MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE FS50KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 48mΩ ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ............. 90ns ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 50µH Ratings Unit 100 ±20 V V 50 200 A A 50 A 50 200 A A 30 –55 ~ +150 W °C –55 ~ +150 2000 °C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 37 48 mΩ — — 40 0.93 52 1.20 mΩ V — — 40 3000 — — S pF — — 410 210 — — pF pF — — 22 65 — — ns ns — 270 — ns — — 160 1.0 — 1.5 ns V — — — 90 4.17 — °C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 100 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 50 100 150 200 102 7 5 3 2 tw = 10ms 100ms 101 7 5 3 2 100 7 5 3 1ms 10ms TC = 25°C Single Pulse 100ms DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 10V 4V 80 60 40 3V 20 VGS = 10V 50 TC = 25°C Pulse Test 5V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 5V 3.5V TC = 25°C Pulse Test 40 3V 30 20 2.5V 10 PD = 30W PD = 30W 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 4 3 ID = 80A 2 50A 1 20A 0 0 2 4 6 TC = 25°C VDS = 10V Pulse Test 20 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25°C 75°C 125°C 2 101 7 5 4 3 2 0 2 4 6 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C 7 f = 1MHZ 5 3 2 Ciss Coss Crss SWITCHING TIME (ns) 104 VGS = 0V CAPACITANCE Ciss, Coss, Crss (pF) 10V FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 102 7 5 3 2 VGS = 4V 40 TRANSFER CHARACTERISTICS (TYPICAL) 60 103 7 5 3 2 60 DRAIN CURRENT ID (A) 80 2 80 0 10 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 8 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 0 100 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 tf 102 7 5 4 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) td(off) Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 101 100 tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 4 VDS = 20V 40V 80V 2 0 20 40 60 80 40 TC = 125°C 75°C 25°C 20 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 60 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 80 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) 100 Tch = 25°C ID = 50A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 3 0.5 2 100 0.2 7 PDM 5 0.1 3 tw 2 0.05 T 0.02 10–1 7 0.01 D= tw 5 T Single Pulse 3 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999