HFP50N06
Pb Free Plating Product
Pb
HFP50N06
50A,60V Heatsink Planar N-Channel Power MOSFET
Features
•
•
•
•
•
•
•
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
{
2. Drain
BVDSS = 60V
●
◀
1. Gate
{
RDS(ON) = 0.022 ohm
▲
●
●
ID = 50A
{
3. Source
TO-220M-SQ
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
1
Absolute Maximum Ratings
Symbol
VDSS
ID
2
3
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
HFP50N06
60
Units
V
50
A
35.4
A
200
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
490
mJ
IAR
Avalanche Current
(Note 1)
50
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12
7.0
120
0.8
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Max
1.24
Units
°C/W
Page 1/6
http://www.thinkisemi.com/
HFP50N06
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.06
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 150°C
--
--
10
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.018
0.022
Ω
--
22
--
S
--
1180
1540
pF
--
440
580
pF
--
65
90
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 25 A
gFS
Forward Transconductance
VDS = 25 V, ID = 25 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 25 A,
RG = 25 Ω
(Note 4, 5)
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4, 5)
--
15
40
ns
--
105
220
ns
--
60
130
ns
--
65
140
ns
--
31
41
nC
--
8
--
nC
--
13
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
50
A
ISM
--
--
200
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 50 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
52
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 50 A,
dIF / dt = 100 A/µs
--
75
--
nC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/
HFP50N06
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
1
10
175℃
25℃
※ Note :
1. 250μ s Pulse Test
2. TC = 25℃
0
※ Notes :
1. VDS = 30V
2. 250μ s Pulse Test
-55℃
10
0
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.05
2
VGS = 10V
0.03
IDR, Reverse Drain Current [A]
R DS(ON) [ Ω ],
Drain-Source On-Resistance
10
0.04
VGS = 20V
1
10
0.02
0.01
※ Note : TJ = 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
175℃
0.00
0
50
100
150
200
0
10
ID, Drain Current [A]
0.2
1.0
1.2
1.4
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1500
1000
Crss
500
V GS , Gate-Source Voltage [V]
Capacitance [pF]
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2500
2000
0.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
0.4
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 50A
0
0
-1
10
0
0
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
5
10
15
20
25
30
35
1
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Page 3/6
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HFP50N06
Typical Characteristics
(Continued)
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 25 A
0.0
-100
200
-50
10
150
Figure 8. On-Resistance Variation
vs. Temperature
3
200
60
50
100μ s
2
ID , Drain Current [A]
ID , Drain Current [A]
100
Figure 7. Breakdown Voltage Variation
vs. Temperature
1 ms
10 ms
DC
10
50
TJ, Junction Temperature [ C]
Operation in This Area
is Limited by R DS(on)
10
0
o
o
TJ, Junction Temperature [ C]
1
※ Notes :
o
40
30
20
10
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
10
0
1
10
10
0
25
2
50
100
125
150
175
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N otes :
1 . Z θ J C( t ) = 1 . 2 4 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
JC
(t), T h e rm a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
0 .0 1
t2
Z
θ
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 4/6
http://www.thinkisemi.com/
HFP50N06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
ID (t)
VDS (t)
VDD
tp
Time
Page 5/6
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HFP50N06
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 6/6
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