Panasonic MTM761230LBF Silicon p-channel mosfet for switching Datasheet

Doc No. TT4-EA-10073
Revision. 2
Product Standards
MOS FET
MTM761230LBF
MTM761230LBF
Silicon P-channel MOSFET
Unit : mm
For Switching
2.0
0.2
0.13
6
5
4
1
2
3
 Features
1.7
2.1
 Low drain-source On-state Resistance : RDS(on) typ. = 36 m  (VGS = -4 V)
 Low drive voltage : 2.5 V drive
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
0.7
 Marking Symbol : 9C
(0.65)(0.65)
1.3
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Drain
2. Drain
3. Gate
 Absolute Maximum Ratings Ta = 25 C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulsed) *1
Total Power Dissipation *2
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
Note)
Symbol
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
Rating
-20
10
-3
-16
700
150
-40 to +85
-55 to +150
Unit
V
V
A
A
mW
C
C
C
4. Source
5. Drain
6. Drain
WSMini6-F1-B
SC-113DA
―
Panasonic
JEITA
Code
Internal Connection
(D)
6
(D)
5
(S)
4
1
(D)
2
(D)
3
(G)
*1 Pulse width  10 s, Duty cycle  1 %
*2 Measuring on ceramic board at 40 mm  38 mm  0.1 mm
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
Pin Name
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
Page 1 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No. TT4-EA-10073
Revision. 2
Product Standards
MOS FET
MTM761230LBF
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Forward transfer admittance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time *2
Turn-off Delay Time *2
Note)
VDSS
IDSS
IGSS
Vth
*1
Conditions
ID = -1 mA, VGS = 0 V
VDS = -20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
ID = -1 mA, VDS = -10 V
RDS(on)1 ID = -1 A, VGS = -4 V
RDS(on)2 ID = -0.5 A, VGS = -2.5 V
ID = -1 A, VDS = -10 V, f = 1 kHz
|Yfs|
Ciss
VDS = -10 V, VGS = 0 V
Coss
f = 1 MHz
Crss
VDD = -10 V, VGS = 0 to -4 V
ton
ID = -1 A
VDD = -10 V, VGS = -4 to 0 V
toff
ID = -1 A
Min
Typ
Max
-0.85
36
42
-1
10
-1.3
55
70
Unit
-20
-0.4
3.5
V
A
A
V
m
S
1 000
100
100
pF
30
ns
250
ns
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test : Pulse width  300 s, Duty cycle  2 %
*2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
Page 2 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No. TT4-EA-10073
Revision. 2
Product Standards
MOS FET
MTM761230LBF
*2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
VDD = -10 V
ID = -1 A
RL = 10 
0V
-4 V
PW = 10 s
D.C.  1 %
ton
toff
Page 3 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No. TT4-EA-10073
Revision. 2
Product Standards
MOS FET
MTM761230LBF
Technical Data ( reference )
ID - VDS
ID - VGS
-3
-0.01
-4 V
-2
-2 V
-1.5
-1.5 V
-1
-0.5
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.006
25 ℃
-0.004
40 ℃
-
-0.002
VGS = -1 V
0
Ta = 85 ℃
-0.008
-2.5 V
Drain current ID (A)
Drain Current ID (A)
-2.5
-0.6
0
0
-0.2
Drain-source Voltage VDS (V)
-0.4
VDS - VGS
-1
-1.2
RDS(on) - ID
100
Drain-source On-state Resistance
RDS(on) (m)
Drain-source Voltage VDS (V)
-0.8
Gate-source voltage VGS (V)
-0.5
-0.4
-0.3
-0.2
-1 A
ID = -2 A
-0.1
-0.5 A
0
0
-1
-2
-3
-4
-5
-6
VGS = -2.5 V
-4 V
10
-0.1
-1
Drain Current ID (A)
Gate-source Voltage VGS (V)
Capacitance - VDS
Dynamic Input/Output Characteristics
10000
-10
1000
Ciss
100
10
-0.1
Gate-source Voltage VGS (V)
Capacitance C (pF)
-0.6
Coss
Crss
-8
VDD = -10 V
-6
-4
-2
0
-1
-10
Drain-source voltage VDS (V)
-100
0
5
10
15
20
25
30
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No. TT4-EA-10073
Revisio n. 2
Product Standards
MOS FET
MTM761230LBF
Technical Data ( reference )
Vth - Ta
Gate-source Threshold Voltage Vth (V)
-1
RDS(on) - Ta
80
Drain-source On-resistance
RDS(on) (mΩ)
70
-0.5
VGS = -2.5 V
60
50
40
-4 V
30
20
10
0
0
-50
0
50
100
-50
150
0
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
Total Power Dissipation PD (W)
1
Mounted on ceramic board
(40 mm  38 mm  0.1 mm)
0.8
0.6
0.4
Non-heat sink
0.2
0
0
50
100
150
Temperature Ta (C)
Safe Operating Area
Rth - tsw
-100
IDp = -16 A
Drain Current ID (A)
Thermal resistance Rth (C/W)
1000
100
-10
1 ms
-1
10 ms
-0.1
-0.01
100 ms
Operation in this area
is limited by RDS(on)
1s
Ta = 25 C,
Glass epoxy board (25.4  25.4  0.8 mm)
coated with copper foil,
DC
2
10
0.1
1
10
Pulse Width tsw (s)
100
1000
-0.001
-0.01
which has more than 300 mm .
-0.1
-1
-10
-100
Drain-source voltage VDS (V)
Page 5 of 6
Established : 2007 -11-07
Revised
: 2013 -06-18
Doc No. TT4-EA-10073
Revision. 2
Product Standards
MOS FET
MTM761230LBF
WSMini6-F1-B
Unit : mm
2.0±0.1
+0.05
0.13-0.03
5
4
1
2
3
(0.2)
(0.65) (0.65)
(5°)
1.7±0.1
6
2.1±0.1
+0.05
0.20-0.02
1.3±0.1
0 to 0.1
0.7±0.1
(0.15)
(5°)
 Land Pattern (Reference) (Unit : mm)
0.6
2.0
0.65 0.65
0.45
Page 6 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
Similar pages