LT6210/LT6211 Single/Dual Programmable Supply Current, R-R Output, Current Feedback Amplifiers U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Programmable Supply Current and Bandwidth: 10MHz at 300µA per Amplifier up to 200MHz at 6mA per Amplifier Rail-to-Rail Output: 0.05V to 2.85V on 3V Single Supply High Slew Rate: 700V/µs High Output Drive: ±75mA Minimum Output Current C-LoadTM Op Amp Drives All Capacitive Loads Low Distortion: –70dB HD2 at 1MHz 2VP-P –75dB HD3 at 1MHz 2VP-P Fast Settling: 20ns 0.1% Settling for 2V Step Excellent Video Performance Into 150Ω Load: Differential Gain of 0.20%, Differential Phase of 0.10° Wide Supply Range: 3V to 12V Single Supply ±1.5V to ±6V Dual Supplies Small Size: Low Profile (1mm) 6-Lead SOT-23 (ThinSOTTM), 3mm x 3mm x 0.8mm DFN and 10-Lead MSOP Packages , LTC and LT are registered trademarks of Linear Technology Corporation. C-Load and ThinSOT are trademarks of Linear Technology Corporation. The LT®6210/LT6211 are single/dual current feedback amplifiers with externally programmable supply current and bandwidth ranging from 10MHz at 300µA per amplifier to 200MHz at 6mA per amplifier. They feature a low distortion rail-to-rail output stage, 700V/µs slew rate and a minimum output current drive of 75mA. The LT6210/LT6211 operate on supplies as low as a single 3V and up to either 12V or ±6V. The ISET pin allows for the optimization of quiescent current for specific bandwidth, distortion or slew rate requirements. Regardless of supply voltage, the supply current is programmable from just 300µA to 6mA per amplifier with an external resistor or current source. The LT6210 is available in the low profile (1mm) 6-lead SOT-23 package. The LT6211 is available in the 10-lead MSOP and the 3mm x 3mm x 0.8mm DFN packages. U APPLICATIO S ■ ■ ■ ■ ■ Buffers Video Amplifers Cable Drivers Mobile Communication Low Power/Battery Applications U TYPICAL APPLICATIO Small Signal Response vs Supply Current 3 9 Line Driver Configuration for Various Supply Currents 5V 6 + 1 LT6210 4 75Ω 75Ω CABLE VOUT 5 – 2 75Ω RSET –5V RF RG IS 6mA 3mA 300µA RSET 20k 56k 1M RG 887Ω 1.1k 11k RF 887Ω 1.1k 11k RLOAD 150Ω 150Ω 1k 6210 TA01 6 IS = 6mA IS = 300µA 3 –3 –6 0 –3 0 VS = ±5V AV = 2 TA = 25°C VOUT = 100mVP-P –6 0.1 1 10 100 FREQUENCY (MHz) GAIN AT VOUT (dB) VIN 3 GAIN AT LT6210 OUTPUT (dB) IS = 3mA –9 –12 1000 6210 TA01b 62101f 1 LT6210/LT6211 W W W AXI U U ABSOLUTE RATI GS (Note 1) Total Supply Voltage (V+ to V–) ........................... 13.2V Input Current ................................................. ±10mA Output Current .............................................. ±80mA Output Short-Circuit Duration (Note 2) ........... Indefinite Operating Temperature Range (Note 3) ... –40°C to 85°C Specified Temperature Range (Note 4) .... –40°C to 85°C Junction Temperature (Note 5) ............................ 150°C Junction Temperature (DD Package) ................... 125°C Storage Temperature Range ................. –65°C to 150°C Storage Temperature Range (DD Package) ................................... –65°C to 125°C Lead Temperature (Soldering, 10 sec)................. 300°C U U W PACKAGE/ORDER I FOR ATIO TOP VIEW TOP VIEW 6 V+ OUT 1 V– 2 +IN 3 5 ISET + – 4 –IN S6 PACKAGE 6-LEAD PLASTIC SOT-23 TJMAX = 150°C, θJA = 230°C/ W (NOTE 5) OUT A 1 –IN A 2 +IN A 3 ISET A 4 – 5 V 10 V + – + 9 OUT B – + 8 –IN B 7 +IN B 6 ISET B DD PACKAGE 10-LEAD (3mm × 3mm) PLASTIC DFN UNDERSIDE METAL CONNECTED TO V – (PCB CONNECTION OPTIONAL) TJMAX = 125°C, θJA = 43°C/ W (NOTE 5) TOP VIEW OUT A –IN A +IN A ISET A V– 1 2 3 4 5 – + – + 10 9 8 7 6 V+ OUT B –IN B +IN B ISET B MS PACKAGE 10-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 120°C/ W (NOTE 5) ORDER PART NUMBER S6 PART MARKING* ORDER PART NUMBER DD PART MARKING* ORDER PART NUMBER MS PART MARKING LT6210CS6 LT6210IS6 LTA3 LT6211CDD LT6211IDD LBCD LT6211CMS LT6211IMS LTBBN LTBBP *The temperature grades are identified by a label on the shipping container. Consult LTC Marketing for parts specified with wider operating temperature ranges. 62101f 2 LT6210/LT6211 ELECTRICAL CHARACTERISTICS (IS = 6mA per Amplifier) The ● denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V+ = 5V, V– = – 5V: RSET = 20k to ground, AV = +2, RF = RG = 887Ω, RL = 150Ω; For V+ = 3V, V– = 0V: RSET = 0Ω to V–, AV = +2, RF = 887Ω, RG = 887Ω to 1.5V, RL = 150Ω to 1.5V unless otherwise specified. SYMBOL PARAMETER VOS V+ = 5V, V– = –5V, IS = 6mA V+ = 3V, V– = 0V, IS = 6mA MIN TYP MAX MIN TYP MAX CONDITIONS Input Offset Voltage –1 ±6 ±9 –1 ±6.5 ±10 mV mV –3.5 ±7 ±9 –3 ±6.5 ±8 µA µA –13.5 ±39 ±55 2.5 ±25 ±40 µA µA ● IIN+ Noninverting Input Current ● IIN – Inverting Input Current UNITS ● en Input Noise Voltage Density f = 1kHz, RF = 887Ω, RG = 46.4Ω, RS = 0Ω 6.5 6.5 nV/√Hz +in Input Noise Current Density f = 1kHz 4.5 4.5 pA/√Hz –in Input Noise Current Density f = 1kHz RIN+ Noninverting Input Resistance VIN = V + – 1.2V to V – + 1.2V 25 ● 0.5 2 3.8 4.2 CIN+ Noninverting Input Capacitance f = 100kHz VINH Input Voltage Range, High (Note 10) ● VINL Input Voltage Range, Low (Note 10) ● VOUTH Output Voltage Swing, High RL = 1k (Note 11) RL = 150Ω (Note 11) RL = 150Ω (Note 11) VOUTL CMRR Output Voltage Swing, Low RL = 1k (Note 11) RL = 150Ω (Note 11) RL = 150Ω (Note 11) ● VIN = V + – 1.2V to V – + 1.2V PSRR Power Supply Rejection Ratio VS = ±1.5V to ±6V (Note 6) –IPSRR Inverting Input Current Power Supply Rejection VS = ±1.5V to ±6V (Note 6) IS –4.2 4.4 4.2 MΩ 2 pF 1.8 2.2 V ● 46 43 0.15 60 ● 2.65 2.6 ±1.5 ±2 60 1.2 2.85 2.75 0.05 0.1 –4.55 –4.4 85 V V V V 0.3 0.35 V V V 46 dB dB 0.2 µA/V µA/V 85 dB 2 ±7 ±8 2 ±7 ±8 µA/V µA/V 6 8.5 10 5.8 8.3 9 mA mA ● Supply Current per Amplifier 0.8 50 ● ● –3.8 4.8 4.6 –4.95 –4.8 Common Mode Rejection Ratio VIN = V + – 1.2V to V – + 1.2V Inverting Input Current Common Mode Rejection pA/√Hz 1.7 2 ● –ICMRR 25 0.3 62101f 3 LT6210/LT6211 ELECTRICAL CHARACTERISTICS (IS = 6mA per Amplifier) The +● denotes– specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V = 5V, V = – 5V: RSET = 20k to ground, AV = +2, RF = RG = 887Ω, RL = 150Ω; For V+ = 3V, V– = 0V: RSET = 0Ω to V–, AV = +2, RF = 887Ω, RG = 887Ω to 1.5V, RL = 150Ω to 1.5V unless otherwise specified. V+ = 5V, V– = –5V, IS = 6mA MIN SYMBOL PARAMETER CONDITIONS IOUT Maximum Output Current RL = 0Ω (Notes 7, 11) ROL Transimpedance, ∆VOUT/∆IIN – VOUT = V+ – 1.2V to V – + 1.2V 65 115 115 kΩ SR Slew Rate (Note 8) 500 700 200 V/µs tpd Propagation Delay 50% VIN to 50% VOUT, 100mVP-P, Larger of tpd +, tpd – 1.5 2.4 ns ● TYP V+ = 3V, V– = 0V, IS = 6mA MAX MIN ±75 TYP MAX ±45 65 UNITS mA BW –3dB Bandwidth <1dB Peaking, AV = 1 200 120 MHz ts Settling Time To 0.1% of VFINAL, VSTEP = 2V 20 25 ns tf, tr Small-Signal Rise and Fall Time 10% to 90%, VOUT = 100mVP-P 2 3.5 ns dG Differential Gain (Note 9) 0.20 0.35 % dP Differential Phase (Note 9) 0.10 0.20 Deg HD2 2nd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –70 –65 dBc HD3 3rd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –75 –75 dBc (IS = 3mA per Amplifier) The ● denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V + = 5V, V – = – 5V: RSET = 56k to ground, AV = +2, RF = RG = 1.1k, RL = 150Ω; For V + = 3V, V – = 0V: RSET = 10k to V –, AV = +2, RF = 1.27k, RG = 1.27k to 1.5V, RL = 150Ω to 1.5V unless otherwise specified. SYMBOL PARAMETER VOS V+ = 5V, V– = –5V, IS = 3mA V+ = 3V, V– = 0V, IS = 3mA MIN TYP MAX MIN TYP MAX CONDITIONS Input Offset Voltage –1 ±5.5 ±8.5 –1.5 ±5.5 ±8.5 mV mV –1.5 ±5 ±7 –1.5 ±5 ±7 µA µA –12 ±36 ±52 –3 ±15 ±20 µA µA ● IIN+ Noninverting Input Current ● IIN – Inverting Input Current ● en Input Noise Voltage Density f = 1kHz, RF = 1.1k, RG = 57.6Ω, RS = 0Ω +in Input Noise Current Density f = 1kHz –in Input Noise Current Density f = 1kHz RIN+ Noninverting Input Resistance VIN = V+ – 1.2V to V – + 1.2V CIN+ Noninverting Input Capacitance f = 100kHz VINH Input Voltage Range, High (Note 10) ● VINL Input Voltage Range, Low (Note 10) ● VOUTH Output Voltage Swing, High RL = 1k (Note 11) RL = 150Ω (Note 11) RL = 150Ω (Note 11) VOUTL CMRR Output Voltage Swing, Low RL = 1k (Note 11) RL = 150Ω (Note 11) RL = 150Ω (Note 11) Common Mode Rejection Ratio VIN Inverting Input Current Common Mode Rejection 7 nV/√Hz 1.5 1.5 pA/√Hz 0.5 3 1 2 ● 3.8 4.1 –4.1 4.3 4.1 ● = V+ – 1.2V to V – + 1.2V VIN = V+ – 1.2V to V – + 1.2V 46 43 –4.55 –4.4 ±1.5 ±2 15 pA/√Hz 2.5 MΩ 2 pF 2.1 0.9 2.6 2.55 50 0.3 ● 1.8 –3.8 4.8 4.6 –4.95 –4.8 ● –ICMRR 7 15 ● UNITS V 1.2 2.9 2.8 0.05 0.1 V V V V 0.3 0.35 V V V 46 dB dB 0.4 µA/V µA/V 62101f 4 LT6210/LT6211 ELECTRICAL CHARACTERISTICS (IS = 3mA per Amplifier) The ● denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V + = 5V, V – = – 5V: RSET = 56k to ground, AV = +2, RF = RG = 1.1k, RL = 150Ω; For V + = 3V, V – = 0V: RSET = 10k to V –, AV = +2, RF = 1.27k, RG = 1.27k to 1.5V, RL = 150Ω to 1.5V unless otherwise specified. V+ = 5V, V – = –5V, IS = 3mA SYMBOL PARAMETER CONDITIONS PSRR Power Supply Rejection Ratio VS = ±1.5V to ±6V (Note 6) –IPSRR Inverting Input Current Power Supply Rejection VS = ±1.5V to ±6V (Note 6) IS MIN ● 60 TYP 85 60 TYP MAX UNITS 85 dB ±7 ±8 1.5 ±7 ±8 µA/V µA/V 3 4.1 4.55 3 4.1 4.4 mA mA ● ±70 ±45 IOUT Maximum Output Current RL = 0Ω (Notes 7, 11) ROL Transimpedance, ∆VOUT/∆IIN – VOUT = V+ –1.2V to V – +1.2V 65 120 SR Slew Rate (Note 8) 450 tpd Propagation Delay 50% VIN to 50% VOUT, 100mVP-P, Larger of tpd +, tpd – ● MAX MIN 1.5 ● Supply Current per Amplifier V+ = 3V, V – = 0V, IS = 3mA 65 mA 120 kΩ 600 150 V/µs 3.1 4.7 ns BW –3dB Bandwidth <1dB Peaking, AV = 1 100 70 MHz ts Settling Time To 0.1% of VFINAL, VSTEP = 2V 20 25 ns tf, tr Small-Signal Rise and Fall Time 10% to 90%, VOUT = 100mVP-P 3 5.6 ns dG Differential Gain (Note 9) 0.35 0.42 % dP Differential Phase (Note 9) 0.30 0.44 Deg HD2 2nd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –65 –60 dBc HD3 3rd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –65 –65 dBc (IS = 300µA per Amplifier) The ● denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V + = 5V, V – = – 5V: RSET = 1M to ground, AV = +2, RF = RG = 11k, RL = 1k; For V + = 3V, V – = 0V: RSET = 270k to V –, AV = +2, RF = 9.31k, RG = 9.31k to 1.5V, RL = 1k to 1.5V unless otherwise specified. V+ = 5V, V – = –5V, IS = 300µA V+ = 3V, V – = 0V, IS = 300µA SYMBOL PARAMETER VOS CONDITIONS MIN Input Offset Voltage TYP MAX MIN TYP MAX UNITS –1 ±4.5 ±8 –1.5 ±4.5 ±8 mV mV 0.2 ±1 ±2 0.2 ±1 ±1.5 µA µA –3 ±8.5 ±11 –0.5 ±3 ±4.5 µA µA ● IIN+ Noninverting Input Current ● IIN – Inverting Input Current ● en Input Noise Voltage Density f = 1kHz, RF = 13k, RG = 681Ω, RS = 0Ω 13.5 13.5 nV/√Hz +in Input Noise Current Density f = 1kHz 0.75 0.75 pA/√Hz –in Input Noise Current Density f = 1kHz 5 5 pA/√Hz RIN+ Noninverting Input Resistance VIN = V + – 1.2V to V – + 1.2V (Note 8) 1 15 MΩ 2 pF 1.8 2.1 V 2.75 2.7 2.85 ● 1 25 (Note 10) ● 3.8 4.1 ● CIN+ Noninverting Input Capacitance f = 100kHz VINH Input Voltage Range, High VINL Input Voltage Range, Low (Note 10) VOUTH Output Voltage Swing, High RL = 1k (Note 11) 2 ● VOUTL Output Voltage Swing, Low RL = 1k (Note 11) –4.1 4.75 4.7 –4.95 ● –3.8 4.85 –4.85 –4.8 0.9 0.05 1.2 V V V 0.15 0.2 V V 62101f 5 LT6210/LT6211 ELECTRICAL CHARACTERISTICS (IS = 300µA per Amplifier) The ● denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V + = 5V, V – = – 5V: RSET = 1M to ground, AV = +2, RF = RG = 11k, RL = 1k; For V + = 3V, V – = 0V: RSET = 270k to V–, AV = +2, RF = 9.31k, RG = 9.31k to 1.5V, RL = 1k to 1.5V unless otherwise specified. V + = 5V, V– = –5V, IS = 300µA V + = 3V, V– = 0V, IS = 300µA SYMBOL PARAMETER CMRR CONDITIONS Common Mode Rejection Ratio VIN = V + – 1.2V to V – + 1.2V ● Inverting Input Current Common Mode Rejection VIN = V + – 1.2V to V – + 1.2V PSRR Power Supply Rejection Ratio VS = ±1.5V to ±6V (Note 6) –IPSRR Inverting Input Current Power Supply Rejection VS = ±1.5V to ±6V (Note 6) –ICMRR IS MIN TYP 46 43 50 0.15 ● ● 60 60 TYP MAX UNITS 46 dB dB 0.2 µA/V µA/V 85 dB 0.4 ±2.2 ±4 0.4 ±2.2 ±4 µA/V µA/V 0.3 0.525 0.6 0.3 0.38 0.43 mA mA ● ±30 ±10 IOUT Maximum Output Current RL = 0Ω (Notes 7, 11) ROL Transimpedance, ∆VOUT/∆IIN – VOUT = V+ – 1.2V to V– + 1.2V 300 660 SR Slew Rate (Note 8) 120 tpd Propagation Delay BW ● MIN ±1.5 ±2 85 ● Supply Current per Amplifier MAX 120 kΩ 170 20 V/µs 50% VIN to 50% VOUT, 100mVP-P, Larger of tpd +, tpd – 30 50 ns –3dB Bandwidth <1dB Peaking, AV = 1 10 7.5 MHz ts Settling Time To 0.1% of VFINAL, VSTEP = 2V 200 300 ns tf, tr Small-Signal Rise and Fall Time 10% to 90%, VOUT = 100mVP-P 40 50 ns HD2 2nd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –40 –45 dBc HD3 3rd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –45 –45 dBc Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: As long as output current and junction temperature are kept below the absolute maximum ratings, no damage to the part will occur. Depending on the supply voltage, a heat sink may be required. Note 3: The LT6210C/LT6211C is guaranteed functional over the operating temperature range of –40°C to 85°C. Note 4: The LT6210C/LT6211C is guaranteed to meet specified performance from 0°C to 70°C. The LT6210C/LT6211C is designed, characterized and expected to meet specified performance from –40°C and 85°C but is not tested or QA sampled at these temperatures. The LT6210I/ LT6211I is guaranteed to meet specified performance from –40°C to 85°C. Note 5: The LT6210 with no metal connected to the V – pin has a θJA of 230°C/W, however, thermal resistances vary depending upon the amount of PC board metal attached to Pin 2 of the device. With the LT6210 mounted on a 2500mm2 3/32" FR-4 board covered with 2oz copper on both sides and with just 20mm2 of copper attached to Pin 2, θJA drops to 160°C/W. Thermal performance can be improved even further by using a 4-layer board or by attaching more metal area to Pin 2. Thermal resistance of the LT6211 in MSOP-10 is specified for a 2500mm2 3/32" FR-4 board covered with 2oz copper on both sides and with 100mm2 of copper attached to Pin 5. Its performance can also be increased with additional copper much like the LT6210. To achieve the specified θJA of 43°C/W for the LT6211 DFN-10, the exposed pad must be soldered to the PCB. In this package, θJA will benefit from increased copper area attached to the exposed pad. 65 mA TJ is calculated from the ambient temperature TA and the power dissipation PD according to the following formula: TJ = TA + (PD • θJA) The maximum power dissipation can be calculated by: PD(MAX) = (VS • IS(MAX)) + (VS/2)2/RLOAD Note 6: For PSRR and –IPSRR testing, the current into the ISET pin is constant, maintaining a consistent LT6210/LT6211 quiescent bias point. A graph of PSRR vs Frequency is included in the Typical Performance Characteristics showing +PSRR and –PSRR with RSET connecting ISET to ground. Note 7: While the LT6210 and LT6211 circuitry is capable of significant output current even beyond the levels specified, sustained short-circuit current exceeding the Absolute Maximum Rating of ±80mA may permanently damage the device. Note 8: This parameter is guaranteed to meet specified performance through design and characterization. It is not production tested. Note 9: Differential gain and phase are measured using a Tektronix TSG120YC/NTSC signal generator and a Tektronix 1780R Video Measurement Set. The resolution of this equipment is 0.1% and 0.1°. Five identical amplifier stages were cascaded giving an effective resolution of 0.02% and 0.02°. Note 10: Input voltage range on ±5V dual supplies is guaranteed by CMRR. On 3V single supply it is guaranteed by design and by correlation to the ±5V input voltage range limits. Note 11: This parameter is tested by forcing a 50mV differential voltage between the inverting and noninverting inputs. 62101f 6 LT6210/LT6211 U W TYPICAL AC PERFOR A CE VS (V) IS (mA) per Amplifier RSET (Ω) AV RL (Ω) RF (Ω) RG (Ω) SMALL-SIGNAL – 3dB BW, <1dB PEAKING (MHz) SMALL-SIGNAL ±0.1dB BW (MHz) ±5 6 20k 1 150 ±5 6 20k 2 150 1200 — 200 30 887 887 160 30 ±5 6 20k –1 150 698 698 140 20 ±5 3 56k ±5 3 56k 1 150 1690 — 100 15 2 150 1100 1100 100 15 ±5 3 56k –1 150 1200 1200 80 15 ±5 ±5 0.3 1MEG 1 1k 13.7k — 10 2 0.3 1MEG 2 1k 11k 11k 10 2 ±5 0.3 1MEG –1 1k 10k 10k 10 1.8 3, 0 6 0 1 150 1100 — 120 20 3, 0 6 0 2 150 887 887 100 20 3, 0 6 0 –1 150 806 806 100 20 3, 0 3 10k 1 150 1540 — 70 15 3, 0 3 10k 2 150 1270 1270 60 15 3, 0 3 10k –1 150 1200 1200 60 15 3, 0 0.3 270k 1 1k 13k — 7.5 2 3, 0 0.3 270k 2 1k 9.31k 9.31k 7 1.5 3, 0 0.3 270k –1 1k 10k 10k 7 1.5 U W TYPICAL PERFOR A CE CHARACTERISTICS Supply Current per Amplifier vs Temperature 4.00 RL = ∞ 5.5 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 6.0 VS = ±5V RSET = 20k TO GND VS = ±1.5V RSET = 0Ω TO V – 380 360 3.50 3.25 RL = ∞ VS = ±1.5V RSET = 10k TO V – 3.00 VS = ±5V RSET = 56k TO GND 2.75 2.50 340 VS = ±5V RSET = 1M TO GND 320 300 280 VS = ±1.5V RSET = 270k TO V – 260 240 5.0 4.5 –50 –25 400 RL = ∞ 3.75 7.0 6.5 Supply Current per Amplifier vs Temperature SUPPLY CURRENT (µA) 7.5 Supply Current per Amplifier vs Temperature 2.25 50 25 75 0 TEMPERATURE (°C) 100 125 2.00 –50 –25 220 0 25 50 75 100 125 TEMPERATURE (°C) 6210 G01 6210 G02 200 –50 –25 50 25 0 75 TEMPERATURE (°C) 100 125 6210 G03 62101f 7 LT6210/LT6211 U W TYPICAL PERFOR A CE CHARACTERISTICS (Supply Current Is Measured Per Amplifier) Input Noise Spectral Density (IS = 6mA per Amplifier) +in en 1 0.1 0.001 0.1 0.01 1 10 VS = ±5V RL = 150Ω TA = 25°C –in en 10 +in 1 0.1 0.001 100 0.01 0.1 FREQUENCY (kHz) 1 10 20 IS = 3mA RF = 1690Ω RL = 150Ω –10 V = ±5V S IS = 6mA AV = 1 RF = 1200Ω –15 T = 25°C A RL = 150Ω TYPICAL PART –20 –5 –4 –3 –2 –1 0 1 2 3 4 INPUT COMMON MODE VOLTAGE (V) 4.0 IS = 6mA RF = 1200Ω RL = 150Ω IS = 3mA RF = 1690Ω RL = 150Ω –4.0 –4.5 VS = ±5V AV = 1 CMRR > 48dB TYPICAL PART –5.0 –50 –25 5 IS = 300µA RF = 13.7k RL = 1k 50 25 75 0 TEMPERATURE (°C) 100 –4.8 VS = ±5V VCM = 0V ∆VOS = 50mV IS = 6mA RL = 1k IS = 6mA RL = 150Ω IS = 300µA RL = 1k 0 25 50 1.2 1.1 –1.1 –1.2 –1.3 0.5 0 75 100 125 TEMPERATURE (°C) IS = 3mA RF = 1540Ω RL = 150Ω –0.5 VS = ±1.5V IS = 300µA –1.0 AV = 1 RF = 13k CMRR >46dB RL = 1k TYPICAL PART –1.5 50 100 –50 –25 25 75 0 TEMPERATURE (°C) 125 4.8 IS = 300µA RL = 1k IS = 6mA RL = 100Ω VS = ±1.5V VCM = 0V ∆VOS = 50mV IS = 6mA RL = 100Ω IS = 300µA RL = 1k –1.5 –50 –25 IS = 3mA IS = 6mA 4.6 4.4 4.2 4.0 IS = 300µA 3.8 3.6 VS = ±5V VCM = 0V 3.2 ∆VOS = 50mV TA = 25°C 3.0 0 10 20 3.4 OUTPUT LOW 0 25 50 75 100 125 TEMPERATURE (°C) 6210 G10 IS = 6mA RF = 1100Ω RL = 150Ω Output Voltage Swing vs ILOAD OUTPUT HIGH –1.4 OUTPUT LOW –5.0 –50 –25 IS = 300µA RF = 13k RL = 1k 1.0 5.0 OUTPUT VOLTAGE (V) –4.6 IS = 300µA RL = 1k 100 62101 G09 1.4 OUTPUT HIGH OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) –4.4 125 1.5 IS = 6mA RL = 150Ω 10 62101GO6 Output Voltage Swing vs Temperature 1.3 4.4 1 62101 G08 5.0 IS = 6mA RL = 1k 0.1 1.5 4.5 Output Voltage Swing vs Temperature 4.6 0.01 Input Common Mode Range vs Temperature IS = 300µA RF = 13.7k RL = 1k 62101 G07 4.8 +in 1 FREQUENCY (kHz) INPUT COMMON MODE LIMIT (V) INPUT COMMON MODE LIMIT (V) OFFSET VOLTAGE (mV) IS = 300µA RF = 13.7k RL = 1k 5 –in 0.1 0.001 100 5.0 10 en 10 Input Common Mode Range vs Temperature 15 VS = ±5V RL = 1k TA = 25°C 62101GO5 Input Offset Voltage vs Input Common Mode Voltage –5 100 FREQUENCY (kHz) 62101GO4 0 Input Noise Spectral Density (IS = 300µA per Amplifier) INPUT NOISE (nV/√Hz OR pA/√Hz) –in 10 100 VS = ±5V RL = 150Ω TA = 25°C INPUT NOISE (nV/√Hz OR pA/√Hz) INPUT NOISE (nV/√Hz OR pA/√Hz) 100 Input Noise Spectral Density (IS = 3mA per Amplifier) 6210 G11 40 50 60 30 LOAD CURRENT (mA) 70 6210 G12 62101f 8 LT6210/LT6211 U W TYPICAL PERFOR A CE CHARACTERISTICS (Supply Current Is Measured Per Amplifier) Output Voltage Swing vs ILOAD Output Voltage Swing vs ILOAD Output Voltage Swing vs ILOAD –3.0 –4.0 –4.2 –4.4 IS = 300µA IS = 3mA IS = 6mA 0 10 20 40 50 60 30 LOAD CURRENT (mA) 1.0 0.8 IS = 300µA 0.6 0.4 VS = ±1.5V VCM = 0V 0.2 ∆V OS = 50mV TA = 25°C 0 0 10 20 40 50 60 30 LOAD CURRENT (mA) 70 CMRR 40 30 20 0.1 1 FREQUENCY (MHz) 10 CMRR 40 30 20 70 9 AV = 2 RF = RG = 887Ω 6 0 AV = 1 RF = 1.2k VS = ±5V –3 R = 150Ω L AV = –1 TA = 25°C RF = RG = 698Ω VOUT = 100mVP-P –6 0.1 10 100 1 FREQUENCY (MHz) 1000 6210 G19 70 VS = ±5V RL = 1k TA = 25°C –PSRR 60 +PSRR 50 CMRR 40 30 20 0.01 0.1 1 FREQUENCY (MHz) 10 0 0.001 100 0.01 0.1 1 FREQUENCY (MHz) Frequency Response vs Closed Loop Gain (IS = 300µA per Amplifier) Frequency Response vs Closed Loop Gain (IS = 3mA per Amplifier) 9 AV = 2 RF = RG = 1100Ω 6 3 0 AV = –1 VS = ±5V RF = RG = 1200Ω –3 R = 150Ω L TA = 25°C AV = 1 VOUT = 100mVP-P RF = 1690Ω –6 0.1 10 100 1 FREQUENCY (MHz) 1000 6210 G20 10 6210 G18 6210 G17 Frequency Response vs Closed Loop Gain (IS = 6mA per Amplifier) 3 40 50 60 30 LOAD CURRENT (mA) 10 0 0.001 100 GAIN (dB) GAIN (dB) 6 20 CMRR and PSRR vs Frequency (IS = 300µA per Amplifier) 50 6210 G16 9 10 6210 G15 10 0.01 IS = 3mA IS = 6mA 0 VS = ±5V RL = 150Ω TA = 25°C –PSRR +PSRR 10 0 0.001 IS = 300µA –1.1 –1.5 70 REJECTION RATIO (dB) +PSRR 60 REJECTION RATIO (dB) REJECTION RATIO (dB) 50 70 VS = ±5V RL = 150Ω TA = 25°C 60 –0.9 CMRR and PSRR vs Frequency (IS = 3mA per Amplifier) CMRR and PSRR vs Frequency (IS = 6mA per Amplifier) –PSRR –0.7 6210 G14 6210 G13 70 –0.5 –1.3 GAIN (dB) –5.0 IS = 3mA IS = 6mA OUTPUT VOLTAGE (V) –3.8 –4.8 –0.1 1.2 –3.6 –4.6 VS = ±1.5V VCM = 0V ∆VOS = 50mV –0.3 T = 25°C A 1.4 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) VS = ±5V –3.2 VCM = 0V ∆VOS = 50mV –3.4 T = 25°C A AV = 2 RF = RG = 11k 3 0 AV = –1 V = ±5V RF = RG = 10k –3 RS = 150Ω L TA = 25°C VOUT = 100mVP-P –6 0.1 10 1 FREQUENCY (MHz) AV = 1 RF = 13.7k 100 6210 G21 62101f 9 LT6210/LT6211 U W TYPICAL PERFOR A CE CHARACTERISTICS (Supply Current Is Measured Per Amplifier) 2nd and 3rd Harmonic Distortion vs Frequency (IS = 6mA per Amplifier) 0 –50 HD2 –60 –70 HD3 –80 –30 –20 HD2 – 40 –50 –60 –70 HD3 –80 –90 –10 100 0.1 1 10 FREQUENCY (MHz) 6210 G22 7 IS = 6mA RF = RG = 887Ω RL = 150Ω 6 5 4 3 IS = 300µA RF = RG = 11k RL = 1k 2 1 0 0.1 1 10 FREQUENCY (MHz) 1000 OUTPUT IMPEDANCE (Ω) OUTPUT VOLTAGE SWING (VP-P) 8 10 IS = 6mA RF = RG = 887Ω RL = 150Ω 1 1 10 FREQUENCY (MHz) 100 50 IS = 6mA RF = RG = 887Ω RL = 150Ω 10 0 10 VS = ±5V AV = 2 VOUT = 100mVP-P TA = 25°C 100 1000 CAPACITIVE LOAD (pF) 10000 6210 G28 OUTPUT SERIES RESISTANCE (Ω) 30 RL = ∞ 80 RL = 150Ω 60 40 VS = ±5V 20 IS = 6mA RF = RG = 887Ω TA = 25°C 0 0.1 10 1 FREQUENCY (MHz) 100 40 35 30 500 6210 G27 Maximum Capacitive Load vs Feedback Resistor VS = ±5V OVERSHOOT < 10% VOUT = 100mVP-P IS = 6mA RF = RG = 887Ω RL = ∞ TA = 25°C 45 20 500 100 6210 G26 70 40 6210 G24 Maximum Capacitive Load vs Output Series Resistor IS = 300µA RF = RG = 11k RL = 1k 10 120 IS = 300µA RF = RG = 11k RL = 1k 0.1 0.1 100 IS = 3mA RF = RG = 1100Ω RL = 150Ω 0.1 1 FREQUENCY (MHz) LT6211 Channel Separation vs Frequency 100 Overshoot vs Capacitive Load 50 100 VS = ±5V AV = 2 TA = 25°C 6210 G25 60 –70 Output Impedance vs Frequency VS = ±5V HD2, HD3 <–40dB AV = 2 TA = 25°C 9 HD3 –60 6210 G23 Maximum Undistorted Output Sinusoid vs Frequency 10 –50 –100 0.01 CHANNEL SEPARATION (dB) 1 10 FREQUENCY (MHz) HD2 – 40 –90 –100 0.01 25 20 15 10000 CAPACITIVE LOAD (pF) 0.1 –30 VS = ±5V RF = RG = 11k VOUT = 2VP-P RL = 1k TA = 25°C –80 –90 –100 0.01 OVERSHOOT (%) DISTORTION (dBc) –20 – 40 0 VS = ±5V RF = RG = 1.1k VOUT = 2VP-P RL = 150Ω TA = 25°C –10 DISTORTION (dBc) DISTORTION (dBc) 0 VS = ±5V –10 RF = RG = 887Ω VOUT = 2VP-P –20 R = 150Ω L –30 TA = 25°C 2nd and 3rd Harmonic Distortion vs Frequency (IS = 300µA per Amplifier) 2nd and 3rd Harmonic Distortion vs Frequency (IS = 3mA per Amplifier) 1000 VS = ±5V AC PEAKING < 3dB VOUT = 100mVP-P IS = 6mA R G = RF RL = 150Ω TA = 25°C 100 10 5 0 10 100 CAPACITIVE LOAD (pF) 1000 6210 G29 10 800 1000 1200 1400 1600 1800 FEEDBACK RESISTANCE (Ω) 2000 6210 G30 62101f 10 LT6210/LT6211 U W TYPICAL PERFOR A CE CHARACTERISTICS (Supply Current Is Measured Per Amplifier) –3dB Small-Signal Bandwidth vs Supply Current 900 VS = ±5V 100 VS = ±1.5V 10 SLEW RATE (V/µs) 800 –30 VS = ±5V AV = 2 VOUT = 7VP-P TA = 25°C HARMONIC DISTORTION (dBc) 1000 AV = 2 VOUT = 100mVP-P TA = 25°C 700 RISING EDGE RATE 600 500 FALLING EDGE RATE 400 300 200 VS = ±5V AV = 2 VOUT = 2VP-P TA = 25°C –40 –50 HD2 –60 HD3 –70 100 1 0.1 1 10 SUPPLY CURRENT PER AMPLIFIER (mA) 0 0.1 1 10 SUPPLY CURRENT PER AMPLIFIER (mA) 62101 G34 VS = ±5V TIME (100ns/DIV) VIN = ±25mV RF = RG = 11k RSET = 1M TO GND RL = 1k 62101 G35 62101 G36 Large-Signal Transient Response (IS = 300µA per Amplifier) OUTPUT (2mV/DIV) Large-Signal Transient Response (IS = 3mA per Amplifier) OUTPUT (2V/DIV) 62101 G37 Small-Signal Transient Response (IS = 300µA per Amplifier) OUTPUT (50mV/DIV) VS = ±5V TIME (10ns/DIV) VIN = ±25mV RF = RG = 1.1k RSET = 56k TO GND RL = 150Ω Large-Signal Transient Response (IS = 6mA per Amplifier) VS = ±5V TIME (10ns/DIV) VIN = ±1.75V RF = RG = 887Ω RSET = 20k TO GND RL = 150Ω 10 1 SUPPLY CURRENT PER AMPLIFIER (mA) 62101 G31 Small-Signal Transient Response (IS = 3mA per Amplifier) OUTPUT (50mV/DIV) OUTPUT (50mV/DIV) Small-Signal Transient Response (IS = 6mA per Amplifier) VS = ±5V TIME (10ns/DIV) VIN = ±25mV RF = RG = 887Ω RSET = 20k TO GND RL = 150Ω –80 0.1 62101 G32 62101 G33 OUTPUT (2V/DIV) –3dB BANDWIDTH (MHz) 1000 1MHz 2nd and 3rd Harmonic Distortion vs Supply Current Slew Rate vs Supply Current VS = ±5V TIME (10ns/DIV) VIN = ±1.75V RF = RG = 1.1k RSET = 56k TO GND RL = 150Ω 62101 G38 VS = ±5V TIME (100ns/DIV) VIN = ±1.75V RF = RG = 11k RSET = 1M TO GND RL = 1k 62101 G39 62101f 11 LT6210/LT6211 U W U U APPLICATIO S I FOR ATIO Setting the Quiescent Operating Current (ISET Pin) Input Considerations The quiescent bias point of the LT6210/LT6211 is set with either an external resistor from the ISET pin to a lower potential or by drawing a current out of the ISET pin. However, the ISET pin is not designed to function as a shutdown. The LT6211 uses two entirely independent bias networks, so while each channel can be programmed for a different supply current, neither ISET pin should be left unconnected. A simplified schematic of the internal biasing structure can be seen in Figure␣ 1. Figure 2 illustrates the results of varying RSET on 3V and ±5V supplies. Note that shorting the ISET pin under 3V operation results in a quiescent bias of approximately 6mA. Attempting to bias the LT6210/LT6211 at a current level higher than 6mA by using a smaller resistor may result in instability and decreased performance. However, internal circuitry clamps the supply current of the part at a safe level of approximately 15mA in case of accidental connection of the ISET pin directly to a negative potential. The inputs of the LT6210/LT6211 are protected by backto-back diodes. If the differential input voltage exceeds 1.4V, the input current should be limited to less than the absolute maximum ratings of ±10mA. In normal operation, the differential voltage between the inputs is small, so the ±1.4V limit is generally not an issue. ESD diodes protect both inputs, so although the part is not guaranteed to function outside the common mode range, input voltages that exceed a diode beyond either supply will also require current limiting to keep the input current below the absolute maximum of ±10mA. V+ Feedback Resistor Selection The small-signal bandwidth of the LT6210/LT6211 is set by the external feedback resistors and the internal junction capacitances. As a result, the bandwidth is a function of the quiescent supply current, the supply voltage, the value of the feedback resistor, the closed-loop gain and the load resistor. Refer to the Typical AC Performance table for more information. 6 8k Layout and Passive Components 600Ω 600Ω TO BIAS CONTROL 5 ISET 6210 F01 SUPPLY CURRENT PER AMPLIFIER (mA) Figure 1. Internal Bias Setting Circuitry VS = ±5V RSET TO GND 10 VS = 3V RSET TO GND 1 TA = 25°C RL = ∞ 0.1 0.01 0.1 1 10 100 1000 RSET PROGRAMMING RESISTOR (kΩ) 6210 F02 Figure 2. Setting RSET to Control IS As with all high speed amplifiers, the LT6210/LT6211 require some attention to board layout. Low ESL/ESR bypass capacitors should be placed directly at the positive and negative supply (0.1µF ceramics are recommended). For best transient performance, additional 4.7µF tantalums should be added. A ground plane is recommended and trace lengths should be minimized, especially on the inverting input lead. Capacitance on the Inverting Input Current feedback amplifiers require resistive feedback from the output to the inverting input for stable operation. Capacitance on the inverting input will cause peaking in the frequency response and overshoot in the transient response. Take care to minimize the stray capacitance at the inverting input to ground and between the output and the inverting input. If significant capacitance is unavoidable in a given application, an inverting gain configuration should be considered. When configured inverting, the amplifier inputs do not slew and the effect of parasitics is greatly reduced. 62101f 12 LT6210/LT6211 U W U U APPLICATIO S I FOR ATIO Capacitive Loads The LT6210/LT6211 are stable with any capacitive load. Although peaking and overshoot may result in the AC transient response, the amplifier’s compensation decreases bandwidth with increasing output capacitive load to ensure stability. To maintain a response with minimal peaking, the feedback resistor can be increased at the cost of bandwidth as shown in the Typical Performance Characteristics. Alternatively, a small resistor (5Ω to 35Ω) can be put in series with the output to isolate the capacitive load from the amplifier output. This has the advantage that the amplifier bandwidth is only reduced when the capacitive load is present. The disadvantage of this technique is that the gain is a function of the load resistance. Power Supplies The LT6210/LT6211 will operate on single supplies from 3V to 12V and on split supplies from ±1.5V to ±6V. If split supplies of unequal absolute value are used, input offset voltage and inverting input current will shift from the values specified in the Electrical Characteristics table. Input offset voltage will shift 2mV and inverting input current will shift 0.5µA for each volt of supply mismatch. Slew Rate Unlike a traditional voltage feedback op amp, the slew rate of a current feedback amplifier is not independent of the amplifier gain configuration. In a current feedback amplifier, both the input stage and the output stage have slew rate limitations. In the inverting mode, and for gains of 2 or more in the noninverting mode, the signal amplitude between the input pins is small and the overall slew rate is that of the output stage. For gains less than 2 in the noninverting mode, the overall slew rate is limited by the input stage. The input slew rate of the LT6210/LT6211 on ±5V supplies with an RSET resistor of 20k (IS = 6mA) is approximately 600V/µs and is set by internal currents and capacitances. The output slew rate is additionally constrained by the value of the feedback resistor and internal capacitance. At a gain of 2 with 887Ω feedback and gain resistors, ±5V supplies and the same biasing as above, the output slew rate is typically 700V/µs. Larger feedback resistors, lower supply voltages and lower supply current levels will all reduce slew rate. Input slew rates significantly exceeding the output slew capability can actually decrease slew performance in a positive gain configuration; the cleanest transient response will be obtained from input signals with slew rates slower than 1000V/µs. Output Swing and Drive The output stage of the LT6210/LT6211 consists of a pair of class-AB biased common emitters that enable the output to swing rail-to-rail. Since the amplifiers can potentially deliver output currents well beyond the specified minimum short-circuit current, care should be taken not to short the output of the device indefinitely. Attention must be paid to keep the junction temperature of the IC below the absolute maximum rating of 150°C if the output is used to drive low impedance loads. See Note 5 for details. Additionally, the output of the amplifier has reverse-biased ESD diodes connected to each supply. If the output is forced beyond either supply, large currents will flow through these diodes. If the current is limited to 80mA or less, no damage to the part will occur. U TYPICAL APPLICATIO 3V Cable Driver with Active Termination Driving back-terminated cables on single supplies usually results in very limited signal amplitude at the receiving end of the cable. However, positive feedback can be used to reduce the size of the series back termination resistor, thereby decreasing the attenuation between the series and shunt termination resistors while still maintaining controlled output impedance from the line-driving amplifier. Figure 3 shows the LT6210 using this “active termination” scheme on a single 3V supply. The amplifier is AC-coupled and in an inverting gain configuration to maximize the input signal range. The gain from VIN to the receiving end of the cable, VOUT, is set to –1. The effective impedance looking into the amplifier circuit from the cable is 50Ω throughout the usable bandwidth. 62101f 13 LT6210/LT6211 U TYPICAL APPLICATIO resistor and has a full signal 1VP-P bandwidth of 50MHz. Small signal –3dB bandwidth extends from 1kHz to 56MHz with the selected coupling capacitors. The response of the cable driver with a 1MHz sinusoid is shown in Figure 4. The circuit is capable of transmitting a 1.5VP-P undistorted sinusoid to the 50Ω termination 3V 2k 1% 2k 1% 1.3k 1% VIN 1V/DIV 3V 4 2.2µF 249Ω 1% VIN 6 + 1 LT6210 3 2 – 5 RSER 15Ω 1% 2.2µF VA 1V/DIV VOUT RTERM 50Ω VA 154Ω 1% VOUT 1V/DIV 6210 F03 3300pF NPO 200ns/DIV Figure 3. 3V Cable Driver with Active Termination 6210 F04 Figure 4. Response of Circuit at 1MHz W W SI PLIFIED SCHE ATIC V+ 6 V+ +IN –IN 3 4 600Ω 600Ω OUT 1 OUTPUT BIAS CONTROL V– 8k V– 2 SUPPLY CURRENT CONTROL 5 ISET 6210 SS U PACKAGE DESCRIPTIO DD Package 10-Lead Plastic DFN (3mm × 3mm) (Reference LTC DWG # 05-08-1699) R = 0.115 TYP 6 0.38 ± 0.10 10 0.675 ±0.05 3.50 ±0.05 1.65 ±0.05 2.15 ±0.05 (2 SIDES) 3.00 ±0.10 (4 SIDES) PACKAGE OUTLINE 1.65 ± 0.10 (2 SIDES) PIN 1 TOP MARK (SEE NOTE 5) (DD10) DFN 0403 5 0.25 ± 0.05 0.200 REF 0.50 BSC 2.38 ±0.05 (2 SIDES) 1 0.75 ±0.05 0.00 – 0.05 0.25 ± 0.05 0.50 BSC 2.38 ±0.10 (2 SIDES) BOTTOM VIEW—EXPOSED PAD RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS NOTE: 4. EXPOSED PAD SHALL BE SOLDER PLATED 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2). CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT 5. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 62101f 14 LT6210/LT6211 U PACKAGE DESCRIPTIO MS Package 10-Lead Plastic MSOP (Reference LTC DWG # 05-08-1661) 3.00 ± 0.102 (.118 ± .004) (NOTE 3) 0.497 ± 0.076 (.0196 ± .003) REF 10 9 8 7 6 0.889 ± 0.127 (.035 ± .005) 0.254 (.010) 3.00 ± 0.102 (.118 ± .004) (NOTE 4) 4.90 ± 0.152 (.193 ± .006) DETAIL “A” 0° – 6° TYP GAUGE PLANE 5.23 (.206) MIN 1 2 3 4 5 3.20 – 3.45 (.126 – .136) 0.53 ± 0.152 (.021 ± .006) 0.86 (.034) REF 1.10 (.043) MAX DETAIL “A” 0.18 (.007) 0.50 0.305 ± 0.038 (.0197) (.0120 ± .0015) BSC TYP RECOMMENDED SOLDER PAD LAYOUT SEATING PLANE NOTE: 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 0.17 – 0.27 (.007 – .011) TYP 0.127 ± 0.076 (.005 ± .003) 0.50 (.0197) BSC MSOP (MS) 0603 S6 Package 6-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 – 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 – 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 – 0.90 0.20 BSC 0.01 – 0.10 1.00 MAX DATUM ‘A’ 0.30 – 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 0.09 – 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 62101f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15 LT6210/LT6211 U TYPICAL APPLICATIO S Line Driver with Power Saving Mode In applications where low distortion or high slew rate are desirable but not necessary at all times, it may be possible to decrease the LT6210 or LT6211’s quiescent current when the higher power performance is not required. Figure 5 illustrates a method of setting quiescent current with a FET switch. In the 5V dual supply case pictured, shorting the ISET pin through an effective 20k to ground sets the supply current to 6mA, while the 240k resistor at the ISET pin with the FET turned off sets the supply current to approximately 1mA. The feedback resistor of 4.02k is selected to minimize peaking in low power mode. The bandwidth of the LT6210 in this circuit increases from about 40MHz in low power mode to over 200MHz in full speed mode, as illustrated in Figure 6. Other AC specs also improve significantly at the higher current setting. The following table shows harmonic distortion at 1MHz with a 2VP-P sinusoid at the two selected current levels. Harmonic Distortion LOW POWER FULL SPEED HD2 –53dBc HD2 –68dBc HD3 –46dBc HD3 –77dBc 3 R3 4.02k 2 5V FULL SPEED MODE IS = 6mA 4 – 6 LT6210 VIN 3 + R2 22k VOUT RLOAD 150Ω 2 5 HS/LP 1 –5V AMPLITUDE (dB) 1 0 –1 LOW POWER MODE IS = 1mA –2 –3 –4 R1 240k TA = 25°C VOUT = 100mVP-P –5 2N7002 –6 0 6210 F05 1 10 100 FREQUENCY (MHz) 1000 6210 F06 Figure 5. Line Driver with Low Power Mode Figure 6. Frequency Response for Full Speed and Low Power Mode RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1252/LT1253/LT1254 100MHz Low Cost Video Amplifiers Single, Dual and Quad Current Feedback Amplifiers LT1395/LT1396/LT1397 400MHz, 800V/µs Amplifiers Single, Dual and Quad Current Feedback Amplifiers LT1398/LT1399 300MHz Amplifiers with Shutdown Dual and Triple Current Feedback Amplifiers LT1795 50MHz, 500mA Programmable IS Amplifier Dual Current Feedback Amplifier LT1806/LT1807 325MHz, 140V/µs Rail-to-Rail I/O Amplifiers Single and Dual Voltage Feedback Amplifiers LT1815/LT1816/LT1817 220MHz, 1500V/µs Programmable IS Operational Amplifier Single, Dual and Quad Voltage Feedback Amplifiers 62101f 16 Linear Technology Corporation LT/TP 0204 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2003