Samsung K4E641612C-T50 4m x 16bit cmos dynamic ram with extended data out Datasheet

K4E661612C,K4E641612C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated
using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Extended Data Out Mode operation
• Part Identification
• 2 CAS Byte/Word Read/Write operation
- K4E661612C-TC/L(3.3V, 8K Ref.)
- K4E641612C-TC/L(3.3V, 4K Ref.)
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Active Power Dissipation
• Early Write or output enable controlled write
Unit : mW
Speed
8K
4K
-45
324
468
-50
288
432
-60
252
396
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
• Refresh Cycles
Refresh
cycle
K4E661612C*
8K
K4E641612C
4K
FUNCTIONAL BLOCK DIAGRAM
Refresh time
Normal
L-ver
64ms
128ms
RAS
UCAS
LCAS
W
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Refresh Timer
Refresh Counter
tRAC
tCAC
tRC
tHPC
-45
45ns
12ns
74ns
17ns
-50
50ns
13ns
84ns
20ns
-60
60ns
15ns
104ns
25ns
A0~A12
(A0~A11)*1
Row Address Buffer
A0~A8
(A0~A9)*1
Col. Address Buffer
Vcc
Vss
VBB Generator
Lower
Data in
Buffer
Row Decoder
Refresh Control
• Performance Range
Speed
Control
Clocks
Memory Array
4,194,304 x 16
Cells
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Sense Amps & I/O
Part
NO.
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
K4E661612C,K4E641612C
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4E661612C-T
• K4E641612C-T
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
VCC
W
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
VSS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A7
A6
VSS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
Pin function
A0 - A12
Address Inputs(8K Product)
A0 - A11
Address Inputs(4K Product)
DQ0 - 15
Data In/Out
VSS
Ground
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
VCC
Power(+3.3V)
N.C
No Connection
K4E661612C,K4E641612C
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
VIN,VOUT
-0.5 to +4.6
V
Voltage on V CC supply relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
PD
1
W
IOS Address
50
mA
Voltage on any pin relative to VSS
Power Dissipation
Short Circuit Output Current
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Symbol
Min
Typ
Max
Units
Supply Voltage
Parameter
VCC
3.0
3.3
3.6
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.0
-
Vcc+0.3*1
V
Input Low Voltage
VIL
-0.3 *2
-
0.8
V
*1 : Vcc+1.3V at pulse width≤15ns which is measured at VCC
*2 : -1.3 at pulse width≤15ns which is measured at V SS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT ≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH =-2mA)
VOH
2.4
-
V
Output Low Voltage Level(I OL=2mA)
VOL
-
0.4
V
K4E661612C,K4E641612C
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Max
Speed
Units
K4E661612C
K4E641612C
ICC1
Don′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC2
Normal
L
Don′t care
1
1
1
1
mA
mA
ICC3
Don′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC4
Don′t care
-45
-50
-60
100
90
80
100
90
80
mA
mA
mA
ICC5
Normal
L
Don′t care
0.5
200
0.5
200
mA
uA
ICC6
Don′t care
-45
-50
-60
130
120
110
130
120
110
mA
mA
mA
ICC7
L
Don′t care
350
350
uA
ICCS
L
Don′t care
350
350
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC =min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=V CC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH , Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V CC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note :
ICC1 , ICC3, ICC4 and I CC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In I CC4,
address can be changed maximum once within one EDO mode cycle time, tHPC .
K4E661612C,K4E641612C
CMOS DRAM
CAPACITANCE (TA=25°C, V CC=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
CIN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C DQ
-
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
-45
Symbol
Min
Random read or write cycle time
tRC
74
101
Read-modify-write cycle time
tRWC
Access time from RAS
-50
Max
Min
-60
Max
84
Min
Max
104
113
Unit
s
Note
ns
138
ns
tRAC
45
50
60
ns
3,4,10
Access time from CAS
tCAC
12
13
15
ns
3,4,5
Access time from column address
tAA
23
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
3
Output buffer turn-off delay from CAS
tCEZ
3
OE to output in Low-Z
tOLZ
3
Transition time (rise and fall)
tT
1
3
13
3
3
13
3
50
1
3
13
3
50
1
50
ns
3
ns
6,20
ns
3
ns
2
RAS precharge time
tRP
25
RAS pulse width
tRAS
45
RAS hold time
tRSH
8
8
10
ns
CAS hold time
tCSH
35
38
40
ns
CAS pulse width
tCAS
7
5K
8
10K
10
10K
ns
RAS to CAS delay time
tRCD
11
33
11
37
14
45
ns
4
RAS to column address delay time
tRAD
9
22
9
25
12
30
ns
10
CAS to RAS precharge time
tCRP
5
5
5
ns
Row address set-up time
tASR
0
0
0
ns
Row address hold time
tRAH
7
7
10
ns
Column address set-up time
tASC
0
0
0
ns
13
Column address hold time
tCAH
7
7
10
ns
13
Column address to RAS lead time
tRAL
23
25
30
ns
Read command set-up time
tRCS
0
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
0
ns
8
Write command hold time
30
10K
50
40
10K
60
ns
10K
ns
tWCH
7
7
10
ns
Write command pulse width
tWP
6
7
10
ns
Write command to RAS lead time
tRWL
8
8
10
ns
Write command to CAS lead time
tCWL
7
7
10
ns
16
Data set-up time
tDS
0
0
0
ns
9,19
K4E661612C,K4E641612C
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
-45
Symbol
Min
-50
Max
7
Min
-60
Max
7
Min
Units
Note
ns
9,19
Max
Data hold time
tDH
10
Refresh period (Normal)
tREF
64
64
64
ms
Refresh period (L-ver)
tREF
128
128
128
ms
Write command set-up time
tWCS
0
0
0
ns
7
CAS to W delay time
tCWD
24
27
32
ns
7,15
RAS to W delay time
tRWD
57
64
77
ns
7
Column address to W delay time
tAWD
35
39
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
5
ns
Access time from CAS precharge
tCPA
ns
3
Hyper Page cycle time
tHPC
17
20
25
ns
21
Hyper Page read-modify-write cycle time
tHPRWC
47
47
56
ns
21
CAS precharge time (Hyper page cycle)
tCP
6.5
ns
14
RAS pulse width (Hyper page cycle)
tRASP
45
RAS hold time from CAS precharge
tRHCP
24
24
OE access time
tOEA
OE to data delay
tOED
8
28
7
200K
50
10
200K
30
12
35
60
200K
35
13
10
ns
ns
15
13
ns
ns
CAS precharge to W delay time
tCPWD
36
Output buffer turn off delay time from OE
tOEZ
3
OE command hold time
tOEH
5
5
5
ns
41
11
3
52
13
3
3
ns
13
ns
6
Write command set-up time (Test mode in)
tWTS
10
10
10
ns
11
Write command hold time (Test mode in)
tWTH
10
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
tWRP
10
10
10
ns
W to RAS hold time (C-B-R refresh)
tWRH
10
10
10
ns
Output data hold time
tDOH
4
5
5
ns
Output buffer turn off delay from RAS
tREZ
3
13
Output buffer turn off delay from W
tWEZ
3
13
W to data delay
tWED
8
15
15
ns
OE to CAS hold time
3
13
3
13
3
13
ns
6,20
3
13
ns
6
tOCH
5
5
5
ns
CAS hold time to OE
tCHO
5
5
5
ns
OE precharge time
tOEP
5
5
5
ns
W pulse width (Hyper Page Cycle)
tWPE
5
5
5
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
22,23,24
RAS precharge time (C-B-R self refresh)
tRPS
74
90
110
ns
22,23,24
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
22,23,24
K4E661612C,K4E641612C
CMOS DRAM
TEST MODE CYCLE
Parameter
( Note 11 )
-45
Symbol
Min
-50
Max
Min
-60
Max
Min
Units
Note
Max
Random read or write cycle time
tRC
79
89
109
ns
Read-modify-write cycle time
tRWC
110
121
145
ns
Access time from RAS
tRAC
50
55
65
ns
3,4,10,12
Access time from CAS
tCAC
17
18
20
ns
3,4,5,12
Access time from column address
tAA
28
30
35
ns
3,10,12
RAS pulse width
tRAS
50
10K
55
10K
65
10K
ns
CAS pulse width
tCAS
12
10K
13
10K
15
10K
ns
RAS hold time
tRSH
18
18
20
ns
CAS hold time
tCSH
39
43
50
ns
Column Address to RAS lead time
tRAL
28
30
35
ns
CAS to W delay time
tCWD
29
35
39
ns
7
RAS to W delay time
tRWD
62
72
84
ns
7
Column Address to W delay time
tAWD
40
47
54
ns
7
Hyper Page cycle time
tHPC
22
25
30
ns
21
Hyper Page read-modify-write cycle time
ns
21
tHPRWC
52
RAS pulse width (Hyper page cycle)
tRASP
50
53
Access time from CAS precharge
tCPA
29
OE access time
tOEA
17
OE to data delay
tOED
13
18
20
ns
OE command hold time
tOEH
13
18
20
ns
200K
55
61
200K
65
200K
ns
33
40
ns
3
18
20
ns
3
K4E661612C,K4E641612C
CMOS DRAM
NOTES
1. An initial pause of 200us is required after power-up followed by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
2. Input voltage levels are Vih/Vil. V IH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition
times are measured between V IH(min) and V IL(max) and are assumed to be 2ns for all inputs.
3. Measured with a load equivalent to 1 TTL load and 100pF.
4. Operation within the tRCD(max) limit insures that tRAC (max) can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5. Assumes that tRCD≥tRCD(max).
6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V oh or V ol.
7. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electric characteristics only. If tWCS≥tWCS(min), the cycles is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD≥tCWD(min), tRWD≥tRWD(min) and tAWD≥tAWD (min), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. This parameters are referenced to the CAS leading edge in early write cycles and to the W falling edge in OE controlled write
cycle and read-modify-write cycles.
10. Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD(max) is specified as a reference point only. If
tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
11. These specifiecations are applied in the test mode.
12. In test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
13. tASC, tCAH are referenced to the earlier CAS falling edge.
14. tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
15. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
K4E64(6)1612C Truth Table
RAS
LCAS
UCAS
W
OE
DQ0 - DQ7
DQ8-DQ15
STATE
H
X
X
X
X
Hi-Z
Hi-Z
Standby
L
H
H
X
X
Hi-Z
Hi-Z
Refresh
L
L
H
H
L
DQ-OUT
Hi-Z
Byte Read
L
H
L
H
L
Hi-Z
DQ-OUT
Byte Read
L
L
L
H
L
DQ-OUT
DQ-OUT
Word Read
L
L
H
L
H
DQ-IN
-
Byte Write
L
H
L
L
H
-
DQ-IN
Byte Write
L
L
L
L
H
DQ-IN
DQ-IN
Word Write
L
L
L
H
H
Hi-Z
Hi-Z
-
K4E661612C,K4E641612C
CMOS DRAM
16. tCWL is specified from W falling edge to the earlier CAS rising edge.
17. tCSR is referenced to earlier CAS falling before RAS transition low.
18. tCHR is referenced to the later CAS rising high after RAS transition low.
RAS
LCAS
UCAS
tCSR
tCHR
19. tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge in early write cycle.
LCAS
UCAS
tDS
DQ0 ~ DQ15
tDH
Din
20. If RAS goes high before CAS high going, the open circuit condition of the output is achieved by CAS high going.
21. tASC≥6ns, Assume tT=2.0ns, if tASC≤6ns, then tHPC(min) and t CAS(min) must be increased by the value of "6ns-tASC".
22. If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.
23. For RAS-only-Refresh and Burst CAS-before-RAS refresh mode, 4096 cycles(4K/8K) of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
24. For distributed CAS-before-RAS with 15.6us interval, CBR refresh should be executed with in 15.6us immediately before and
after self refresh in order to meet refresh specification.
K4E661612C,K4E641612C
CMOS DRAM
WORD READ CYCLE
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
tCRP
tRSH
VIH -
tCAS
VIL -
tCSH
tCRP
LCAS
tRP
VIH -
tRCD
tCRP
tRSH
tCAS
VIH VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tASC
tRAL
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tAA
tOLZ
OE
VIH -
tOEA
VIL -
DQ0 ~ DQ7
VOH VOL -
tRAC
tCAC
tCLZ
OPEN
tCEZ
tOEZ
DATA-OUT
tCAC
DQ8 ~ DQ15
VOH VOL -
tRAC
OPEN
tCLZ
tCEZ
tOEZ
DATA-OUT
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
tRC
tRAS
RAS
tRP
VIH VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCSH
tCRP
LCAS
tRSH
tCAS
VIH VIL -
tRAD
tASR
A
tRCD
VIH VIL -
tRAH
tASC
tRAL
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tCEZ
tAA
OE
VIH -
tOEA
VIL -
DQ0 ~ DQ7
VOH VOL -
tOEZ
tRAC
tCAC
tCLZ
OPEN
DATA-OUT
tOLZ
DQ8 ~ DQ15
VOH VOL -
OPEN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
UPPER BYTE READ CYCLE
NOTE : DIN = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRP
VIH -
tRCD
VIH -
tCAS
VIL -
tCRP
LCAS
tCRP
tRSH
tRPC
VIH VIL -
tRAD
tRAL
tASR
A
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tCEZ
tAA
OE
VIH -
tOEZ
tOEA
VIL -
tOLZ
DQ0 ~ DQ7
VOH -
OPEN
tCAC
VOL DQ8 ~ DQ15
VOH VOL -
tRAC
OPEN
tCLZ
DATA-OUT
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
tCAS
tCSH
tRCD
tRSH
tCAS
VIH VIL -
VIH VIL -
OE
tCRP
tRAD
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWCS
W
tCRP
VIL -
tASR
A
tRSH
VIH -
tCRP
LCAS
tRP
VIH -
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH -
tDS
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
DATA-IN
VIL -
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
tRP
VIH VIL -
tCRP
UCAS
VIH VIL -
tCSH
tCRP
LCAS
tRCD
tRSH
tCAS
VIH -
tCRP
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tRAL
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
tDS
tDH
DATA-IN
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tCRP
LCAS
VIH VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
DQ8 ~ DQ15
VIH VIL -
tDS
tDH
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
WORD WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
tCRP
tCAS
VIL -
tCSH
tRCD
tRSH
tCAS
VIH VIL -
VIH VIL -
tCRP
tRAD
tASR
A
tRSH
VIH -
tCRP
LCAS
tRP
VIH -
tRAH
tRAL
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tCWL
tRWL
W
OE
VIH -
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH -
tOEH
tOED
tDS
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
DATA-IN
VIL -
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
tRP
VIH VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCSH
tCRP
LCAS
tRCD
tRSH
tCAS
VIH -
tCRP
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tCWL
tRWL
W
OE
tWP
VIH VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
tOEH
tOED
tDS
tDH
DATA-IN
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRP
VIH -
tRCD
VIH VIL -
tCRP
LCAS
W
OE
tCRP
VIH VIL -
tRAD
tASR
A
tCRP
tRSH
tCAS
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tCWL
tRWL
VIH -
tWP
VIL -
VIH VIL -
tOEH
tOED
DQ0 ~ DQ7
VIH VIL -
DQ8 ~ DQ15
VIH VIL -
tDS
tDH
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
WORD READ - MODIFY - WRITE CYCLE
tRWC
tRAS
RAS
UCAS
LCAS
tRP
VIH VIL -
tCRP
tRCD
tRSH
tCAS
tCRP
tRCD
tRSH
VIH VIL -
VIH -
tCAS
VIL -
tRAD
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR.
tASC
tCAH
COLUMN
ADDRESS
tAWD
tRWL
tCWD
W
OE
tCWL
VIH -
tWP
VIL -
tRWD
tOEA
VIH VIL -
tOLZ
tCLZ
tCAC
tAA
DQ0 ~ DQ7
VI/OH -
tOED
tOEZ
tRAC
VALID
DATA-OUT
VI/OL -
tDS
tDH
VALID
DATA-IN
tOLZ
tCLZ
tCAC
tAA
DQ8 ~ DQ15
VI/OH VI/OL -
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
LOWER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRAS
RAS
tRP
VIH VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCRP
LCAS
tRCD
tRSH
VIH -
tCAS
VIL -
tRAD
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR.
tASC
tCAH
COLUMN
ADDRESS
tAWD
tRWL
tCWD
W
OE
tCWL
VIH -
tWP
VIL -
tRWD
tOEA
VIH VIL -
tOLZ
tCLZ
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL DQ8 ~ DQ15
VOH VOL -
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
OPEN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
UPPER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRAS
RAS
VIL -
tCRP
UCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCAS
VIL -
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tAWD
tRWL
tCWD
W
OE
tCWL
VIH VIL VIH -
tWP
tRWD
tOEA
VIL -
DQ0 ~ DQ7
VOH -
OPEN
VOL -
DQ8 ~ DQ15
VI/OH VI/OL -
tOLZ
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE WORD READ CYCLE
tRASP
RAS
tRP
VIH VIL -
tCSH
tCRP
UCAS
tRCD
tCP
tHPC
tCP
tCAS
tCP
tCAS
tCAS
VIL -
tCP
tRCD
VIL -
VIH VIL -
tRAD
tRAH tASC
ROW
ADDR
tCP
tCAS
VIH -
tASR
A
tHPC
tCAS
VIH -
tCRP
LCAS
tRHCP
tHPC
tCAS
tCAH
tASC
COLUMN
ADDRESS
tCAH
tREZ
tCP
tCAS
tASC
COLUMN
ADDRESS
tCAH
COLUMN
ADDR
tCAS
tASC
tCAH
COLUMN
ADDRESS
tRAL
tRCS
W
VIH VIL -
tAA
tAA
tCPA
tOCH
tOEA
VIH -
tCHO
tOEP
tOEA
VIL -
tCAC
DQ0 ~ DQ7
VOH -
tCPA
tCAC
tAA
tCAC
tCPA
tCAC
OE
tRRH
tRCH
tOEP
tDOH
tRAC
VALID
DATA-OUT
VOL -
tOEZ
tOEZ
tOEZ
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
tOLZ
tCLZ
tCAC
DQ8 ~ DQ15
VOH -
tRAC
tOEP
tDOH
VALID
DATA-OUT
VOL -
tOEZ
tOEZ
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
tOLZ
tCLZ
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE LOWER BYTE READ CYCLE
tRP
tRASP
RAS
VIH VIL -
¡ó
tRPC
tCRP
UCAS
VIH -
tCSH
VIL -
tRHCP
tHPC
tCP
tRCD
LCAS
tCP
tCAS
VIH -
tCAS
tHPC
tREZ
tCP
tCAS
tCAS
tCAH tASC
tCAH
VIL -
tASR
A
tHPC
VIH VIL -
tRAD
tRAH tASC
ROW
ADDR
tCAH
COLUMN
ADDRESS
tASC
tCAH
tASC
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRAL
tRCS
W
VIH VIL -
tAA
tCPA
tAA
OE
tRRH
tRCH
tAA
tCPA
tCAC
tOCH
tOEA
VIH -
tCAC
tRAC
VOL -
tOEP
tDOH
VALID
DATA-OUT
VOL -
DQ8 ~ DQ15
VOH -
tCHO
tOEP
tOEA
VIL -
DQ0 ~ DQ7
VOH -
tCPA
tCAC
tAA
tCAC
tOEZ
tOEZ
tOEZ
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
tOLZ
tCLZ
OPEN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE UPPER BYTE READ CYCLE
tRASP
RAS
tRP
VIH VIL -
¡ó
tCSH
tCRP
UCAS
tRHCP
tHPC
tRCD
tCP
tCAS
VIH -
tHPC
tHPC
tCP
tCAS
tCP
tRPC
tCAS
tCAS
VIL -
tCRP
LCAS
VIL -
tASR
A
tRPC
VIH -
VIH VIL -
tRAD
tRAH tASC
ROW
ADDR.
tCAH
tASC
COLUMN
ADDRESS
tCAH
tASC
COLUMN
ADDRESS
tCAH
COLUMN
ADDR.
tASC
tCAH
tREZ
COLUMN
ADDRESS
tRAL
tRCS
W
VIH VIL -
tAA
tCPA
tOCH
tOEA
VIH -
tCHO
tOEP
tOEA
VIL -
DQ0 ~ DQ7
VOH -
OPEN
VOL -
tCAC
DQ8 ~ DQ15
VOH -
tCPA
tCAC
tAA
tCAC
tAA
tCPA
tCAC
OE
tRRH
tRCH
tRAC
tOEP
tDOH
VALID
DATA-OUT
VOL -
tOEZ
tOEZ
tOEZ
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
tOLZ
tCLZ
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
RAS
tRHCP
VIL -
¡ó
tHPC
tCRP
UCAS
tHPC
tCP
tRCD
VIH -
tRSH
tCP
tCAS
tCRP
tCAS
VIL -
tCAS
¡ó
tHPC
tCRP
LCAS
tRP
VIH -
tHPC
tCP
tRCD
VIH -
tRSH
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tWCS
W
OE
tASC
tWCH
COLUMN
ADDRESS
tWCS
tWP
VIH -
tCAH
tASC
¡ó
¡ó
tWCH
tWP
tCAH
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
VIH -
¡ó
VIL -
¡ó
DQ0 ~ DQ7
VIH -
tDS
VIL -
tDS
tDH
tDS
tDH
¡ó
VALID
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
VALID
DATA-IN
tDS
¡ó
tDH
VALID
DATA-IN
tDS
tDH
¡ó
VALID
DATA-IN
VALID
DATA-IN
¡ó
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
RAS
tRP
VIH -
tRHCP
VIL -
¡ó
tRPC
tCRP
UCAS
VIH VIL -
tHPC
tCRP
LCAS
tRCD
tHPC
tCP
VIH -
tRSH
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tCAH
tASC
OE
VIH -
tWCH
tWCS
tWP
tASC
tCAH
COLUMN
ADDRESS
COLUMN
ADDRESS
tWCS
W
tASC
¡ó
¡ó
tWCH
tWP
tCAH
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
VIH -
¡ó
VIL -
¡ó
DQ0 ~ DQ7
VIH VIL -
tDS
tDH
tDS
tDH
tDS
tDH
¡ó
VALID
DATA-IN
VALID
DATA-IN
¡ó
VALID
DATA-IN
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
RAS
tRHCP
VIL -
¡ó
tHPC
tCRP
UCAS
tRP
VIH -
tRCD
tHPC
tCP
VIH -
tRSH
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
OE
VIH -
tWCH
tCAH
COLUMN
ADDRESS
COLUMN
ADDRESS
tWCS
W
tASC
tWCS
tWP
tASC
¡ó
¡ó
tWCH
tWP
tCAH
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
¡ó
VIH VIL -
¡ó
DQ0 ~ DQ7
VIH -
¡ó
VIL -
DQ8 ~ DQ15
VIH VIL -
¡ó
tDS
tDH
tDS
tDH
tDS
tDH
¡ó
VALID
DATA-IN
VALID
DATA-IN
¡ó
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
tRP
tRASP
RAS
VIH -
tCSH
VIL -
tCRP
UCAS
tRSH
tRCD
tCRP
tCP
VIH -
tCAS
tCAS
VIL -
tCRP
LCAS
tHPRWC
tRCD
tCRP
tCP
VIH -
tCAS
tCAS
VIL -
tRAD
tRAH
tASR
A
VIH VIL -
tRAL
tCAH
tASC
ROW
ADDR
COL.
ADDR
COL.
ADDR
tRCS
W
tCAH
tASC
tCWL
VIH -
tWP
VIL -
tWP
tCWD
tCWD
tAWD
tRWD
OE
tRWL
tCWL
tRCS
VIH -
tAWD
tCPWD
tOEA
tOEA
VIL -
tOED
tOED
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL -
tDH
tCAC
tAA
tDS
tOEZ
tDH
tRAC
tCLZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
tOED
tCAC
tAA
DQ8 ~ DQ15
VI/OH VI/OL -
tDS
tOEZ
tDH
tOEZ
tOED
tCAC
tAA
tDS
VALID
DATA-IN
tDH
tOEZ
tDS
tRAC
tCLZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE
tRP
tRASP
RAS
VIH -
tCSH
tHPRWC
VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCRP
LCAS
tRSH
tCP
tRCD
VIH -
tCAS
VIL -
tRAD
tRAH
tASR
A
VIH VIL -
ROW
ADDR
tRAL
tCAH
tASC
tCAH
tASC
COL.
ADDR
COL.
ADDR
tRCS
W
tRWL
tCWL
tRCS
tCWL
VIH -
tWP
VIL -
tWP
tCWD
tCWD
tAWD
tCPWD
tAWD
tRWD
OE
tCRP
tCAS
VIH -
tOEA
tOEA
VIL -
tOED
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL -
tOEZ
tRAC
VI/OL -
tDH
tDH
tAA
tDS
tDS
tCLZ
tOEZ
tCLZ
tOLZ
DQ8 ~ DQ15
VI/OH -
tOED
tCAC
VALID
DATA-OUT
VALID
DATA-IN
tOLZ
VALID
DATA-OUT
VALID
DATA-IN
OPEN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
tRP
tRASP
RAS
VIH -
tCSH
tCRP
UCAS
tHPRWC
VIL -
tRSH
tCP
tRCD
VIH -
tCAS
tCRP
tCAS
VIL -
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tRAH
tASR
A
VIH VIL -
ROW
ADDR
tCAH
tASC
COL.
ADDR
tRWL
tCWL
tRCS
tCWL
VIH -
tWP
VIL -
tWP
tCWD
tCWD
tAWD
tAWD
tRWD
OE
tRAL
COL.
ADDR
tRCS
W
tCAH
tASC
VIH -
tCPWD
tOEA
tOEA
VIL -
DQ0 ~ DQ7
VI/OH -
OPEN
VI/OL -
tOLZ
tOLZ
tOED
tAA
DQ8 ~ DQ15
VI/OH VI/OL -
tRAC
tOED
tCAC
tCAC
tOEZ
tDS
tCLZ
tDH
tAA
tDH
tDS
tOEZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HYPER PAGE READ AND WRITE MIXED CYCLE
tRP
tRASP
RAS
VIH -
READ(t CAC)
READ(tCPA )
tHPC
VIH -
tCP
tCP
tCAS
tRCD
VIL -
tCAS
tHPC
tHPC
VIH VIL -
tCP
tASR
A
VIH VIL -
tRAH
tASC
ROW
ADDR
tCAH
COLUMN
ADDRESS
tCAH
tASC
tCP
tASC
COLUMN
ADDRESS
tCAH
COL.
ADDR
tHPC
tCAS
tCAS
tCAS
tCAS
tRAD
tCAS
tCAS
tCP
LCAS
tRHCP
tHPC
tHPC
tCP
UCAS
READ( tAA)
WRITE
VIL -
tASC
tCAH
COL.
ADDR
tRAL
tRCS
W
tRCH
tRCS
tRCH
tWCH
tRCH
tWCS
VIH VIL -
tWPE
tCLZ
tCPA
OE
tWED
VIH VIL -
DQ0 ~ DQ7
VI/OH -
tOEA
tCAC
tAA
VI/OL -
tWEZ
tDH
tDS
tAA
tREZ
tRAC
VALID
DATA-OUT
VI/OL -
DQ8 ~ DQ15
VI/OH -
tWEZ
tOEA
tCAC
tAA
tWEZ
VALID
DATA-OUT
tWEZ
VALID
DATA-IN
tDH
tDS
VALID
DATA-OUT
tAA
tREZ
tRAC
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
RAS - ONLY REFRESH CYCLE
NOTE : W, OE , DIN = Don′t care
DOUT = OPEN
tRC
VIH -
RAS
tRP
tRAS
VIL -
tRPC
tCRP
VIH -
UCAS
VIL -
tCRP
VIH -
LCAS
VIL -
tASR
VIH -
A
VIL -
tRAH
ROW
ADDR
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don′t care
tRC
tRP
RAS
VIL -
tRP
tRAS
VIH -
tRPC
tRPC
tCP
UCAS
tCSR
VIH -
tCHR
VIL -
tCP
LCAS
tCSR
VIH -
tCHR
VIL -
DQ0 ~ DQ7
VOH -
tCEZ
OPEN
VOL DQ8 ~ DQ15
VOH VOL -
W
OPEN
tWRP
tWRH
VIH VIL Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
HIDDEN REFRESH CYCLE ( READ )
tRC
RAS
tRAS
VIH -
tRSH
tCHR
tRCD
tRSH
tCHR
VIL -
VIH VIL -
tRAD
tASR
A
tRCD
VIH -
tCRP
LCAS
VIH VIL -
tRAH
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tWRH
tRCS
W
tRP
tRAS
VIL -
tCRP
UCAS
tRC
tRP
VIH VIL -
tRAL
tAA
OE
VIH -
tOEA
VIL -
tCEZ
tREZ
tCAC
tCLZ
DQ0 ~ DQ7
VOH VOL -
DQ8 ~ DQ15
VOH VOL -
tRAC
tWEZ
tOLZ
tOEZ
OPEN
DATA-OUT
OPEN
DATA-IN
DATA-OUT
Don′t care
Undefined
* In Hidden refresh cycle of 64Mb A-die & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
K4E661612C,K4E641612C
CMOS DRAM
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : D OUT = OPEN
tRC
RAS
tRAS
VIH -
tRSH
tCHR
tRCD
tRSH
tCHR
VIL -
VIH VIL -
tRAD
tASR
A
tRCD
VIH -
tCRP
LCAS
tRP
tRAS
VIL -
tCRP
UCAS
tRC
tRP
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWRH
tWRP
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
tDS
DQ0 ~ DQ7
VIH -
DATA-IN
VIL -
tDS
DQ8 ~ DQ15
VIH VIL -
tDH
tDH
DATA-IN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE , A = Don′t care
tRP
tRASS
tRPS
VIH -
RAS
VIL -
tRPC
tRPC
tCP
UCAS
VIH -
tCHS
tCSR
tCHS
VIL -
tCP
LCAS
tCSR
VIH VIL -
DQ0 ~ DQ7
VOH -
tCEZ
OPEN
VOL DQ8 ~ DQ15
VOH -
OPEN
VOL -
W
tWRP
tWRH
VIH VIL -
TEST MODE IN CYCLE
NOTE : OE , A = Don′t care
tRC
tRP
RAS
VIL -
tRP
tRAS
VIH -
tRPC
tRPC
tCP
UCAS
tCSR
VIH -
tCP
LCAS
W
tCHR
VIL -
tCSR
VIH -
tCHR
VIL -
VIL -
tWTS
tWTH
VIH -
DQ0 ~ DQ15
VOH VOL -
tCEZ
OPEN
Don′t care
Undefined
K4E661612C,K4E641612C
CMOS DRAM
PACKAGE DIMENSION
50 TSOP(II) 400mil
0.400 (10.16)
0.455 (11.56)
0.471 (11.96)
Units : Inches (millimeters)
0.004 (0.10)
0.010 (0.25)
0.841 (21.35)
MAX
0.821 (20.85)
0.829 (21.05)
0.034 (0.875)
0.0315 (0.80)
0.047 (1.20)
MAX
0.002 (0.05)
MIN
0.010 (0.25)
0.018 (0.45)
0.010 (0.25)
TYP
0.018 (0.45)
0.030 (0.75)
0~8
O
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