BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 (3.1) .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges. .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 voltage and fast switching. Top View MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAS40-04 Marking: 44 BAS40 Marking: 43 3 3 Top View 1 2 BAS40-05 Marking: 45 1 2 BAS40-06 Marking: 46 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 40 V Forward Continuous Current at Tamb = 25 °C IF 2001) mA Surge Forward Current at tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation1) at Tamb = 25 °C Ptot 2001) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C 1) Device on fiberglass substrate, see layout 4/98 BAS40 THRU BAS40-06 ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit V(BR)R 40 – – V – 20 100 nA VF VF – – – – 380 1000 mV mV Capacitance at VR = 0 V, f = 1 MHz Ctot – 4.0 5 pF Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA trr – – 5 ns Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W Reverse Breakdown Voltage Tested with 10 µA Pulses Leakage Current Pulse Test tp < 300 µs at VR = 30 V IR Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 40 mA 1) Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)