Doc No. TT4-EA-10073 Revision. 2 Product Standards MOS FET MTM761230LBF MTM761230LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 Features 1.7 2.1 Low drain-source On-state Resistance : RDS(on) typ. = 36 m (VGS = -4 V) Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 0.7 Marking Symbol : 9C (0.65)(0.65) 1.3 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Drain 2. Drain 3. Gate Absolute Maximum Ratings Ta = 25 C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulsed) *1 Total Power Dissipation *2 Channel Temperature Operating Ambient Temperature Storage Temperature Range Note) Symbol VDS VGS ID IDp PD Tch Topr Tstg Rating -20 10 -3 -16 700 150 -40 to +85 -55 to +150 Unit V V A A mW C C C 4. Source 5. Drain 6. Drain WSMini6-F1-B SC-113DA ― Panasonic JEITA Code Internal Connection (D) 6 (D) 5 (S) 4 1 (D) 2 (D) 3 (G) *1 Pulse width 10 s, Duty cycle 1 % *2 Measuring on ceramic board at 40 mm 38 mm 0.1 mm Absolute maximum rating PD Non-heat sink shall be made 150 mW. Pin Name 1. Drain 2. Drain 3. Gate 4. Source 5. Drain 6. Drain Page 1 of 6 Established : 2007-11-07 Revised : 2013-06-18 Doc No. TT4-EA-10073 Revision. 2 Product Standards MOS FET MTM761230LBF Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Forward transfer admittance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time *2 Turn-off Delay Time *2 Note) VDSS IDSS IGSS Vth *1 Conditions ID = -1 mA, VGS = 0 V VDS = -20 V, VGS = 0 V VGS = 8 V, VDS = 0 V ID = -1 mA, VDS = -10 V RDS(on)1 ID = -1 A, VGS = -4 V RDS(on)2 ID = -0.5 A, VGS = -2.5 V ID = -1 A, VDS = -10 V, f = 1 kHz |Yfs| Ciss VDS = -10 V, VGS = 0 V Coss f = 1 MHz Crss VDD = -10 V, VGS = 0 to -4 V ton ID = -1 A VDD = -10 V, VGS = -4 to 0 V toff ID = -1 A Min Typ Max -0.85 36 42 -1 10 -1.3 55 70 Unit -20 -0.4 3.5 V A A V m S 1 000 100 100 pF 30 ns 250 ns Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Pulse test : Pulse width 300 s, Duty cycle 2 % *2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time Page 2 of 6 Established : 2007-11-07 Revised : 2013-06-18 Doc No. TT4-EA-10073 Revision. 2 Product Standards MOS FET MTM761230LBF *2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time VDD = -10 V ID = -1 A RL = 10 0V -4 V PW = 10 s D.C. 1 % ton toff Page 3 of 6 Established : 2007-11-07 Revised : 2013-06-18 Doc No. TT4-EA-10073 Revision. 2 Product Standards MOS FET MTM761230LBF Technical Data ( reference ) ID - VDS ID - VGS -3 -0.01 -4 V -2 -2 V -1.5 -1.5 V -1 -0.5 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.006 25 ℃ -0.004 40 ℃ - -0.002 VGS = -1 V 0 Ta = 85 ℃ -0.008 -2.5 V Drain current ID (A) Drain Current ID (A) -2.5 -0.6 0 0 -0.2 Drain-source Voltage VDS (V) -0.4 VDS - VGS -1 -1.2 RDS(on) - ID 100 Drain-source On-state Resistance RDS(on) (m) Drain-source Voltage VDS (V) -0.8 Gate-source voltage VGS (V) -0.5 -0.4 -0.3 -0.2 -1 A ID = -2 A -0.1 -0.5 A 0 0 -1 -2 -3 -4 -5 -6 VGS = -2.5 V -4 V 10 -0.1 -1 Drain Current ID (A) Gate-source Voltage VGS (V) Capacitance - VDS Dynamic Input/Output Characteristics 10000 -10 1000 Ciss 100 10 -0.1 Gate-source Voltage VGS (V) Capacitance C (pF) -0.6 Coss Crss -8 VDD = -10 V -6 -4 -2 0 -1 -10 Drain-source voltage VDS (V) -100 0 5 10 15 20 25 30 Total Gate Charge Qg (nC) Page 4 of 6 Established : 2007-11-07 Revised : 2013-06-18 Doc No. TT4-EA-10073 Revisio n. 2 Product Standards MOS FET MTM761230LBF Technical Data ( reference ) Vth - Ta Gate-source Threshold Voltage Vth (V) -1 RDS(on) - Ta 80 Drain-source On-resistance RDS(on) (mΩ) 70 -0.5 VGS = -2.5 V 60 50 40 -4 V 30 20 10 0 0 -50 0 50 100 -50 150 0 50 100 150 Temperature (℃) Temperature (℃) PD - Ta Total Power Dissipation PD (W) 1 Mounted on ceramic board (40 mm 38 mm 0.1 mm) 0.8 0.6 0.4 Non-heat sink 0.2 0 0 50 100 150 Temperature Ta (C) Safe Operating Area Rth - tsw -100 IDp = -16 A Drain Current ID (A) Thermal resistance Rth (C/W) 1000 100 -10 1 ms -1 10 ms -0.1 -0.01 100 ms Operation in this area is limited by RDS(on) 1s Ta = 25 C, Glass epoxy board (25.4 25.4 0.8 mm) coated with copper foil, DC 2 10 0.1 1 10 Pulse Width tsw (s) 100 1000 -0.001 -0.01 which has more than 300 mm . -0.1 -1 -10 -100 Drain-source voltage VDS (V) Page 5 of 6 Established : 2007 -11-07 Revised : 2013 -06-18 Doc No. TT4-EA-10073 Revision. 2 Product Standards MOS FET MTM761230LBF WSMini6-F1-B Unit : mm 2.0±0.1 +0.05 0.13-0.03 5 4 1 2 3 (0.2) (0.65) (0.65) (5°) 1.7±0.1 6 2.1±0.1 +0.05 0.20-0.02 1.3±0.1 0 to 0.1 0.7±0.1 (0.15) (5°) Land Pattern (Reference) (Unit : mm) 0.6 2.0 0.65 0.65 0.45 Page 6 of 6 Established : 2007-11-07 Revised : 2013-06-18 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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