QFET ® FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. • • • • • • -9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability • RoHS Compliant S ! D ● ● G! ▶ ▲ G S ● I-PAK D-PAK FQD Series FQU Series G D S ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 / FQU11P06 -60 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * dv/dt PD - Pulsed TL -9.4 A -5.95 A -37.6 A ± 30 V (Note 2) 160 mJ (Note 1) -9.4 A (Note 1) 3.8 -7.0 2.5 mJ V/ns W 38 0.3 -55 to +150 W W/°C °C 300 °C (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG Units V - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 3.28 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009 FQD11P06 / FQU11P06 January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -60 -- -- V -- -0.07 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.7 A -- 0.15 0.185 Ω gFS Forward Transconductance VDS = -30 V, ID = -4.7 A -- 4.9 -- S -- 420 550 pF -- 195 250 pF -- 45 60 pF -- 6.5 25 ns -- 40 90 ns -- 15 40 ns -- 45 100 ns -- 13 17 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25 Ω (Note 4, 5) VDS = -48 V, ID = -11.4 A, VGS = -10 V (Note 4, 5) -- 2.0 -- nC -- 6.3 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A ISM -- -- -37.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -9.4 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs (Note 4) -- 83 -- ns -- 0.26 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation Rev. C6,January 2009 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : -ID, Drain Current [A] 1 10 -ID , Drain Current [A] 1 10 0 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = -30V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics -IDR , Reverse Drain Current [A] 0.6 VGS = - 10V 0.4 VGS = - 20V 0.2 ※ Note : TJ = 25℃ 0.0 10 0 10 ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ 150℃ 20 30 40 10 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitance [pF] 1 10 -1 0 800 Coss Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 600 400 Crss 200 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation -VGS, Gate-Source Voltage [V] RDS(on) [Ω], Drain-Source On-Resistance 0.8 10 VDS = -30V 8 VDS = -48V 6 4 2 ※ Note : ID = -11.4 A 0 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. C6, January 2009 (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 -BVDSS, (Normalized) Drain-Source Breakdown Voltage FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 -ID, Drain Current [A] -ID, Drain Current [A] 8 100 µs 1 ms 1 10 10 ms DC 0 10 ※ Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area Zθ JC(t), Thermal Response 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 10 0 .0 2 -1 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation Rev. C5, October 2008 FQD11P06 / FQU11P06 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2009 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev. C6, January 2009 (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 -BVDSS, (Normalized) Drain-Source Breakdown Voltage FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 -ID, Drain Current [A] -ID, Drain Current [A] 8 100 µs 1 ms 1 10 10 ms DC 0 10 ※ Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area Zθ JC(t), Thermal Response 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 10 0 .0 2 -1 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009 TO-252 (DPAK) (FS PKG Code 36) 1:1 FQD11P06 / FQU11P06 Mechanical Dimensions Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 ©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009 FQD11P06 / FQU11P06 Mechanical Dimensions I - PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. . Rev. I37 ©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009 FQD11P06 / FQU11P06 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.