CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C VGS=10V, ID=10A RDSON(TYP) VGS=4.5V, ID=8A 30V 10A 18A 12.4mΩ 16.8mΩ Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating package Equivalent Circuit Outline DFN3×3 MTB020N03KV8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB020N03KV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB020N03KV8 CYStek Product Specification Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current *1 Single Pulse Avalanche Current Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS 30 ±20 18 11.4 10 8 72 18 16.2 8 2.5 -55~+150 ID *2 IDM IAS EAS PD Tj, Tstg Unit V A mJ W °C *2. 100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V, VDD=15V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max * Surface mounted on a 1 in² pad of 2oz copper. Symbol RθJC RθJA Value 16 50 * Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf MTB020N03KV8 Min. Typ. Max. Unit 30 1 - 0.02 12.4 16.8 10 2.5 ±10 1 25 16 24 - V V/℃ V - 437 62 49 5.8 18.6 33.8 11.8 - Test Conditions S VGS=0V, ID=250μA Reference to 25℃, ID=1mA VDS=VGS, ID=250μA VGS=±16V, VDS=0V VDS=30V, VGS=0V VDS=30V, VGS=0V, Tj=125℃ ID=10A, VGS=10V ID=8A, VGS=4.5V VDS=5V, ID=10A pF VDS=25V, VGS=0V, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=6Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. Symbol Min. Qg Qgs Qgd Source Drain Diode *IS *ISM *VSD *Trr Qrr - Typ. 11.4 1.9 3.1 Max. - 0.79 9.4 4 4 16 1.2 - Unit nC Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 3/9 Test Conditions VDS=15V, ID=10A, VGS=10V A V ns nC IS=2.3A,VGS=0V IF=2.3A,VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTB020N03KV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 40 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V ID, Drain Current (A) 35 30 4.5V 25 20 4V 15 10 3.5V 5 1.2 1 0.8 0.6 VGS=3V 0.4 0 0 1 2 3 ID=250μA, VGS=0V 4 -75 -50 -25 5 VDS, Drain-Source Voltage(V) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=10V 10 VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(on), Normalized Static DrainSource On-State Resistance 150 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=10A 120 90 60 30 2 VGS=10V, ID=10A RDSON@Tj=25°C : 12.4mΩ typ. 1.6 1.2 0.8 VGS=4.5V, ID=8A RDSON@Tj=25°C : 16.8mΩ typ. 0.4 0 0 0 MTB020N03KV8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0 5 10 15 20 VDS, Drain-Source Voltage(V) 25 -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Gate Charge Characteristics 10 1 VDS=15V 0.1 Ta=25°C Pulsed 8 VDS=15V 6 VDS=24V 4 2 ID=10A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 10 Qg, Total Gate Charge(nC) 12 14 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 100 20 10 100μs 1ms 10ms 1 100ms 1s DC 0.1 TC=25°C, Tj=150°C VGS=10V, RθJC=16°C/W Single Pulse MTB020N03KV8 16 14 12 10 8 6 4 VGS=10V, RθJC=16°C/W 2 0 0.01 0.01 ID, Maximum Drain Current(A) 18 RDSON Limited ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Case 40 300 VDS=10V 250 TJ(MAX) =150°C TC=25°C RθJC=16°C/W 30 25 Power (W) ID, Drain Current(A) 35 20 15 200 150 100 10 50 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=16°C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB020N03KV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB020N03KV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB020N03KV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 9/9 DFN3×3 Dimension Marking: D D D D B020 N03K Date Code S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Millimeters Min. Max. 0.605 0.850 0.152 REF 0.000 0.050 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB020N03KV8 CYStek Product Specification