IRFP150N
®
Pb
IRFP150N
Pb Free Plating Product
100V,60A Heatsink N-Channel Type Power MOSFET
G
General
Fe
eatures
VDS=100V
V,ID=60A
Rdson≦30mΩ @VGS=10
0V
{
●
(Typ:25m
mΩ)
1. Gate
Extended
d Safe Operating Area
Low Reveerse transfer capacitancess
100% Sin
ngle Pulse avaalanche energgy Test
2. Drain
◀
{
▲
●
●
{
3. Source
A
Applicatio
on
Power sw
witching application
Load switch
S
D
G
E
Electrical
C
Character
ristics @ Taa=25℃
(unless otherwise sp
pecified)
a Limited Parameterss:
a)
SSymbol
VDSS
ID
IDM
VGS
Ptot
Tj
Eas
Param
meter
Drrain‐to‐Sourcce Breakdow
wn Voltage
Drrain Current (continuous)) at Tc=25℃
Drrain Current (pulsed)
Gaate to Sourcee Voltage
otal Dissipatio
on at Tc=25℃
℃
To
Max. Operating Junction Temperature
Sin
ngle Pulse Avvalanche Eneergy
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Value
100
60
240
+/‐25
300
175
750
Units
V
A
A
V
W
℃
mj
Page 1/3
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IRFP150N
®
b) Electrical Parameters:
Symbol
VDS
RDS(on)
VGS(th)
IDSS
IGSS(F)
IGSS(R)
Ciss
Coss
Crss
Qg
Qgs
Qgd
Symbol
td(on)
tr
Parameter
Drain‐source Voltage
Test Conditions
VGS =0V, ID=250µA
Static Drain‐to‐Source
on‐Resistance
Gated Threshold Voltage
VGS =10V, ID=30A
Zero Gate Voltage Drain
Current
Gated Body Leakage
Current
Gated Body Leakage
Current
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Parameter
Turn‐on Delay Time
tf
Symbol
ISD
2.0
Typ
120
Max
25
30
3.0
4.0
1.0
VGS = +25V,
100
VGS = ‐25V,
‐100
VGS =0V,
VDS=30V,
f=1.0MHZ
VDS=80V
ID=40A
VGS=10V
Min
Unit
V
VDS=100V, VGS = 0V
Test Conditions
VDD=35V,ID=10A
VGS=10V,RG=6Ω
Turn‐on Rise Time
td(off)
VDS= VGS, ID=250µA
Min
100
mΩ
V
µA
nA
nA
4200
440
218
pF
pF
92
25
31
nC
nC
nC
Typ
16
pF
Max
Unit
nS
26
nS
Turn‐off Delay Time
70
nS
Turn‐off Fall Time
71
nS
Parameter
S‐D Current(Body Diode)
Test Conditions
ISDM
Pulsed
VSD
Diode Forward Voltage
VGS =0V, IDS=40A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
TJ=25℃,IF=40A
di/dt=100A/us
Min
S‐D Current(Body Diode)
Typ
60
Max
Unit
A
240
A
1.3
V
82
nS
150
nC
*Pulse Test: Pulse Width <= 300µs, Duty Cycle< =2%
Symbol
Paramter
Typ
Units
RθJC
Junction‐to‐Case
0.6
℃/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/3
http://www.thinkisemi.com/
IRFP150N
®
Package In
P
nformatio
on
TO
O‐247 PACK
KAGE
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/3
http://www.thinkisemi.com/