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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FAN73711 High-Current, High-Side Gate Drive IC Features Description Floating Channel for Bootstrap Operation to +600 V The FAN73711 is a monolithic high-side gate-drive IC that can drive high-speed MOSFETs and IGBTs operating up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse-current driving capability and minimum cross-conduction. 4 A / 4 A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3 V and 5 V Input Logic Compatible Output In-phase with Input Signal Under-Voltage Lockout for VBS Built-In Shunt Regulator on VDD and VBS 8-Lead, Small Outline Package (SOP) Applications High-Speed Gate Driver Sustain Switch Driver in PDP Application Energy Recovery Circuit Switch Driver in PDP Application Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. The high-current and low-output voltage-drop feature makes this device suitable as a sustain and energyrecovery circuit switch driver in plasma display panel, motor drive inverter, switching power supply, and highpower DC-DC converter applications. High-Power Buck Converter Motor Drive Inverter 8-SOP Ordering Information Part Number Operating Temperature Range Package Packing Method FAN73711MX 40°C ~ 125°C 8-SOP Tape and Reel © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com FAN73711 — High-Current, High-Side Gate Drive IC March 2013 15V DBOOT3 VS 15V FAN73711 RBOOT1 DBOOT1 8 VB Q3 1 VDD 2 IN 4 GND VB 8 HO 7 VS 6 NC 5 NC 3 5 NC 2 IN3 8 IN HO 7 3 NC VS 6 NC 5 GND 4 D2 To Panel R2 Q1 VB 2 VS D4 FAN73711 8 VB Q4 Q2 R5 IN2 IN 6 R1 FAN73711 VDD HO L1 D1 DBOOT2 1 VDD 1 7 CBOOT3 R4 CBOOT1 3 NC R3 D3 FAN73711 IN1 RBOOT3 VDD 1 R7 7 HO IN 6 VS NC 3 5 NC 2 IN4 CBOOT2 C1 R6 C3 R8 4 GND GND 4 C2 Energy Recovery System Sustain Drive Part FAN73711 Rev.01 Figure 1. Floated Bi-Directional Switch and Half-Bridge Driver: PDP Application VIN 15V RBOOT DBOOT FAN73711 1 VDD VB 8 R1 2 IN PWM HO 7 CBOOT C1 3 NC 4 GND L1 R2 VS 6 NC 5 D1 C2 VOUT FAN73711 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 2 FAN73711 — High-Current, High-Side Gate Drive IC Typical Application Diagrams 1 GND 4 UVLO PULSE GENERATOR IN VDD 2 110K NOISE CANCELLER R R S Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS Pin 3 and 5 are no connection. FAN73711 Rev.01 Figure 3. Functional Block Diagram Pin Configuration VDD 1 IN 2 8 VB 7 HO FAN73711 NC 3 6 VS GND 4 5 NC FAN73711 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 VDD 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Supply Voltage Ground © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 3 FAN73711 — High-Current, High-Side Gate Drive IC Internal Block Diagram Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Characteristics (1) VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage VHO High-Side Floating Output Voltage VDD VIN Low-Side and Logic Supply Voltage (1) Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(2,3,4) 0.625 W JA Thermal Resistance 200 C/W TJ Junction Temperature -55 +150 C TSTG Storage Temperature -55 +150 C dVS/dt Logic Input Voltage Min. Notes: 1. 2. 3. 4. This IC contains a shunt regulator on VDD and VBS. This supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VB High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VS VB V GND VDD V VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage 10 20 V Operating Ambient Temperature -40 +125 C TA © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 4 FAN73711 — High-Current, High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS)=15.0 V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Power Supply Section IQDD Quiescent VDD Supply Current IPDD Operating VDD Supply Current Bootstrapped Supply Section VBS Supply Under-Voltage Positive-Going VBSUV+ Threshold Voltage VBS Supply Under-Voltage Negative-Going VBSUVThreshold Voltage V Supply Under-Voltage Lockout VBSHYS BS Hysteresis Voltage Test Condition VIN=0 V or 5 V 25 70 A fIN=20 kHz, No Load 35 100 A VBS=Sweep 8.0 9.0 10.0 V VBS=Sweep 7.3 8.3 9.3 V VBS=Sweep 0.7 Offset Supply Leakage Current IQBS Quiescent VBS Supply Current VIN=0V or 5 V Operating VBS Supply Current CLOAD=1000 pF, fIN=20 kHz, rms Value V 10 A 60 120 A 470 800 23 25 V 0.8 V V 65 A VB=VS=625 V ILK IPBS Min. Typ. Max. Unit A Shunt Regulator Section VSHUNT VDD and VBS Shunt Regulator Clamping Voltage VDD=Sweep or VBS=Sweep ISHUNT=5 mA Input Logic Section VIH Logic “1” Input Voltage Logic “0” Input Voltage VIL 2.5 IIN+ Logic Input High Bias Current VIN=5 V IIN- Logic Input Low Bias Current VIN=0 V RIN Input Pull-Down Resistance Gate Driver Output Section High Level Output Voltage (VBIAS - VO) VOH VOL 40 2 90 110 No Load IO- No Load Output High, Short-Circuit Pulsed Current(5) VHO=0 V, VIN=5 V, PW 10 µs Output Low, Short-Circuit Pulsed Current(5) VHO=15 V,VIN=0 V, PW 10 µs VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO IO+ 21 Low Level Output Voltage A K 1.2 V 30 mV 3 4 A 3 4 A -9.8 -7.0 V Note: 5. These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15 V, GND=0 V, CLOAD=1000 pF, TA=25°C, unless otherwise specified. Symbol Typ. Max. Unit ton Turn-On Propagation Delay Parameter VS=0 V Conditions Min. 150 210 ns toff Turn-Off Propagation Delay VS=0 V 150 210 ns tr Turn-On Rise Time 25 50 ns tf Turn-Off Fall Time 15 40 ns © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 5 FAN73711 — High-Current, High-Side Gate Drive IC Electrical Characteristics 200 180 180 tOFF [ns] tON [ns] 200 160 160 140 140 120 120 100 100 -40 -20 0 20 40 60 80 100 -40 120 -20 0 50 50 40 40 30 20 10 10 0 20 40 60 80 100 0 -40 120 -20 0 Figure 7. Turn-On Rise Time vs. Temperature 100 120 20 40 60 80 100 120 Figure 8. Turn-Off Fall Time vs. Temperature 100 100 75 75 IQDD [A] IQDD [A] 80 Temperature [°C] Temperature [°C] 50 50 25 25 0 -40 60 30 20 -20 40 Figure 6. Turn-Off Propagation Delay vs. Temperature tF [ns] tR [ns] Figure 5. Turn-On Propagation Delay vs. Temperature 0 -40 20 Temperature [°C] Temperature [°C] -20 0 20 40 60 80 100 0 -40 120 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 9. Quiescent VDD Supply Current vs. Temperature Figure 10. Quiescent VBS Supply Current vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 -20 www.fairchildsemi.com 6 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics 100 800 600 IPBS [A] IPDD [A] 80 60 40 200 20 0 -40 400 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] Figure 11. Operating VDD Supply Current vs. Temperature 40 60 80 100 120 Figure 12. Operating VBS Supply Current vs. Temperature 10.0 9.5 9.0 VBSUV- [V] 9.5 VBSUV+ [V] 20 Temperature [°C] 9.0 8.5 8.0 8.5 7.5 8.0 -40 -20 0 20 40 60 80 100 7.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 13. VBS UVLO+ vs. Temperature Figure 14. VBS UVLO- vs. Temperature 30 1.2 25 VOL [mV] VOH [V] 0.9 0.6 20 15 10 0.3 5 0.0 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 15. High-Level Output Voltage vs. Temperature Figure 16. Low-Level Output Voltage vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 -20 www.fairchildsemi.com 7 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) 2.5 2.0 2.0 VIL [V] VIH [V] 2.5 1.5 1.5 1.0 1.0 0.5 -40 -20 0 20 40 60 80 100 0.5 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 17. Logic High Input Voltage vs. Temperature Figure 18. Logic Low Input Voltage vs. Temperature -7 60 -8 40 VS [V] IIN+ [A] 50 30 -9 -10 20 -11 10 0 -40 -20 0 20 40 60 80 100 -12 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 19. Logic Input High Bias Current vs. Temperature Figure 20. Allowable Negative VS Voltage vs. Temperature 25 VSHUNT [V] 24 23 22 21 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Figure 21. Shunt Regulator Clamping Voltage vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 8 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) Timing Diagram 15V 50% VDD 10nF VB 10µF 10µF 0.1µF 15V 50% IN VS GND ton tr toff tf FAN73711 1000pF 90% 90% HO IN OUT 10% 10% FAN73711 Rev.01 Figure 22. Switching Time Test Circuit and Waveform Definitions © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 9 FAN73711 — High-Current, High-Side Gate Drive IC Switching Time Definitions & $ % 3,1,' 0 & % $ /$1'3$77(515(&200(1'$7,21 7239,(: % & & ; 237,21$%(9(/('*( & )52179,(: & 237,21%121%(9(/('*( 127(681/(6627+(5:,6(63(&,),(' %(9(/ $7+,63$&.$*(&21)250672-('(&06 9$5,$7,21$(;&(37:+(5(127(' %$//',0(16,216$5(,10,//,0(7(56 & 2872)-('(&67$1'$5'9$/8( *$8*( 5 3/$1( 6($7,1* 3/$1( '',0(16,216$5((;&/86,9(2)%8556 02/')/$6+$1'7,(%$5(;7586,216 (/$1'3$77(51$63(5,3&62,&3;0 )),/(1$0(0.70%5(9 '(7$,/% 6&$/( Figure 23. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 10 FAN73711 — High-Current, High-Side Gate Drive IC Package Dimensions FAN73711 — High-Current, High-Side Gate Drive IC © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.1 www.fairchildsemi.com 11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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