BCD AP2128K-1.0TRG1 300ma high speed, extremely low noise cmos ldo regulator Datasheet

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
General Description
Features
The AP2128 Series are positive voltage regulator ICs
fabricated by CMOS process. The AP2128 provides
two kinds of output voltage operation modes for
setting the output voltage. Fixed output voltage mode
senses the output voltage on VOUT, adjustable output
·
·
Wide Operating Voltage: 2.5V to 6V
Low Dropout Voltage:170mV@300mA for
VOUT=3.3V, 140mV@300mA for VOUT=5.2V
·
·
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
68dB@ f=1kHz, 54dB@ f=10kHz
Low Standby Current: 0.1µA
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µVrms@VOUT=0.8V
voltage mode needs two resistors as a voltage divider
·
·
·
The AP2128 Series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
AP2128 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V,
3.3V, 3.9V, 4.2V, 4.75V, 5.2V fixed voltage versions
and 0.8V to 5.5V adjustable voltage version.
AP2128 series are available in SOT-23-5 Package.
·
·
·
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
·
·
·
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
·
·
·
Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2128
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Pin Configuration
K Package
(SOT-23-5)
Shutdown
1
GND
2
VIN
3
5
ADJ/NC
4
VOUT
Figure 2. Pin Configuration of AP2128 (Top View)
Functional Block Diagram
SHUTDOWN
Shutdown
and
Logic Control
VIN
VREF
MOS Driver
Current Limint
And
Thermal
Protection
VOUT
GND
Fixed Version
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Functional Block Diagram (Continued)
SHUTDOWN
Shutdown
and
Logic Control
VIN
VREF
MOS Driver
Current Limint
And
Thermal
Protection
VOUT
ADJ
GND
Adjustable Version
Figure 3. Functional Block Diagram of AP2128
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Ordering Information
AP2128
G1: Green
Circuit Type
TR: Tape and Reel
Package
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
3.9: Fixed Output 3.9V
4.2: Fixed Output 4.2V
4.75: Fixed Output 4.75V
5.2: Fixed Output 5.2V
K: SOT-23-5
Product
AP2128
Package
SOT-23-5
Temperature
Range
o
-40 to 85 C
Part Number
Marking ID
Packing Type
AP2128K- ADJTRG1
FAD
Tape & Reel
AP2128K-1.0TRG1
FAJ
Tape & Reel
AP2128K-1.2TRG1
FAK
Tape & Reel
AP2128K-1.5TRG1
GAN
Tape & Reel
AP2128K-1.8TRG1
GAP
Tape & Reel
AP2128K-2.5TRG1
GAQ
Tape & Reel
AP2128K-2.8TRG1
GAR
Tape & Reel
AP2128K-3.0TRG1
GAW
Tape & Reel
AP2128K-3.3TRG1
FAL
Tape & Reel
AP2128K-3.9TRG1
GBU
Tape & Reel
AP2128K-4.2TRG1
GAZ
Tape & Reel
AP2128K-4.75TRG1
GFZ
Tape & Reel
AP2128K-5.2TRG1
GAV
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Thermal Resistance
θJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
200
V
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2.5
6
V
Operating Junction Temperature Range
TA
-40
85
oC
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics
(AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Current Limit
Symbol
VREF
Conditions
VIN=2.5V
1mA≤IOUT≤300mA
VIN
IOUT(MAX)
ILIMIT
Min
Typ
Max
Unit
0.784
0.8
0.816
V
6
V
2.5
VIN=2.5V,
VOUT=98%×VOUT
300
VIN=2.5V
400
mA
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN=2.5V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VIN=2.5V to 6V
IOUT=30mA
0.06
%/V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
Soft Start Time
RMS Output Noise
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
ISHORT
VIN=2.5V, IOUT=0mA
60
90
µA
VIN=2.5V,
VSHUTDOWN in off mode
0.1
1.0
µA
Ripple 1Vp-p
VIN=3V
f=100Hz
68
dB
f=1KHz
68
dB
f=10KHz
54
dB
±100
ppm/oC
50
mA
50
µs
60
µVrms
IOUT=30mA, -40oC≤TA≤85oC
VOUT=0V
tUP
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz,
VOUT=0.8V
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
oC
150
oC/W
Shutdown Pull Down Resistance
Thermal Resistance
θJC
SOT-23-5
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Current Limit
Symbol
VOUT
Conditions
Min
VIN=2.5V
1mA≤IOUT≤300mA
VIN
IOUT(MAX)
ILIMIT
VIN=2.5V,
VOUT=98%×VOUT
Max
Unit
98%×
VOUT
102%×
VOUT
V
2.5
6
V
300
VIN=2.5V
Typ
400
mA
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN=2.5V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VIN=2.5V to 6V
IOUT=30mA
0.06
%/V
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
Soft Start Time
VDROP
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
ISHORT
VOUT=1.0V, IOUT=300mA
1400
1500
VOUT=1.2V, IOUT=300mA
1200
1300
VOUT=1.5V, IOUT=300mA
900
1000
VOUT=1.8V, IOUT=300mA
600
700
VIN=2.5V, IOUT=0mA
60
90
µA
VIN=2.5V,
VSHUTDOWN in off mode
0.1
1.0
µA
Ripple 1Vp-p
VIN=3V
mV
f=100Hz
68
dB
f=1KHz
68
dB
f=10KHz
54
dB
±100
ppm/oC
50
mA
50
µs
IOUT=30mA, -40oC≤TA≤85oC
VOUT=0V
tUP
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
oC
150
oC/W
Shutdown Pull Down Resistance
Thermal Resistance
θJC
SOT-23-5
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Current Limit
Symbol
VOUT
Conditions
Min
VIN=VOUT+1V
1mA≤IOUT≤300mA
VIN
IOUT(MAX)
ILIMIT
VIN-VOUT=1V,
VOUT=98%×VOUT
Max
Unit
98%×
VOUT
102%×
VOUT
V
2.5
6
V
300
VIN-VOUT=1V
Typ
400
mA
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V,
IOUT=30mA
0.06
%/V
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
VDROP
IQ
ISTD
PSRR
VOUT=2.5V, 2.8V, 3.0V, 3.3V,
3.9V, 4.2V, IOUT=300mA
170
VOUT=4.75V and 5.2V,
IOUT=300mA
140
300
VIN=VOUT+1V, IOUT=0mA
60
90
µA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Output Voltage
Temperature Coefficient
Short Current Limit
(∆VOUT/VOUT)
/∆T
ISHORT
mV
AP2128-2.5V to f=100Hz
4.2V, Ripple
f=1KHz
1Vp-p
VIN=VOUT+1V f=10KHz
68
f=100Hz
AP2128-4.75V ,
Ripple 0.5Vp-p f=1KHz
VIN=VOUT+1V
f=10KHz
63
f=100Hz
63
f=1KHz
63
f=10KHz
45
AP2128-5.2V ,
Ripple 0.5Vp-p
VIN=6V
IOUT=30mA, -40oC≤TA≤85oC
VOUT=0V
Oct. 2009 Rev. 1.8
300
68
54
63
dB
45
±100
ppm/oC
50
mA
BCD Semiconductor Manufacturing Limited
8
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Soft Start Time
Symbol
Conditions
Min
Typ
Max
Unit
µs
50
tUP
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
Thermal Shutdown Hysteresis
30
Thermal Resistance
θJC
SOT-23-5
Oct. 2009 Rev. 1.8
150
o
C
oC
o
C/W
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics
1.0
3.0
0.8
3.0
0.7
2.5
2.5
Output Voltage (V)
3.5
Output Voltge (V)
Output Voltage (V)
3.5
0.9
0.6
2.0
0.5
1.5
0.4
o
Tc=-40 C
o
TC=-40 C
o
Tc=25 C T =25oC
0.3
1.0
0.2
o
0.0
0.0
00
C
50
100
100
150
200
200
250
300
300
350
400
400
1.5
o
TC=-40 C
1.0
o
TC=25 C
o
Tc=85 C TC=125 C
=4.4V
Vin=2.5V,VV
IN
out=0.8V
0.5
0.1
2.0
450
o
TC=85 C
0.5
VIN=4.3V, VOUT=3.3V
0.0
0.0
500
500
0.1
0.2
Output Current
Current (V)
(mA)
Output
0.3
0.4
0.5
Output Current (A)
Figure 4. Output Voltage vs. Output Current
Figure 5. Output Voltage vs. Output Current
6.0
3.5
5.5
5.0
4.5
2.5
Output Voltage (V)
Output Voltage (V)
3.0
2.0
1.5
1.0
VIN=3.8V
0.5
VIN=6V
VIN=4.3V
0.2
0.3
0.4
3.0
2.5
2.0
o
TC=-40 C
1.5
o
TC=25 C
o
TC=85 C
0.5
0
0.1
3.5
1.0
TC=25 C, VOUT=3.3V
0.0
0.0
4.0
0.0
0.5
Output Current (A)
VIN=6V, VOUT=5.2V
0.0
0.1
0.2
0.3
0.4
0.5
Output Current (A)
Figure 6. Output Voltage vs. Output Current
Figure 7. Output Voltage vs. Output Current
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
180
240
220
TC=-40 C
200
TC=25 C
160
o
TC=-40 C
160
o
o
TC=25 C
140
o
TC=85 C
Dropout Voltage (mV)
Dropout Voltage (mV)
180
o
VOUT=3.3V
140
120
100
80
60
120
o
TC=85 C
VIN=6V, VOUT=5.2V
100
80
60
40
40
20
20
0
50
100
150
200
250
0
0.00
300
0.05
0.10
Output Current (mA)
0.15
0.20
0.25
0.30
Output Current (A)
Figure 8. Dropout Voltage vs. Output Current
Figure 9. Dropout Voltage vs. Output Current
0.20
160
150
0.18
140
0.16
120
Dropout Voltage (mV)
Dropout Voltage (V)
0.12
0.10
0.08
IOUT=10mA
0.06
IOUT=150mA
0.04
IOUT=300mA
-20
0
20
40
60
IOUT=150mA
110
IOUT=300mA
100
VIN=6V, VOUT=5.2V
90
80
70
60
50
40
30
20
VIN=4.3V, VOUT=3.3V
0.02
0.00
-40
IOUT=10mA
130
0.14
10
0
-40
80
o
-20
0
20
40
60
80
o
Case Temperature ( C)
Case Temperature ( C)
Figure 10. Dropout Voltage vs. Case Temperature
Figure 11. Dropout Voltage vs. Case Temperature
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
115
120
TC=-40 C
105
TC=25 C
o
100
TC=85 C
95
VIN=4.3V, VOUT=3.3V
110
TC=-40 C
105
TC=25 C
100
TC=85 C
95
VIN=2.5V, VOUT=0.8V
90
85
80
75
70
65
80
75
70
65
50
100
150
200
250
o
85
55
0
o
90
60
50
o
110
o
o
Quiescent Current (µA)
Quiescent Current (µA)
115
300
0
50
100
Output Current (mA)
150
200
250
300
Output Current (mA)
Figure 12. Quiescent Current vs. Output Current
Figure 13. Quiescent Current vs. Output Current
70
Quiescent Current (µA)
110
105
100
o
TC=-40 C
IOUT=0
68
o
TC=25 C
VIN=2.5V, VOUT=0.8V
66
o
TC=85 C
Quiescent Current (µA)
115
VIN=6V, VOUT=5.2V
95
90
85
64
62
60
58
56
54
80
52
75
0.00
0.05
0.10
0.15
0.20
0.25
50
-40
0.30
-20
0
20
40
60
80
100
120
o
Case Temperature ( C)
Output Current (A)
Figure 15. Quiescent Current vs. Case Temperature
Figure 14. Quiescent Current vs. Output Current
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
71
IOUT=0
70
74
VIN=4.3V, VOUT=3.3V
72
Quiescent Current (µA)
Quiescent Current (µA)
69
68
67
66
65
64
70
68
66
64
IOUT=0
62
63
62
-40
-20
0
20
40
60
80
100
VIN=6V, VOUT=5.2V
60
-40
120
-20
0
20
o
70
70
60
60
Quiescent Current (µA)
Quiescent Current (µA)
80
50
40
30
0
1.0
o
TC=25 C
VOUT=0.8V, IOUT=0
2.0
2.5
3.0
3.5
4.0
4.5
100
120
50
40
30
20
5.0
5.5
o
TC=25 C
IOUT=0, VOUT=3.3V
10
0
1.5
80
Figure 17. Quiescent Current vs. Case Temperature
80
10
60
Case Temperature ( C)
Figure 16. Quiescent Current vs. Case Temperature
20
40
o
Case Temperature ( C)
6.0
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 18. Quiescent Current vs. Input Voltage
Figure 19. Quiescent Current vs. Input Voltage
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
80
IOUT=0, VOUT=5.2V
70
V =2.5V, CIN=COUT=1µF
IN
IOUT=10mA, Vout=0.8V
0.806
60
Output Voltage (V)
Quiescent Current (µA)
0.807
o
TC=25 C
50
40
30
0.805
0.804
0.803
20
0.802
10
0
0
1
2
3
4
5
0.801
-40
6
-20
0
20
40
60
80
100
120
o
Case Temperature ( C)
Input Voltage (V)
Figure 20. Quiescent Current vs. Input Voltage
Figure 21. Output Voltage vs. Case Temperature
5.250
3.348
IOUT=10mA
3.346
3.344
5.235
Output Voltage (V)
Output Voltage (V)
VIN=6V, VOUT=5.2V
5.240
3.342
3.340
3.338
3.336
3.334
3.332
3.330
5.230
5.225
5.220
5.215
5.210
5.205
3.328
5.200
3.326
-40
IOUT=10mA
5.245
VIN=4.3V, VOUT=3.3V
-20
0
20
40
60
80
100
5.195
-40
120
-20
0
20
40
60
80
100
120
o
o
Case Temperature ( C)
Case Temperature ( C)
Figure 22. Output Voltage vs. Case Temperature
Figure 23. Output Voltage vs. Case Temperature
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
14
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
56
VIN=2.5V, VOUT=0.8V, CIN=COUT=1µF
34
VIN=6V, VOUT=5.2V
54
52
50
Short Current (mA)
Short Current (mA)
32
30
28
48
46
44
42
40
38
36
34
26
32
-40
-20
0
20
40
60
80
100
30
-40
120
-20
0
o
0.9
0.8
0.8
0.7
0.7
Output Voltge (V)
Output Voltge (V)
1.0
0.9
0.6
0.5
0.4
o
TC=-40 C
0.3
o
TC=25 C
0.2
VOUT=0.8V
1
2
3
4
5
80
100
120
6
0.6
0.5
0.4
o
TC=-40 C
0.3
o
TC=25 C
0.2
o
TC=85 C
0
60
Figure 25. Short Current vs. Case Temperature
1.0
0.0
40
Case Temperature ( C)
Figure 24. Short Current vs. Case Temperature
0.1
20
o
Case Temperature ( C)
o
TC=85 C
0.1
7
0.0
8
Input Voltage (V)
Figure 26. Output Voltage vs. Input Voltage (IOUT=0mA)
VOUT=0.8V
0
1
2
3
4
5
6
Input Voltage (V)
Figure 27. Output Voltage vs. Input Voltage (IOUT=300mA)
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
15
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
6
o
3.5
TC=-40 C
o
o
TC=25 C
2.5
TC=25 C
o
o
IOUT=0, VOUT=3.3V
2.0
1.5
1.0
TC=85 C
4
IOUT=0, VOUT=5.2V
3
2
1
0.5
0.0
0.0
o
TC=85 C
Output Voltage (V)
Output Voltage (V)
3.0
TC=-40 C
5
0.5
1.0
1.5
2.0
2.5
3.0
0
3.5
Input Voltage (V)
0
1
2
3
4
5
6
Input Voltage (V)
Figure 28. Output Voltage vs. Input Voltage
Figure 29. Output Voltage vs. Input Voltage
2.0
VOUT=0.8V
1.8
No heatsink
Power Dissipation (W)
1.6
1.4
IOUT
1.2
1.0
0.8
0.6
VOUT
0.4
0.2
0.0
-40
-20
0
20
40
60
80
100
120
o
Case Temperature( C)
Figure 30. Power Dissipation vs. Case Temperature
Figure 31. Load Transient
(Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V,
IOUT=10mA to 300mA)
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
16
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
IOUT
VIN
VOUT
VOUT
Figure 32. Load Transient
Figure 33. Line Transient
(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V
IOUT=10mA to 300mA)
(Conditions: IOUT=30mA, CIN=COUT=1µF,
VIN=2.5 to 3.5V, VOUT=0.8V)
VIN
VOUT
VShutdown
VOUT
Figure 34. Line Transient
Figure 35. Soft Start Time
(Conditions: IOUT=30mA, CIN=COUT=1µF,
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VIN=4 to 5V, VOUT=3.3V)
VShutdown=0 to 2V, VOUT=3.3V)
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
17
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
100
IOUT=10mA
90
IOUT=300mA
80
ripple=1Vpp, COUT=1µF, VOUT=0.8V
70
PSRR (dB)
VOUT
60
50
40
30
VShutdown
20
10
0
100
1000
10000
100000
Frequency (Hz)
Figure 36. Soft Start Time
(Conditions: IOUT=0mA, CIN=COUT=1µF,
Figure 37. PSSR vs. Frequency
VShutdown=0 to 2V, VOUT=0.8V)
100
70
IOUT=10mA
90
IOUT=300mA
80
70
50
60
PSRR (dB)
PSRR (dB)
60
ripple=1Vpp, COUT=1µF, VOUT=3.3V
50
40
30
20
40
30
20
10
0
100
1000
10000
10
100000
Frequency (Hz)
IOUT=10mA
IOUT=300mA
VOUT=5.2V, COUT=1µF, ripple=0.5Vpp
100
1k
10k
100k
Frequency (Hz)
Figure 39. PSRR vs. Frequency
Figure 38. PSRR vs. Frequency
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
18
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Application
VIN
VOUT
VIN
VOUT
AP2128
Shutdown
R1
ADJ
R2
CIN
1µF
COUT
1µF
GND
VOUT=0.8*(1+R1/R2) V
VOUT
VIN
VIN
VOUT
AP2128
Shutdown
CIN
1µF
COUT
1µF
GND
VOUT=1.0V to 5.2V
Figure 40. Typical Application of AP2128
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
19
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.100(0.004)
0.900(0.035)
1.300(0.051)
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
20
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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