INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A80W，ITK10A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.46Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 9.5 A IDM Drain Current-Single Pulsed 38 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 3.12 ℃/W 62.5 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A80W，ITK10A80W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 800 VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.45mA 3.0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.8A IGSS Gate-Source Leakage Current IDSS VSDF TYP MAX UNIT V 4.0 V 550 mΩ VGS= ±20V;VDS= 0V ±1 μA Drain-Source Leakage Current VDS= 800V; VGS= 0V 10 μA Diode forward voltage IDR =9.5A, VGS = 0 V 1.7 V isc website：www.iscsemi.cn 2 460 isc & iscsemi is registered trademark