LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc BAT54RSLT1 30 VOLTS DUAL HOT- CARRIER DETECTOR AND SWITCHING DIODES 2 CATHODE 1 ANODE 3 3 CAHODE/ANODE 1 2 CASE 318–08, STYLE 11 SOT–23 (TO–236AB) DEVICE MARKING BAT54S = LD3 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit VR PF 30 Volts 225 1.8 mW mW/°C –55 to +125 –55 to +150 °C °C TJ T stg ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Symbol V (BR)R CT IR VF VF VF Min 30 — — — — — Typ — 7.6 0.5 0.22 0.41 0.52 Max — 10 2.0 0.24 0.5 1.0 Unit Volts pF µAdc Vdc Vdc Vdc t rr — — 5.0 ns VF VF — — 0.29 0.35 0.32 0.40 Vdc Vdc G12–1/1