TF12A80 Standard Triac Symbol ○ TO-220F VDRM = 800V 2.T2 IT(RMS) = 12 A ▼▲ ○ ITSM = 126A 3.Gate 1.T1 ○ 1 2 3 Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ General Description This device is suit able for low power AC switching application, phase control application such a s fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series. Absolute Maximum Ratings Symbol VDRM ( Tj = 25°C unless otherwise specified ) Parameter Condition Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz IT(RMS) R.M.S On-State Current Tj = 125 °C, Full Sine wave ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t Ratings 800 Units V 12 A 120/126 A tp = 10ms 72 A 2s Average Gate Power Dissipation Tj=125°C 1 W IGM Peak Gate Current Tj=125°C 2 A TJ Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C I2 t PG(AV) TSTG 1/6 J u l y, 2010. Rev.2 copyright @ Apollo Electron Co., Ltd. All rights reserved. TF12A80 Electrical Characteristics (Tj=25 °C unless otherwise specified) Symbol Conditions Ratings Min. Max. --- 2 .0 mA --- 1.55 V ─ ─ 30 ─ ─ 30 Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave Tj = 125 °C --- VTM Peak On-State Voltage ITM = 17 A, tp=380㎲ --- I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 ─ - dv/dt IH Gate Trigger Current Gate Trigger Voltage VD = 12V, RL=30 Ω VD = 12 V, RL=30 Ω Unit Typ. IDRM VGD 2/6 Items Non-Trigger Gate Voltage TJ = 125 °C, VD = VDRM RL=3.3kΩ 0.2 Critical Rate of Rise Off-State Voltage TJ = 125 °C VD=2/3 VDRM 200 Holding Current IT=0.2A ─ ─ -- ─ 50 mA V V V/㎲ mA TF12A80 Fig 1. Gate Characteristics 2 10 VGM (10V) 1 10 On-State Current [A] PGM (5W) PG(AV) (1W) 25 ℃ 0 IGM (2A) Gate Voltage [V] Fig 2. On-State Voltage 10 o TJ = 125 C 1 10 o TJ = 25 C 0 10 VGD (0.2V) -1 10 1 2 10 0.5 3 10 10 1.0 1.5 16 π θ o θ = 180 o θ = 150 o θ = 120 2π θ 12 360° 10 θ : Conduction Angle 8 Allowable Case Temperature [ oC] Power Dissipation [W] 3.0 3.5 130 14 6 θ = 90 o θ = 60 o θ = 30 o 4 2 0 2 4 6 8 10 12 120 110 100 2π θ 90 80 θ : Conduction Angle 0 2 4 θ = 30 o θ = 60 o θ θ θ θ 360° 70 14 θ π RMS On-State Current [A] 6 8 10 12 o = 90 o = 120o = 150 o = 180 14 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 200 60Hz 0 0 10 V _ o o 100 50 VGT (25 C) 150 VGT (t C) Surge On-State Current [A] 2.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation 0 2.0 On-State Voltage [V] Gate Current [mA] V V 50Hz 1 10 Time (cycles) 2 10 GT3 1 0.1 -50 + GT1 _ GT1 0 50 100 150 o Junction Temperature [ C] 3/6 TF12A80 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o IGT (t C) IGT (25 C) o Transient Thermal Impedance [ C/W] 10 I 1 I I 0.1 -50 0 50 Junction Temperature [ C] 4/6 _ GT3 100 o + GT1 _ GT1 150 1 0.1 -2 10 -1 10 0 10 Time (sec) 1 10 2 10 TF12A80 TO-220F Package Dimension Sym bol A B C D E F G H I J K L M N MIN 9.88 15.30 2.95 10.30 0.95 1.81 0.50 3.00 4.35 6.20 0.41 2.30 2.53 2.34 IN C H ES TYP 10.08 15.50 3.00 10.50 1.08 1.84 0.70 3.20 4.45 6.40 0.51 2.50 2.73 2.54 MAX 10.28 15.70 3.05 10.70 1.20 1.87 0.90 3.40 4.55 6.60 0.61 2.70 2.93 2.74 MILLIMETER S MIN 25.10 25.60 39.37 38.86 7.49 7.62 26.16 26.67 2.41 2.74 4.60 4.67 1.27 1.78 7.62 8.13 11.05 11.30 15.75 16.26 1.03 1.28 5.84 6.35 6.43 6.93 5.94 6.45 TYP 26.11 39.88 7.75 27.18 3.05 4.75 2.29 8.64 11.56 16.76 1.54 6.86 7.44 6.96 5/6 TF12A80 TO-220F Package Dimension, Forming Dim. mm Typ. Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O P Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.23 0.45 0.65 2.62 1.36 0.63 0.78 0.099 0.048 0.018 0.0025 0.103 0.054 0.025 0.031 5.0 3.7 3.2 1.5 φ φ 1 φ 2 0.197 0.146 0.126 0.059 A E F I H B φ φ1 C φ2 L G M 1 D 2 3 N O J P K 6/6 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 1. T1 2. T2 3. Gate