Jiangsu CJU10N10 N-channel power mosfet Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU10N10
N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
100V
0.14Ω@10V
9.6A
GENERAL DESCRIPTION
The CJU10N10 provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
FEATURE
Excellent package for good heat dissipation
z
Ultra low gate charge
z
z
Low reverse transfer capacitance
Fast switching capability
z
z
Avalanche energy specified
APPLICATION
z Power switching application
MARKING
EQUIVALENT CIRCUIT
CJU10N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Symbol
Value
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current
ID
9.6
Pulsed Drain Current
IDM
38.4
Single Pulsed Avalanche Energy (note1)
EAS
150
mJ
Thermal Resistance from Junction to Ambient
RθJA
100
℃/W
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 ~+150
TL
260
Parameter
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
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1
Unit
V
A
℃
E,Feb,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
100
V
Zero gate voltage drain current
IDSS
VDS =100V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
2.0
2.5
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =5A
0.115
0.14
Ω
On characteristics (note2)
1.2
Dynamic characteristics (note 3)
Input capacitance
Ciss
690
Output capacitance
Coss
Reverse transfer capacitance
Crss
90
td(on)
11
VDS =25V,VGS =0V,f =1MHz
pF
120
Switching characteristics (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
VDD=30V, RG=2.5Ω, ID =2A,
7.4
VGS =10V
35
ns
tf
9.1
Total Gate Charge
Qg
15.5
nC
Gate-Source Charge
Qgs
3.2
nC
Gate-Drain Charge
Qgd
4.7
nC
VDS =30V,VGS =10V,ID =3A
Drain-Source Diode Characteristics
Drain-source diode forward voltage (note2)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
1.2
V
IS
9.6
A
ISM
38.4
A
VSD
VGS = 0V, IS =9A
Notes :
1.
IL=7A, VDD=50V, RG=25Ω,Starting TJ=25℃.
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
Guaranteed by design, not subject to production
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2
E,Feb,2016
Typical Characteristics
Transfer Characteristics
Output Characteristics
100
VGS=8V
Pulsed
VGS=4V
ID
10
DRAIN CURRENT
ID
DRAIN CURRENT
VDS=10V
VGS=6V
(A)
Pulsed
(A)
100
VGS=3V
1
10
Ta=25℃
1
VGS=2.5V
0.1
0.1
1
10
DRAIN TO SOURCE VOLTAGE
VDS
0.1
2.0
100
2.5
(V)
3.0
5.0
(V)
Ta=25℃
Pulsed
ID=5A
Pulsed
400
(mΩ)
160
140
RDS(ON)
VGS=10V
120
100
ON-RESISTANCE
(mΩ)
4.5
VGS
500
180
RDS(ON)
4.0
RDS(ON)—— VGS
RDS(ON) —— ID
200
ON-RESISTANCE
3.5
GATE TO SOURCE VOLTAGE
80
60
40
300
Ta=100℃
200
100
Ta=25℃
20
100
2000
4000
6000
DRAIN CURRENT
ID
8000
0
3.0
9600
(mA)
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
GATE TO SOURCE VOLTAGE
VGS
8.5
9.0
9.5
10.0
(V)
Threshold Voltage
IS —— VSD
4.0
9600
Pulsed
3.5
3.0
VTH
Ta=25℃
Ta=100℃
100
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (mA)
(V)
1000
10
1
2.5
ID=250uA
2.0
1.5
1.0
0.5
0.1
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
0.0
25
1200
VSD (mV)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
E,Feb,2016
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Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
M
N
L
L1
L2
V
ĭ
Dimensions In Millimeters
Max.
Min.
2.380
2.200
0.000
0.100
0.800
1.400
0.710
0.810
0.460
0.560
0.460
0.560
6.500
6.700
5.130
5.460
6.000
6.200
2.286 TYP.
4.327
4.727
1.778REF.
0.762REF.
9.800
10.400
2.9REF.
1.400
1.700
4.830 REF.
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.004
0.031
0.055
0.028
0.032
0.018
0.022
0.018
0.022
0.256
0.264
0.202
0.215
0.236
0.244
0.090 TYP.
0.170
0.186
0.070REF.
0.018REF.
0.386
0.409
0.114REF.
0.055
0.067
0.190 REF.
72 5 /6XJJHVWHG3DG/D\RXW
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E,Feb,2016
To-252(4R)-2L Tape and Reel
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