 10 2.0 10 mA Rated VR V Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL MBR MBRF MBRB UNIT RJC 3.0 5.0 3.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR7H45-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF7H45-E3/45 1.94 45 50/tube Tube TO-263AB MBRB7H45-E3/45 1.33 45 50/tube Tube TO-263AB MBRB7H45-E3/81 1.33 81 800/reel Tape and reel TO-220AC MBR7H45HE3/45 (1) 1.80 45 50/tube Tube ITO-220AC MBRF7H45HE3/45 1) 1.94 45 50/tube Tube TO-263AB MBRB7H45HE3/45 (1) 1.33 45 50/tube Tube TO-263AB MBRB7H45HE3/81 (1) 1.33 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 13-Aug-13 Document Number: 88796 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR7Hxx, MBRF7Hxx, MBRB7Hxx www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 10 MBR, MBRB 8 6 MBRF 4 2 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 MBR7H35, MBR7H45 MBR7H50, MBR7H60 0.001 TJ = 25 °C 0.0001 0 0 25 50 75 100 125 150 0 175 40 60 80 100 Fig. 4 - Typical Reverse Characteristics Per Leg Fig. 1 - Forward Current Derating Curve 175 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 Junction Capacitance (pF) Peak Forward Surge Current (A) 20 Percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 125 100 75 50 100 10 MBR7H35, MBR7H45 MBR7H50, MBR7H60 1 0.1 25 1 10 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg Fig. 5 - Typical Junction Capacitance Per Leg 10 10 TJ = 150 °C 1 TJ = 25 °C TJ = 125 °C 0.1 MBR7H35, MBR7H45 MBR7H50, MBR7H60 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Leg Fig. 6 - Typical Transient Thermal Impedance Per Leg Revision: 13-Aug-13 Document Number: 88796 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR7Hxx, MBRF7Hxx, MBRB7Hxx www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC ITO-220AC 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.671 (17.04) 0.651 (16.54) 0.600 (15.24) 0.580 (14.73) PIN 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) Revision: 13-Aug-13 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 7° REF. 0.191 (4.85) 0.171 (4.35) CASE 0.037 (0.94) 0.027 (0.68) 7° REF. 2 1 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 1.148 (29.16) 1.118 (28.40) 2 7° REF. 0.076 (1.93) REF. 45° REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 88796 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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