FST8320SM thru FST8340SM Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 80 A Features • High Surge Capability • Types from 20 V to 40V VRRM D61-3SM Package • Types up to 100V VRRM Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions FST8320SM FST78330SM FST8335SM Parameter Symbol Repetitive peak reverse voltage VRRM 20 30 RMS reverse voltage VRMS 14 21 DC blocking voltage VDC FST8340SM Unit 35 40 V 35 28 V 40 V 20 30 35 Continuous forward current IF TC ≤ 110 °C 80 80 80 80 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 800 800 800 800 A Operating temperature Storage temperature Tj Tstg -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Conditions Symbol Diode forward voltage VF Reverse current IR FST8320SM FST8330SM IF = 80 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C FST8335SM FST78340SM 0.65 1.5 500 0.65 1.5 500 0.65 1.5 500 0.65 1.5 500 1.2 1.2 1.2 1.2 Unit V mA Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W FST8320SM thru FST8340SM www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST8320SM thru FST8340SM Package dimensions and terminal configuration Product is marked with part number and terminal configuration. MINI MODE D61 - 3SM www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3