AP9973H/J Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Surface Mount Package BVDSS 60V RDS(ON) 80mΩ ID 14A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9973J) are available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V 14 A ID@TA=100℃ Continuous Drain Current, VGS @ 10V 9 A 1 IDM Pulsed Drain Current 40 A PD@TA=25℃ Total Power Dissipation 27 W Linear Derating Factor 0.22 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.5 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 2001023031 AP9973H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.05 - V/℃ VGS=10V, ID=9A - - 80 mΩ VGS=4.5V, ID=6A - - 100 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=9A - 8.6 - S VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ± 20V - - ±100 nA ID=9A - 8 13 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC VDS=30V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=9A - 15 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=3.3Ω - 3 - ns Ciss Input Capacitance VGS=0V - 720 1150 pF Coss Output Capacitance VDS=25V - 77 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=14A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=9A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP9973H/J 45 32 o T C =25 C ID , Drain Current (A) 35 30 24 25 20 15 10 20 16 12 V G =3.0V 8 V G =3.0V 4 5 0 0 0 1 2 3 4 5 0 6 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 90 I D =9A ID=9A o T C =25 C V G =10V 2.0 Normalized RDS(ON) 85 RDS(ON) (mΩ ) 10V 7.0V 5.0V 4.5V T C =150 o C 28 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 40 80 75 1.5 1.0 0.5 70 0.0 65 3 5 7 9 -50 11 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 14 12 2 IS(A) 8 VGS(th) (V) 10 T j =25 o C o T j =150 C 6 1.5 1 4 0.5 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9973H/J f=1.0MHz 10000 12 V DS =48V V DS =38V V DS =30V 8 1000 Ciss C (pF) VGS , Gate to Source Voltage (V) ID=9A 10 6 4 100 Coss Crss 2 0 10 0 4 8 12 16 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thjc) 1 1ms ID (A) 10 10ms 100ms 1s DC 1 T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q