Avic AV5401 Pnp epitaxial silicon transistor Datasheet

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PNP EPITAXIAL SILICON TRANSISTOR
AV5401
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
VCEO=-150V
*Collector Dissipation:
Pc(max)=625mW
*High current gain
1
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
-160
-150
-5
625
-600
150
-55 ~ +150
V
V
V
mW
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Base-emitter saturation voltage
VBE(sat)
Current gain bandwidth product
fT
Ic=-100µA,IE=0
Ic=-1mA,IB=0
IE=-10µA,Ic=0
VCB=-120V,IE=0
VEB=-3V,Ic=0
VCE=-5V,Ic=-1mA
VCE=-5V,Ic=-10mA
VCE=-5V,Ic=-50mA
Ic=-10mA,IB=-1mA
Ic=-50mA,IB=-5mA
Ic=-10mA,IB=-1mA
Ic=-50mA,IB=-5mA
VCE=-10V,Ic=-10mA,f=100MHz
-160
-150
-6
Collector-emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
80
80
80
100
TYP
MAX
UNIT
-50
-50
V
V
V
nA
nA
400
-0.2
-0.5
-1
-1
400
V
V
MHz
QW-R201-001,A
@vic
PNP EPITAXIAL SILICON TRANSISTOR
AV5401
(continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Output capacitance
Cob
Noise Figure
NF
VCB=-10V,IE=0
f=1MHz
Ic=-0.25mA,VCE=-5V
Rs=1kΩ,f=10Hz to 15.7kHz
MIN
TYP
MAX
UNIT
6.0
pF
8
dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
C
200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Collector output
Capacitance
Fig.2 DC current Gain
f=1MHz
IE=0
12
8
4
0
-10
1
-10
2
-10
2
10
1
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector-Base voltage (V)
Ic,Collector current (mA)
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
VCE=-5V
2
-10
1
-10
0
-10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base-Emitter voltage (V)
3
10
1
-10
Current Gain-bandwidth
product,fT(MHz)
Ic=10*IB
Saturation voltage (V)
VCE=-5V
0
10
0
3
-10
Ic,Collector current (mA)
HFE, DC current Gain
Cob,Capacitance (pF)
16
VBE(sat)
0
-10
-1
-10
VCE(sat)
-2
-10
Fig.3 Base-Emitter on Voltage
3
10
20
-1
-10
0
-10
1
-10
2
-10
Ic,Collector current (mA)
3
-10
VCE=-10V
2
10
1
10
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Ic,Collector current (mA)
QW-R201-001,A
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