BTA06 and BTB06 Series ® 6A TRIACS SNUBBERLESS™, LOGIC LEVEL & STANDARD Table 1: Main Features A2 Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IGT (Q1) 5 to 50 mA G A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA06 and BTB06 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... A1 A2 G A1 A2 G TO-220AB Insulated (BTA06) Table 2: Order Codes Part Number BTA06-xxxxxRG BTB06-xxxxxRG The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). TO-220AB (BTB06) Marking See page table 8 on page 6 Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM Parameter RMS on-state current (full sine wave) TO-220AB TO-220AB Ins. Tc = 105°C Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25°C) F = 60 Hz I²t Value for fusing tp = 10 ms dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz IGM Peak gate current tp = 20 µs I²t PG(AV) Tstg Tj February 2006 Tc = 110°C Average gate power dissipation Storage junction temperature range Operating junction temperature range REV. 6 Value Unit 6 A t = 20 ms 60 t = 16.7 ms 63 A 21 A²s Tj = 125°C 50 A/µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C 1/7 BTA06 and BTB06 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) SNUBBERLESS and Logic Level (3 quadrants) ■ Symbol IGT (1) VGT Test Conditions VD = 12 V RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT dV/dt (2) BTA06 / BTB06 Quadrant Without snubber 5 10 35 50 Unit MAX. 1.3 V I - II - III MIN. 0.2 V MAX. VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C BW I - II - III II (dI/dt)c (2) (dV/dt)c = 10 V/µs CW MAX. I - III Tj = 125°C SW I - II - III MAX. (dV/dt)c = 0.1 V/µs TW MIN. MIN. Tj = 125°C 10 15 35 50 10 25 50 70 15 30 60 80 20 40 400 1000 2.7 3.5 - - 1.2 2.4 - - - - 3.5 5.3 mA mA mA V/µs A/ms Standard (4 quadrants) ■ Symbol IGT (1) Quadrant RL = 30 Ω I - II - III IV MAX. ALL MAX. 1.3 V ALL MIN. 0.2 V VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT dV/dt (2) BTA06 / BTB06 Test Conditions MAX. I - III - IV II VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 2.7 A/ms Tj = 125°C C B 25 50 50 100 25 50 Unit mA mA 40 50 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs MAX. mA Table 5: Static Characteristics Symbol Test Conditions VTM (2) ITM = 8.5 A Vt0 (2) tp = 380 µs Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM IRRM VDRM = VRRM 5 µA 1 mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. 2/7 Value Tj = 25°C Tj = 125°C MAX. BTA06 and BTB06 Series Table 6: Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Value TO-220AB 1.8 TO-220AB Insulated 2.7 TO-220AB TO-220AB Insulated 60 Unit °C/W °C/W Figure 2: RMS on-state current versus case temperature (full cycle) P(W) IT(RMS)(A) 8 7 7 6 BTB BTA 6 5 5 4 4 3 3 2 2 1 1 TC(°C) IT(RMS)(A) 0 0 0 1 2 3 4 5 6 Figure 3: Relative variation of thermal impedance versus pulse duration 0 25 50 75 100 125 Figure 4: On-state characteristics (maximum values) ITM(A) K=[Zth/Rth] 100 1E+0 Tj = Tj max. Tj max. Vt0 = 0.85V Rd = 60 mΩ Zth(j-c) Zth(j-a) 10 1E-1 tp(s) VTM(V) 1E-2 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/7 BTA06 and BTB06 Series Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t ITSM(A) 2 2 ITSM(A), I t (A s) 70 1000 Tj initial=25°C 60 t=20ms 50 One cycle dI/dt limitation: 50A/µs Non repetitive Tj initial=25°C 40 ITSM 100 30 Repetitive TC=105°C 20 I2t 10 Number of cycles 0 tp(ms) 10 1 10 100 1000 Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 0.01 IGT 1.5 IH & IL 1.0 0.5 Tj(°C) 0.0 0 20 40 10.00 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 -20 1.00 Figure 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Snubberless & logic level types) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 -40 0.10 60 80 100 120 BW/CW SW (dV/dt)c (V/µs) 0.1 140 Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Standard types) TW 1.0 10.0 100.0 Figure 10: Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.0 1.8 5 1.6 C 1.4 4 1.2 B 3 1.0 0.8 2 0.6 0.4 1 0.2 (dV/dt)c (V/µs) Tj(°C) 0.0 0 0.1 4/7 1.0 10.0 100.0 0 25 50 75 100 125 BTA06 and BTB06 Series Figure 11: Ordering Information Scheme BT A 06 - 600 BW (RG) Triac series Insulation A = insulated B = non insulated Current 06 = 6A Voltage 600 = 600V 800 = 800V Sensitivity and type B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level BW = 50mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Packing mode RG = Tube Table 7: Product Selector Part Number Voltage (xxx) Sensitivity Type X 50 mA Standard TO-220AB X X 50 mA Snubberless TO-220AB BTA/BTB06-xxxC X X 25 mA Standard TO-220AB BTA/BTB06-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB06-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB06-xxxTW X X 5 mA Logic Level TO-220AB 600 V 800 V BTA/BTB06-xxxB X BTA/BTB06-xxxBW Package BTB: non insulated TO-220AB package 5/7 BTA06 and BTB06 Series Figure 12: TO-220AB (insulated and non insulated) Package Mechanical Data REF. C B ØI b2 L F A I4 l3 c2 a1 l2 a2 M c1 b1 e A a1 a2 B b1 b2 C c1 c2 e F ØI I4 L l2 l3 M DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB06-xxxyzRG BTA/BTB06-xxxyz TO-220AB 2.3 g 50 Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History 6/7 Date Revision Apr-2002 5A 13-Feb-2006 6 Description of Changes Last update. TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. BTA06 and BTB06 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7