MOSFET SMD Type P-Channel MOSFET AO4411 (KO4411) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-8 A (VGS =-10V) ● RDS(ON) ＜ 32mΩ (VGS =-10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 55mΩ (VGS =-4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -8 -6.6 A -40 3 2.1 W 40 75 RthJL 30 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4411 (KO4411) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage ID=-250μA, VGS=0V Min Typ -30 RDS(On) VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -5 VGS=-10V, ID=-8A -1.2 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, VDS=-5V VDS=-5V, ID=-8A VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A 3.6 5 18.4 23 9.3 11.5 2.7 td(on) 7.1 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω tf 8.4 Body Diode Reverse Recovery Time trr 21.5 Body Diode Reverse Recovery Charge Qrr www.kexin.com.cn nC ns 18.9 Turn-Off Fall Time IF=-8A, dI/dt=100A/us Ω 3.4 27 12.5 IS IS=-1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. 2 pF 122 VGS=0V, VDS=0V, f=1MHz Turn-On DelayTime KC**** S 1120 190 4.9 4411 mΩ 14.5 Qgd Marking V A Gate Drain Charge ■ Marking -2.4 -40 920 Qg VSD nA 55 Qgs Diode Forward Voltage ±100 33 TJ=125℃ Gate Source Charge Maximum Body-Diode Continuous Current uA 32 VGS=-4.5V, ID=-5A On state drain current Unit V VGS=-10V, ID=-8A Static Drain-Source On-Resistance Max nC -4.2 A -1 V MOSFET SMD Type P-Channel MOSFET AO4411 (KO4411) ■ Typical Characterisitics 30 -10V 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V -6V -5V 15 -3.5V 10 5 15 10 125°C 5 VGS=-3V 0 25°C 0 0 1 2 3 4 5 0 0.5 60 2 2.5 3 3.5 4 4.5 5 ID=-7.5A Normalized On-Resistance 50 VGS=-4.5V 1.40 45 RDS(ON) (mΩ) 1.5 1.60 55 40 VGS=-10V 1.20 35 30 25 VGS=-4.5V 1.00 VGS=-10V 20 15 0.80 10 0 5 10 15 20 0 25 25 80 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 70 ID=-7.5A 60 1.0E+00 1.0E-01 50 125°C 40 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-03 30 25°C 20 1.0E-04 25°C 1.0E-05 10 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4411 (KO4411) ■ Typical Characterisitics 10 1250 Capacitance (pF) 8 -VGS (Volts) 1500 VDS=-15V ID=-8A 6 4 Ciss 1000 2 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C, TA=25°C 1ms 10ms 1.0 1s 10s 10 -VDS (Volts) 100 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 25 30 TJ(Max)=150°C TA=25°C 20 10 1 10 20 DC 0.1 0.1 15 30 100µs 0.1s 10 40 10µs RDS(ON) limited 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 4 Crss 250 0.0001 www.kexin.com.cn 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000