@vic PNP EPITAXIAL SILICON TRANSISTOR AV5401 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Tj TSTG -160 -150 -5 625 -600 150 -55 ~ +150 V V V mW mA °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Ic=-100µA,IE=0 Ic=-1mA,IB=0 IE=-10µA,Ic=0 VCB=-120V,IE=0 VEB=-3V,Ic=0 VCE=-5V,Ic=-1mA VCE=-5V,Ic=-10mA VCE=-5V,Ic=-50mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA VCE=-10V,Ic=-10mA,f=100MHz -160 -150 -6 Collector-emitter saturation voltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) 80 80 80 100 TYP MAX UNIT -50 -50 V V V nA nA 400 -0.2 -0.5 -1 -1 400 V V MHz QW-R201-001,A @vic PNP EPITAXIAL SILICON TRANSISTOR AV5401 (continued) PARAMETER SYMBOL TEST CONDITIONS Output capacitance Cob Noise Figure NF VCB=-10V,IE=0 f=1MHz Ic=-0.25mA,VCE=-5V Rs=1kΩ,f=10Hz to 15.7kHz MIN TYP MAX UNIT 6.0 pF 8 dB Note: Pulse test: PW<300µs, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 B 150-240 C 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.1 Collector output Capacitance Fig.2 DC current Gain f=1MHz IE=0 12 8 4 0 -10 1 -10 2 -10 2 10 1 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector-Base voltage (V) Ic,Collector current (mA) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product VCE=-5V 2 -10 1 -10 0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-Emitter voltage (V) 3 10 1 -10 Current Gain-bandwidth product,fT(MHz) Ic=10*IB Saturation voltage (V) VCE=-5V 0 10 0 3 -10 Ic,Collector current (mA) HFE, DC current Gain Cob,Capacitance (pF) 16 VBE(sat) 0 -10 -1 -10 VCE(sat) -2 -10 Fig.3 Base-Emitter on Voltage 3 10 20 -1 -10 0 -10 1 -10 2 -10 Ic,Collector current (mA) 3 -10 VCE=-10V 2 10 1 10 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Ic,Collector current (mA) QW-R201-001,A