HUR6040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 400 HUR6040PT Symbol VRRM V 400 Test Conditions IFRMS IFAVM TC=140oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive Ptot TC=25oC Md mounting torque P1 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit 70 2 x 30 A tbd A tbd mJ tbd A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. typical o C 165 W 0.8...1.2 Nm 6 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR6040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.11 1.46 V RthJC RthCH 0.25 IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC trr VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 30 o IRM 0.9 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders 5.5 ns 6.8 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR6040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 70 A 60 1600 50 TVJ= 100°C VR = 200V nC IRM 1200 IF 50 Qr TVJ=150°C TVJ=100°C TVJ= 25°C 40 30 20 10 10 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF 2.0 0 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt trr 80 1.0 200 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt TVJ= 100°C IF = 30A V VFR IF= 60A IF= 30A IF= 15A 70 IRM 0 15 TVJ= 100°C VR = 200V ns Kf 0 A/us 1000 -diF/dt 90 1.5 IF= 60A IF= 30A IF= 15A 20 400 0 0.0 40 30 IF= 60A IF= 30A IF= 15A 800 TVJ= 100°C VR = 200V A 0.0 10 40 80 120 °C 160 50 0 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 400 600 800 1000 A/us -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 0.4 VFR 0.2 0 0 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 tfr 60 Qr 0 ıus tfr 5 0.5 0.6 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com