AMD AM29LV800BB-70FI 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 3.0 volt-only boot sector flash memory Datasheet

Am29LV800B
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new and current designs,
S29AL008D supersedes Am29LV800B and is the factory-recommended migration path. Please refer
to the S29AL008D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 21490
Revision G
Amendment 5
Issue Date May 25, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
P R E L I M I N A R Y
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7
Special Handling Instructions for FBGA Package .. 9
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10
Standard Products ................................................ 10
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 11
Table 1. Am29LV800B Device Bus Operations ..........11
Word/Byte Configuration ...................................... 11
Requirements for Reading Array Data ................. 11
Writing Commands/Command Sequences .......... 11
Program and Erase Operation Status .................. 12
Standby Mode ...................................................... 12
Automatic Sleep Mode ......................................... 12
RESET#: Hardware Reset Pin ............................. 12
Output Disable Mode ............................................ 12
Table 2. Am29LV800BT Top Boot Block
Sector Addresses ........................................................13
Table 3. Am29LV800BB Bottom Boot Block
Sector Addresses ........................................................13
Autoselect Mode ................................................... 14
Table 4. Am29LV800B Autoselect Codes
(High Voltage Method) ................................................14
Sector Protection/Unprotection ............................ 14
Temporary Sector Unprotect ................................ 14
Figure 1. Temporary Sector Unprotect Operation....... 15
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms ....................................... 16
Hardware Data Protection .................................... 17
Command Definitions . . . . . . . . . . . . . . . . . . . . . 17
Reading Array Data .............................................. 17
Reset Command .................................................. 17
Autoselect Command Sequence .......................... 17
Word/Byte Program Command Sequence ........... 18
Figure 3. Program Operation ...................................... 18
Chip Erase Command Sequence ......................... 19
Sector Erase Command Sequence ...................... 19
Erase Suspend/Erase Resume Commands ......... 19
Figure 4. Erase Operation........................................... 20
Table 1. Am29LV800B Command Definitions .............21
Write Operation Status . . . . . . . . . . . . . . . . . . . . 22
DQ7: Data# Polling ............................................... 22
Figure 5. Data# Polling Algorithm ............................... 22
RY/BY#: Ready/Busy# ......................................... 22
DQ6: Toggle Bit I .................................................. 23
DQ2: Toggle Bit II ................................................. 23
Reading Toggle Bits DQ6/DQ2 ............................ 23
DQ5: Exceeded Timing Limits .............................. 23
( D R A F T )
DQ3: Sector Erase Timer ..................................... 24
Table 2. Write Operation Status ..................................25
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 26
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 26
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27
CMOS Compatible ............................................... 27
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) .......................................... 28
Figure 10. Typical ICC1 vs. Frequency ........................ 28
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 11. Test Setup.................................................. 29
Table 3. Test Specifications ........................................29
Key to Switching Waveforms. . . . . . . . . . . . . . . . 29
Figure 12. Input Waveforms and
Measurement Levels ................................................... 29
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 30
Read Operations .................................................. 30
Figure 13. Read Operations Timings .......................... 30
Hardware Reset (RESET#) .................................. 31
Figure 14. RESET# Timings........................................ 31
Word/Byte Configuration (BYTE#)
..................... 32
Figure 15. BYTE# Timings for Read Operations......... 32
Figure 16. BYTE# Timings for Write Operations ......... 32
Erase/Program Operations ................................... 33
Figure 17. Program Operation Timings ....................... 34
Figure 18. Chip/Sector Erase Operation Timings........ 35
Figure 19. Data# Polling Timings (During
Embedded Algorithms)................................................ 36
Figure 20. Toggle Bit Timings (During
Embedded Algorithms)................................................ 36
Figure 21. DQ2 vs. DQ6.............................................. 37
Temporary Sector Unprotect ................................ 37
Figure 22. Temporary Sector Unprotect
Timing Diagram ........................................................... 37
Figure 23. Sector Protect/Unprotect
Timing Diagram ........................................................... 38
Alternate CE# Controlled Erase/Program Operations
39
Figure 24. Alternate CE# Controlled Write
Operation Timings ....................................................... 40
Erase and Programming Performance . . . . . . . 41
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 41
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 41
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . 42
TS 048—48-Pin Standard TSOP ........................ 42
TSR048—48-Pin Reverse TSOP ........................ 43
FBB 048—48-Ball Fine-Pitch Ball Grid Array
(FBGA) 6 x 9 mm ................................................ 44
SO 044—44-Pin Small Outline Package ............. 45
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 6. Toggle Bit Algorithm..................................... 24
1
6/1/05
P R E L I M I N A R Y
6/1/05
( D R A F T )
2
Am29LV800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
For new designs, S29AL008D supersedes Am29LV800B and is the factory-recommended migration path for this device. Please refer to the S29AL008D Family Datasheet for specifications
and ordering information.
DISTINCTIVE CHARACTERISTICS
• Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
• Manufactured on 0.32 µm process
technology
— Compatible with 0.5 µm Am29LV800 device
• High performance
— Access times as fast as 70 ns
• Ultra low power consumption (typical
values at 5 MHz)
—
—
—
—
200 nA Automatic Sleep mode current
200 nA standby mode current
7 mA read current
15 mA program/e+5rase current
• Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
• Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
• Top or bottom boot block configurations
available
• Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
• Minimum 1 million write cycle guarantee
per sector
• 20-year data retention at 125°C
— Reliable operation for the life of the system
• Package option
—
—
—
—
48-ball FBGA
48-pin TSOP
44-pin SO
Known Good Die (KGD)
(see publication number 21536)
• Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
• Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
• Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
• Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
• Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This
Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21490
Rev: G Amendment/+5
Issue Date: May 25, 2005
GENERAL DESCRIPTION
The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The device is offered in 48-ball FBGA, 44-pin
SO, and 48-pin TSOP packages. The device is also
available in Known Good Die (KGD) form. For more
information, refer to publication number 21536. The
word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This
device requires only a single, 3.0 volt VCC supply to
perform read, program, and erase operations. A standard EPROM programmer can also be used to program
and erase the device.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and
benefits of the Am29LV800, which was manufactured
using 0.5 µm process technology. In addition, the
Am29LV800B features unlock bypass programming
and in-system sector protection/unprotection.
The standard device offers access times of 70, 90,
and 120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for
the program and erase operations.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register
using standard microprocessor write timings. Register contents serve as input to an internal statemachine that controls the erase and programming
circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase
operations. Reading data out of the device is similar
to reading from other Flash or EPROM devices.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program algorithm—an internal algorithm that automatically times the program pulse
widths and verifies proper cell margin. The Unlock
Bypass mode facilitates faster programming times
by requiring only two write cycles to program data
instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that auto-
4
matically preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data
from, or program data to, any sector that is not
selected for erasure. True background erase can thus
be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine
to reading array data. The RESET# pin may be tied to
the system reset circuitry. A system reset would thus
also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash
memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly
reduced in both these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
Am29LV800B
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7
Special Handling Instructions for FBGA Package .. 9
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10
Standard Products ................................................ 10
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 11
Table 1. Am29LV800B Device Bus Operations ..........11
Word/Byte Configuration ...................................... 11
Requirements for Reading Array Data ................. 11
Writing Commands/Command Sequences .......... 11
Program and Erase Operation Status .................. 12
Standby Mode ...................................................... 12
Automatic Sleep Mode ......................................... 12
RESET#: Hardware Reset Pin ............................. 12
Output Disable Mode ............................................ 12
Table 2. Am29LV800BT Top Boot Block
Sector Addresses ........................................................13
Table 3. Am29LV800BB Bottom Boot Block
Sector Addresses ........................................................13
Autoselect Mode ................................................... 14
Table 4. Am29LV800B Autoselect Codes
(High Voltage Method) ................................................14
Sector Protection/Unprotection ............................ 14
Temporary Sector Unprotect ................................ 14
Figure 1. Temporary Sector Unprotect Operation....... 15
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms ....................................... 16
Hardware Data Protection .................................... 17
Command Definitions . . . . . . . . . . . . . . . . . . . . . 17
Reading Array Data .............................................. 17
Reset Command .................................................. 17
Autoselect Command Sequence .......................... 17
Word/Byte Program Command Sequence ........... 18
Figure 3. Program Operation ...................................... 18
Chip Erase Command Sequence ......................... 19
Sector Erase Command Sequence ...................... 19
Erase Suspend/Erase Resume Commands ......... 19
Figure 4. Erase Operation........................................... 20
Table 1. Am29LV800B Command Definitions .............21
Write Operation Status . . . . . . . . . . . . . . . . . . . . 22
DQ7: Data# Polling ............................................... 22
Figure 5. Data# Polling Algorithm ............................... 22
RY/BY#: Ready/Busy# ......................................... 22
DQ6: Toggle Bit I .................................................. 23
DQ2: Toggle Bit II ................................................. 23
Reading Toggle Bits DQ6/DQ2 ............................ 23
DQ5: Exceeded Timing Limits .............................. 23
DQ3: Sector Erase Timer ..................................... 24
Table 2. Write Operation Status ..................................25
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 26
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 26
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27
CMOS Compatible ............................................... 27
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) .......................................... 28
Figure 10. Typical ICC1 vs. Frequency ........................ 28
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 11. Test Setup.................................................. 29
Table 3. Test Specifications ........................................29
Key to Switching Waveforms. . . . . . . . . . . . . . . . 29
Figure 12. Input Waveforms and
Measurement Levels ................................................... 29
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 30
Read Operations .................................................. 30
Figure 13. Read Operations Timings .......................... 30
Hardware Reset (RESET#) .................................. 31
Figure 14. RESET# Timings........................................ 31
Word/Byte Configuration (BYTE#)
..................... 32
Figure 15. BYTE# Timings for Read Operations......... 32
Figure 16. BYTE# Timings for Write Operations ......... 32
Erase/Program Operations ................................... 33
Figure 17. Program Operation Timings ....................... 34
Figure 18. Chip/Sector Erase Operation Timings........ 35
Figure 19. Data# Polling Timings (During
Embedded Algorithms)................................................ 36
Figure 20. Toggle Bit Timings (During
Embedded Algorithms)................................................ 36
Figure 21. DQ2 vs. DQ6.............................................. 37
Temporary Sector Unprotect ................................ 37
Figure 22. Temporary Sector Unprotect
Timing Diagram ........................................................... 37
Figure 23. Sector Protect/Unprotect
Timing Diagram ........................................................... 38
Alternate CE# Controlled Erase/Program Operations
39
Figure 24. Alternate CE# Controlled Write
Operation Timings ....................................................... 40
Erase and Programming Performance . . . . . . . 41
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 41
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 41
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . 42
TS 048—48-Pin Standard TSOP ........................ 42
TSR048—48-Pin Reverse TSOP ........................ 43
FBB 048—48-Ball Fine-Pitch Ball Grid Array
(FBGA) 6 x 9 mm ................................................ 44
SO 044—44-Pin Small Outline Package ............. 45
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 6. Toggle Bit Algorithm..................................... 24
Am29LV800B
5
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Am29LV800B
Full Voltage Range: VCC = 2.7–3.6 V
-70
-90
-120
Max access time, ns (tACC)
70
90
120
Max CE# access time, ns (tCE)
70
90
120
Max OE# access time, ns (tOE)
30
35
50
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
VCC
DQ0–DQ15 (A-1)
RY/BY#
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
BYTE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
A0–
A18
6
Timer
Address Latch
STB
Am29LV800B
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21536 for
more information.
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
Reverse TSOP
Am29LV800B
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
21490G-1
7
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21536 for
more information.
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
SO
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
FBGA
Top View, Balls Facing Down
8
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
VSS
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
A18
NC
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
Am29LV800B
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
PIN CONFIGURATION
NC
A0–A18
LOGIC SYMBOL
= 19 addresses
DQ0–DQ14= 15 data inputs/outputs
= Pin not connected internally
19
DQ15/A-1 = DQ15 (data input/output, word
mode),
A-1 (LSB address input, byte
mode)
A0–A18
BYTE#
= Selects 8-bit or 16-bit mode
CE#
CE#
= Chip enable
OE#
OE#
= Output enable
WE#
WE#
= Write enable
RESET#
RESET#
= Hardware reset pin, active low
BYTE#
RY/BY#
= Ready/Busy# output
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed
options and voltage supply
tolerances)
VSS
= Device ground
Am29LV800B
16 or 8
DQ0–DQ15
(A-1)
RY/BY#
9
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29LV800B
T
-70
E
C
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
D
= Commercial (0°C to +70°C) with Pb-free package
I
= Industrial (–40°C to +85°C)
F
= Industrial (–40°C to +85°C) with Pb-free package
E
= Extended (–55°C to +125°C)
K
= Extended (–55°C to +125°C) with Pb-free package
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
F
= 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048)
S
= 44-Pin Small Outline Package (SO 044)
WB
= 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 9 mm package (FBB048)
This device is also available in Known Good Die (KGD) form. See publication
number 21536 for more information.
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations for TSOP and SO Packages
AM29LV800BT-70,
AM29LV800BB-70
AM29LV800BT-90,
AM29LV800BB-90
AM29LV800BT-120,
AM29LV800BB-120
Valid Combinations for FBGA Packages
Order Number
EC, EI, FC, FI, SC, SI,
ED, EF, SD, SF
EC, EI, EE, ED, EF
FC, FI, FE,
SC, SI, SE, SD, SF, EK, SK
Package Marking
WBC,
WBD,
WBI,
WBF
AM29LV800BT-70,
AM29LV800BB-70
AM29LV800BT-90,
AM29LV800BB-90
AM29LV800BT-120,
AM29LV800BB-120
WBC,
WBI,
WBD,
WBF,
WBK,
WBE
L800BT70V,
L800BB70V
L800BT90V,
L800BB90V
L800BT12V,
L800BB12V
C, D,
I, F
C, I,
D, F
K, E
Valid Combinations
Valid Combinations list configurations planned to be
supported in volume for this device. Consult the local
AMD sales office to confirm availability of specific
valid combinations and to check on newly released
combinations.
10
Am29LV800B
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register itself does not occupy any addressable memory
location. The register is composed of latches that
store the commands, along with the address and data
information needed to execute the command. The
Table 1.
contents of the register serve as inputs to the internal
state machine. The state machine outputs dictate the
function of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Am29LV800B Device Bus Operations
DQ8–DQ15
Operation
CE#
OE#
WE
#
RESET#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
DIN
X
X
Standby
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
X
X
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device
is in word configuration, DQ15–DQ0 are active and
controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at V IH . The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array
data upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the
memory content occurs during the power transition.
No command is necessary in this mode to obtain
array data. Standard microprocessor read cycles that
assert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in
the DC Characteristics table represents the active
current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
Am29LV800B
11
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a word or byte, instead of four.
The “Word/Byte Program Command Sequence”
section has details on programming data to the
device using both standard and Unlock Bypass
command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Command Definitions”
section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode.
The system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings
apply in this mode. Refer to the “Autoselect Mode”
and “Autoselect Command Sequence” sections for
more information.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The
“AC Characteristics” section contains timing specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system
may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings
and I CC read specifications apply. Refer to “Write
Operation Status” for more information, and to “AC
Characteristics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the
device, it can place the device in the standby mode.
In this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not
within VCC ± 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The
device requires standard access time (tCE) for read
access when the device is in either of these standby
modes, before it is ready to read data.
In the DC Characteristics table, ICC3 and ICC4 represents the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses remain stable for
tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC4 in the DC Characteristics table represents the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of
resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP,
the device immediately terminates any operation
in progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state
machine to reading array data. The operation that
was interrupted should be reinitiated once the device
is ready to accept another command sequence, to
ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is
held at VIL but not within VSS±0.3 V, the standby
current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up
firmware from the Flash memory.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is complete, which
requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to
determine whether the reset operation is complete. If
RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset
operation is completed within a time of tREADY (not
during Embedded Algorithms). The system can read
data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 14 for the timing diagram.
Output Disable Mode
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
12
Am29LV800B
When the OE# input is at VIH, output from the device
is disabled. The output pins are placed in the high
impedance state.
Table 2. Am29LV800BT Top Boot Block Sector Addresses
Address Range (in hexadecimal)
Sector
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
0
X
X
X
64/32
00000h–0FFFFh
SA1
0
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA2
0
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA3
0
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA4
0
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA5
0
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA6
0
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA7
0
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
SA8
1
0
0
0
X
X
X
64/32
80000h–8FFFFh
40000h–47FFFh
(x8)
Address Range
(x16)
Address Range
00000h–07FFFh
SA9
1
0
0
1
X
X
X
64/32
90000h–9FFFFh
48000h–4FFFFh
SA10
1
0
1
0
X
X
X
64/32
A0000h–AFFFFh
50000h–57FFFh
SA11
1
0
1
1
X
X
X
64/32
B0000h–BFFFFh
58000h–5FFFFh
SA12
1
1
0
0
X
X
X
64/32
C0000h–CFFFFh
60000h–67FFFh
SA13
1
1
0
1
X
X
X
64/32
D0000h–DFFFFh
68000h–6FFFFh
SA14
1
1
1
0
X
X
X
64/32
E0000h–EFFFFh
70000h–77FFFh
SA15
1
1
1
1
0
X
X
32/16
F0000h–F7FFFh
78000h–7BFFFh
SA16
1
1
1
1
1
0
0
8/4
F8000h–F9FFFh
7C000h–7CFFFh
SA17
1
1
1
1
1
0
1
8/4
FA000h–FBFFFh
7D000h–7DFFFh
SA18
1
1
1
1
1
1
X
16/8
FC000h–FFFFFh
7E000h–7FFFFh
Table 3.
Am29LV800BB Bottom Boot Block Sector Addresses
Address Range (in hexadecimal)
Sector
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
0
0
0
X
16/8
00000h–03FFFh
00000h–01FFFh
SA1
0
0
0
0
0
1
0
8/4
04000h–05FFFh
02000h–02FFFh
SA2
0
0
0
0
0
1
1
8/4
06000h–07FFFh
03000h–03FFFh
SA3
0
0
0
0
1
X
X
32/16
08000h–0FFFFh
04000h–07FFFh
SA4
0
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA5
0
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA6
0
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA7
0
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA8
0
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
30000h–37FFFh
(x8)
Address Range
(x16)
Address Range
SA9
0
1
1
0
X
X
X
64/32
60000h–6FFFFh
SA10
0
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
SA11
1
0
0
0
X
X
X
64/32
80000h–8FFFFh
40000h–47FFFh
SA12
1
0
0
1
X
X
X
64/32
90000h–9FFFFh
48000h–4FFFFh
SA13
1
0
1
0
X
X
X
64/32
A0000h–AFFFFh
50000h–57FFFh
SA14
1
0
1
1
X
X
X
64/32
B0000h–BFFFFh
58000h–5FFFFh
SA15
1
1
0
0
X
X
X
64/32
C0000h–CFFFFh
60000h–67FFFh
SA16
1
1
0
1
X
X
X
64/32
D0000h–DFFFFh
68000h–6FFFFh
SA17
1
1
1
0
X
X
X
64/32
E0000h–EFFFFh
70000h–77FFFh
SA18
1
1
1
1
X
X
X
64/32
F0000h–FFFFFh
78000h–7FFFFh
Note for Tables 2 and 3: Address range is A18:A-1 in byte
mode and A18:A0 in word mode. See “Word/Byte
Configuration” section.
Am29LV800B
13
Autoselect Mode
Table 4. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t
care. When all necessary bits have been set as
required, the programming equipment may then read
the corresponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and
device identification, and sector protection verification, through identifier codes output on DQ7–DQ0.
This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 1. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 4.
Description
A18 A11
to
to
WE# A12 A10
CE#
OE#
Manufacturer ID: AMD
L
L
H
Device ID:
Am29LV800B
(Top Boot Block)
Word
L
L
H
Byte
L
L
H
Device ID:
Am29LV800B
(Bottom Boot
Block)
Word
L
L
H
Byte
L
L
H
Sector Protection
Verification
Mode
Am29LV800B Autoselect Codes (High Voltage Method)
L
L
H
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
X
01h
22h
DAh
X
DAh
22h
5Bh
X
5Bh
X
01h
(protected)
X
00h
(unprotected
)
X
X
VID
X
L
X
L
L
X
X
VID
X
L
X
L
H
X
SA
X
X
VID
VID
X
X
L
L
X
X
L
H
H
L
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector
Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for
details.
Sector Protection/unprotection can be implemented
via two methods.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithms and Figure 23 shows the timing diagram. This
method uses standard microprocessor bus cycle
14
timing. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect write cycle.
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices.
Publication number 20536 contains further details;
contact an AMD representative to request a copy.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting the
RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by
selecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algorithm, and Figure 22 shows the timing diagrams, for
this feature.
Am29LV800B
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 1.
Temporary Sector Unprotect Operation
Am29LV800B
15
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 ms
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 ms
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 μs
Increment
PLSCNT
No
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Yes
No
Yes
Device failed
PLSCNT
= 1000?
Protect another
sector?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Data = 00h?
Yes
Last sector
verified?
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms
16
Am29LV800B
Set up
next sector
address
No
No
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 1 for
command definitions). In addition, the following
hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When V CC is less than V LKO, the device does not
accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored
until V CC is greater than VLKO . The system must
provide the proper signals to the control pins to
prevent unintentional writes when VCC is greater than
VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= VIL, CE# = VIH or WE# = VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register
command sequences. Writing incorrect address
and data values or writing them in the improper
sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever
happens first. Refer to the appropriate timing diagrams in the “AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in
the Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more information on this mode.
The system must issue the reset command to reenable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Array Data” in
the “Device Bus Operations” section for more information. The Read Operations table provides the read
parameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the
sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is protected. Table 1 shows the address and data requirements. This method is an alternative to that shown in
Table 4, which is intended for PROM programmers
and requires VID on address bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
Am29LV800B
17
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code.
A read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode)
returns 01h if that sector is protected, or 00h if it is
unprotected. Refer to Tables 2 and 3 for valid sector
addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide
further controls or timings. The device automatically
provides internally generated program pulses and
verifies the programmed cell margin. Table 1 shows
the address and data requirements for the byte
program command sequence.
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in the same manner. This
mode dispenses with the initial two unlock cycles
r e q u i r e d i n t h e s t a n d a r d p r o g ra m c o m m a n d
sequence, resulting in faster total programming time.
Table 1 shows the requirements for the command
sequence.
During the unlock bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t care for both cycles. The device then returns
to reading array data.
Figure 3 illustrates the algorithm for the program
operation. See the Erase/Program Operations table in
“AC Characteristics” for parameters, and to Figure 17
for timing diagrams.
START
Write Program
Command Sequence
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. See “Write Operation
Status” for information on these status bits.
Embedded
Program
algorithm
in progress
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that
a hardware reset immediately terminates the program ming o perat ion. The progra m comm and
sequence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1”, or cause the
Data# Polling algorithm to indicate the operation was
successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert
a “0” to a “1”.
Verify Data?
Yes
Increment Address
18
No
Last Address?
Yes
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to
program bytes or words to the device faster than
using the standard program command sequence. The
unlock bypass command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle containing the unlock bypass command,
20h. The device then enters the unlock bypass mode.
A two-cycle unlock bypass program command
Data Poll
from System
Programming
Completed
Note: See Table 1 for program command sequence.
Am29LV800B
Figure 3.
Program Operation
No
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip
erase command, which in turn invokes the Embedded
Erase algorithm. The device does not require the
system to preprogram prior to erase. The Embedded
Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to
provide any controls or timings during these operations. Table 1 shows the address and data requirements for the chip erase command sequence.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. Note that a
hardware reset during the chip erase operation
immediately terminates the operation. The Chip
Erase command sequence should be reinitiated once
the device has returned to reading array data, to
ensure data integrity.
The system can determine the status of the erase
operation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these
status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data
and addresses are no longer latched.
Figure 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 18 for
timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 1 shows the address and data
r e q u i r e m e n t s f o r t h e s e c t o r e ra s e c o m m a n d
sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded
Erase algorithm automatically programs and verifies
the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations.
After the command sequence is written, a sector
erase time-out of 50 µs begins. During the time-out
period, additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number
of sectors may be from one sector to all sectors. The
time between these additional cycles must be less
than 50 µs, otherwise the last address and command
might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled
during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. If the time
between additional sector erase commands can be
assumed to be less than 50 µs, the system need not
monitor DQ3. Any command other than Sector
Erase or Erase Suspend during the time-out
period resets the device to reading array data.
The system must rewrite the command sequence and
any additional sector addresses and commands.
The system can monitor DQ3 to determine if the
sector erase timer has timed out. (See the “DQ3:
Sector Erase Timer” section.) The time-out begins
from the rising edge of the final WE# pulse in the
command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset
during the sector erase operation immediately terminates the operation. The Sector Erase command
sequence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. Refer to “Write Operation Status”
for information on these status bits.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and
to Figure 18 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during
the Sector Erase time-out immediately terminates
the time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the
Erase Suspend command.
When the Erase Suspend command is written during
a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is
written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device
“erase suspends” all sectors selected for erasure.)
Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0.
The system can use DQ7, or DQ6 and DQ2 together,
Am29LV800B
19
to determine if a sector is actively erasing or is erasesuspended. See “Write Operation Status” for information on these status bits.
START
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for
more information.
Write Erase
Command Sequence
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
v a l i d o p e r a t i o n . S e e “A u t o s e l e c t C o m m a n d
Sequence” for more information.
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be
written after the device has resumed erasing.
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 1 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4.
20
Am29LV800B
Erase Operation
Table 1.
Am29LV800B Command Definitions
Bus Cycles (Notes 2-5)
Cycles
Command
Sequence
(Note 1)
First
Second
Addr
Dat
a
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Autoselect (Note 8)
Manufacturer ID
Word
Byte
Device ID,
Top Boot Block
Word
Device ID,
Bottom Boot Block
Word
Sector Protect Verify
(Note 9)
Program
Unlock Bypass
Byte
Byte
4
4
4
Word
555
AAA
555
AAA
555
AAA
AA
AA
AA
555
4
Addr
2AA
555
2AA
555
2AA
555
Dat
a
55
55
55
2AA
AA
555
555
AAA
AA
555
2AA
555
55
55
XXX
A0
PA
PD
XXX
90
XXX
00
Word
Byte
Word
Byte
2
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
2AA
555
2AA
555
90
90
90
2AA
3
22DA
AAA
555
Byte
X01
555
Word
Word
01
555
AAA
AA
X00
AAA
555
AAA
90
555
AAA
4
Data
AAA
Byte
Byte
Addr
555
Unlock Bypass Reset (Note 11)
Sector Erase
Addr
Fourth
Dat
a
55
Unlock Bypass Program (Note 10) 2
Chip Erase
Third
55
55
AAA
555
AAA
555
AAA
555
AAA
X02
DA
X01
225B
X02
5B
(SA)
X02
XX00
(SA)
X04
00
PA
PD
A0
Fifth
Dat
Addr
a
Sixth
Addr
Dat
a
XX01
01
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
5. Address bits A18–A11 are don’t cares for unlock and command cycles, unless PA or SA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more
information.
10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase operation.
13. The Erase Resume command is valid only during the Erase Suspend mode.
Am29LV800B
21
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a write operation: DQ2, DQ3, DQ5, DQ6,
DQ7, and RY/BY#. Table 2 and the following subsections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed
first.
START
Read DQ7–DQ0
Addr = VA
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Algorithm is in
progress or completed, or whether the device is in
Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the program or erase
command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to prog ra m m i n g d u r i n g E ra s e S u s p e n d . W h e n t h e
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid
status information on DQ7. If a program address falls
within a protected sector, Data# Polling on DQ7 is
active for approximately 1 µs, then the device returns
to reading array data.
DQ7 = Data?
No
No
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is
because DQ7 may change asynchronously with DQ0–
DQ6 while Output Enable (OE#) is asserted low.
Figure 19, Data# Polling Timings (During
Embedded Algorithms), in the “AC Characteristics”
section illustrates this.
Table 2 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm.
22
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the
Erase Suspend mode, Data# Polling produces a “1”
on DQ7. This is analogous to the complement/true
datum output described for the Embedded Program
algorithm: the erase function changes all the bits in a
sector to “1”; prior to this, the device outputs the
“complement,” or “0.” The system must provide an
address within any of the sectors selected for erasure
to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs,
then the device returns to reading array data. If not
all selected sectors are protected, the Embedded
Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 5. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-drain
output, several RY/BY# pins can be tied together in
parallel with a pull-up resistor to VCC.
Am29LV800B
If the output is low (Busy), the device is actively
erasing or programming. (This includes programming
in the Erase Suspend mode.) If the output is high
(Ready), the device is ready to read array data
(including during the Erase Suspend mode), or is in
the standby mode.
Table 2 shows the outputs for RY/BY#. Figures 13, 14,
17 and 18 shows RY/BY# for read, reset, program,
and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any
address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
cause DQ6 to toggle. (The system may use either
OE# or CE# to control the read cycles.) When the
operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6
toggles for approximately 100 µs, then returns to
reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which
sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on
“DQ7: Data# Polling”).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
Table 2 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 20 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 21 shows the differences
between DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in
progress), or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the final
WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector
and mode information. Refer to Table 2 to compare
outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains
the algorithm. See also the “DQ6: Toggle Bit I” subsection. Figure 20 shows the toggle bit timing diagram. Figure 21 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of the
toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase
operation. The system can read array data on DQ7–
DQ0 on the following read cycle.
However, if after the initial two read cycles, the
system determines that the toggle bit is still toggling,
the system also should note whether the value of DQ5
is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no
longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation
successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to
monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in
the previous paragraph. Alternatively, it may choose
to perform other system tasks. In this case, the
system must start at the beginning of the algorithm
when it returns to determine the status of the operation (top of Figure 6).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle
was not successfully completed.
Am29LV800B
23
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition,
the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a
“1.”
START
Read DQ7–DQ0
Under both these conditions, the system must issue
the reset command to return the device to reading
array data.
(Note
Read DQ7–DQ0
DQ3: Sector Erase Timer
Toggle Bit
= Toggle?
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
an erase operation has begun. (The sector erase
timer does not apply to the chip erase command.) If
additional sectors are selected for erasure, the entire
time-out also applies after each additional sector
erase command. When the time-out is complete, DQ3
switches from “0” to “1.” The system may ignore DQ3
if the system can guarantee that the time between
additional sector erase commands will always be less
than 50 µs. See also the “Sector Erase Command
Sequence” section.
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
(Notes
1, 2)
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read
DQ3. If DQ3 is “1”, the internally controlled erase
cycle has begun; all further commands (other than
Erase Suspend) are ignored until the erase operation
is complete. If DQ3 is “0”, the device will accept additional sector erase commands. To ensure the
command has been accepted, the system software
should check the status of DQ3 prior to and following
each subsequent sector erase command. If DQ3 is
high on the second status check, the last command
might not have been accepted. Table 2 shows the
outputs for DQ3.
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 6.
24
Toggle Bit Algorithm
Am29LV800B
Table 2. Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
Erase
Suspend
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Am29LV800B
25
ABSOLUTE MAXIMUM RATINGS
Voltage with Respect to Ground
Storage Temperature
Plastic Packages . . . . . . . . . . . . . .–65°C to +150°C
. . . . . . . . . . . . . . . . VCC (Note 1)–0.5 V to +4.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . . –0.5 V to +12.5 V
Ambient Temperature
with Power Applied . . . . . . . . . . . .–65°C to +125°C
. . . . . . All other pins (Note 1)–0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to –
2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may
undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9 is +12.5 V which
may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one
second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections
of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA). . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA). . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA). . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range . . +3.0 V to +3.6 V
VCC for full voltage range . . . . . . +2.7 V to +3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
20 ns
+0.8 V
VCC
+2.0 V
–0.5 V
VCC
+0.5 V
–2.0 V
2.0 V
20 ns
Figure 7.
26
20 ns
Maximum Negative Overshoot
Waveform
Am29LV800B
Figure 8.
20 ns
Maximum Positive Overshoot
Waveform
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
7
12
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
7
12
1 MHz
2
4
mA
ICC2
VCC Active Write Current
(Notes 2, 3, 5)
CE# = VIL, OE# = VIH
15
30
mA
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC±0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
VOH2
VLKO
Output High Voltage
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage (Note
4)
2.3
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
5. Not 100% tested.
Am29LV800B
27
DC CHARACTERISTICS (Continued)
Zero Power Flash
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
Supply Current in mA
8
3.6 V
6
2.7 V
4
2
0
1
2
3
Frequency in MHz
Note: T = 25 °C
Figure 10.
28
Typical ICC1 vs. Frequency
Am29LV800B
4
5
TEST CONDITIONS
Table 3.
3.3
Test Specifications
Test Condition
2.7 kΩ
Device
Under
Test
Output Load
6.2 kΩ
30
Input Rise and Fall Times
Figure 11.
100
pF
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
CL
-90,
-120
-70
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12. Input Waveforms and
Measurement Levels
Am29LV800B
29
AC CHARACTERISTICS
Read Operations
Parameter
Speed Options
JEDEC
Std
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
tGHQZ
tAXQX
Description
Test Setup
-70
-90
-120
Unit
Min
70
90
120
ns
CE# = VIL
OE# = VIL
Max
70
90
120
ns
OE# = VIL
Max
70
90
120
ns
Output Enable to Output Delay
Max
30
35
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Min
0
ns
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 3 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tD
tO
OE#
tOEH
WE
tCE
HIGH Z
Outputs
tO
Output Valid
RESET#
RY/BY#
0V
Figure 13.
30
Read Operations Timings
Am29LV800B
HIGH Z
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. RESET# Timings
Am29LV800B
31
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Speed Options
Std
Description
-70
-90
5
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
30
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
70
90
120
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
DQ0–DQ14
tELFL
Data Output
(DQ0–DQ14)
Address
Input
DQ15
Output
DQ15/A-1
Data
Output
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
DQ0–DQ14
Data
Output
DQ15/A-1
Address
Input
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQ
V
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
32
-120
Am29LV800B
ns
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
9
Word
Typ
11
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
90
ns
tBUSY
35
35
50
ns
ns
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV800B
33
AC CHARACTERISTICS
Read Status Data (last two cycles)
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
tC
OE#
tWHWH1
tW
WE#
tWPH
tCS
tD
tD
A0h
Data
PD
Statu
tBUSY
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
34
Am29LV800B
DOUT
tRB
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data
2AAh
SA
VA
VA
555h for chip erase
tA
CE#
tC
OE#
tW
WE#
tWP
tCS
tWHWH
tD
tD
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVC
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18.
Chip/Sector Erase Operation Timings
Am29LV800B
35
AC CHARACTERISTICS
tRC
dresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
DQ7
Complement
Compleme
Status
Status
Q0–DQ6
High
Valid Data
Tru
High
Valid Data
Tru
tBUS
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
ead cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High
DQ6/DQ2
tBUS
Valid
Valid
(first read)
(second read)
Valid
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
36
Am29LV800B
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase
Erase Suspend
Read
Erase
Complete
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21.
DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std
tVIDR
tRSP
Description
VID Rise and Fall Time (See Note)
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22.
Temporary Sector Unprotect
Timing Diagram
Am29LV800B
37
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
Valid*
A1, A0
Valid*
Sector Protect/Unprotect
Data
60h
Verify
60h
40h
Sector Protect: 150 μs
Sector Unprotect: 15 ms
1 μs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23.
38
Valid*
Sector Protect/Unprotect
Timing Diagram
Am29LV800B
Status
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Byte
Typ
9
Word
Typ
11
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
0
35
35
ns
50
ns
ns
µs
sec
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV800B
39
AC CHARACTERISTICS
555 for programPA for program
2AA for erase SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or
tCP
CE#
tWS
tCPH
tD
tBUS
tD
DQ7
Data
tR
DOUT
A0 for program PD for program
55 for erase
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written
to the device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
40
Am29LV800B
ERASE AND PROGRAMMING PERFORMANCE
Typ (Note
1)
Max (Note 2)
Unit
Sector Erase Time
0.7
15
s
Chip Erase Time
14
Parameter
s
Byte Programming Time
9
300
µs
Word Programming Time
11
360
µs
Chip Programming Time
Byte Mode
9
27
s
(Note 3)
Word Mode
5.8
17
s
Comments
Excludes 00h programming
prior to erasure
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 1 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V,
one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
Am29LV800B
41
PHYSICAL DIMENSIONS*
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic
Space Centering.
42
Am29LV800B
PHYSICAL DIMENSIONS
TSR048—48-Pin Reverse TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic
Space Centering.
Am29LV800B
43
PHYSICAL DIMENSIONS
FBB 048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6 x 9 mm
Dwg rev AF; 10/99
44
Am29LV800B
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package
Dwg rev AC; 10/99
45
Am29LV800B
REVISION SUMMARY
In Note 2, the worst case endurance is now 1 million
cycles.
Revision E (January 1998)
Revision F (January 1999)
Distinctive Characteristics
Changed typical read and program/erase current
specifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
In-System Sector Protect/Unprotect
Algorithm Figure
Global
Changed references for process technology to “0.32
µm.”
Replaced the 70R ns regulated voltage speed option
with 70 ns full voltage speed option.
Distinctive Characteristics
Corrected A6 to 0, Changed wait specification to 150
µs on sector protect and 15 ms on sector unprotect.
Added 20-year data retention bullet.
DC Characteristics
Reverse TSOP: Modified markings.
Changed typical read and program/erase current
specifications.
FBGA: Replaced Bump side (bottom) view with top
view.
AC Characteristics
Ordering Information
Alternate CE# Controlled Erase/Program Operations:
Changed t CP to 35 ns for 70R, 80, and 90 speed
options.
Valid Combinations for FBGA Packages: New Table.
Erase and Programming Performance
ICC1, ICC2, ICC3, ICC4, ICC5: Added Note 2 “Maximum
ICC specifications are tested with VCC = VCCmax”.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Connection Diagrams
DC Characteristics—CMOS Compatible
ICC3, ICC4: Deleted VCC = VCCmax.
Physical Dimensions
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Changed package drawing to FBB048.
Revision E+1 (March 1998)
Physical Dimensions
In-System Sector Protect/Unprotect
Algorithms Figure
Corrected ball grid layout on FBB048 drawing. Added
“048” to drawing title.
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another
sector?” back to setting up the next sector address.
Revision F+2 (February 1999)
DC Characteristics
Changed Note 1 to indicate that OE# is at VIH for the
listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes
reference for tWHWH1 and tWHWH2. These parameters
are 100% tested. Corrected the note reference for
tVCS. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect
Timing Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
Revision F+1 (February 1999)
Distinctive Characteristics, Operating
Ranges
Corrected to indicate that the VCC voltage range for
all devices is 2.7–3.6 V.
Revision F+3 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision F+4 (July 26, 1999)
Global
Added the 70R speed option, which is available in the
extended temperature range.
Ordering Information
Deleted the extended temperature range from the
FBGA valid combinations.
Revision G (November 10, 1999)
Ordering Information
Deleted commercial and industrial temperature
ranges from the 70R speed option.
Am29LV800B
46
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18.
Chip/Sector Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision G+3 (June 4, 2004)
Ordering Information
Added Lead-free (Pb-free) options to the Temperature range breakout of the OPN table and to the Valid
Combinations table.
Revision G+4 (January 20, 2005)
Revision G+1 (July 7, 2000)
Added migration statement to cover page and first
page of data sheet.
Ordering Information
Added Colophon.
Inserted dashes into ordering part numbers. Deleted
burn-in option.
Updated Trademark
Revision G+2 (August 14, 2000)
Revision G+5 (May 25, 2005)
Updated migration statement on cover page and first
page of data sheet.
Global
Deleted 70R and 80 ns speed options and burn-in
option.
Updated trademarks.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on
export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced
Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only
and may be trademarks of their respective companies
47
Am29LV800B