TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • 100% avalanche tested D ! " G! G D S TO-247 ! " TO-3P " " ! S G DS Absolute Maximum Ratings Symbol Parameter FCH20N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) FCA20N60 Unit 600 V 20 12.5 A A 60 A ± 30 V 690 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 4.5 V/ns 208 1.67 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FCH20N60 / FCA20N60 Rev. A 1 Typ. Max. Unit -- 0.6 °C/W 0.24 -- -- 41.7 °C/W www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET SuperFET Device Marking Device Package Reel Size Tape Width Quantity FCH20N60 FCH20N60 TO-247 - - 30 FCA20N60 FCA20N60 TO-3P - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.15 0.19 Ω -- 17 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- VDD = 300V, ID = 20A RG = 25Ω VDS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF -- 1280 1665 pF -- 95 -- pF -- 65 85 pF 165 -- pF -- 62 135 ns -- 140 290 ns -- 230 470 ns -- 65 140 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC -- 13.5 18 nC -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time -- 530 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 20A dIF/dt =100A/µs -- 10.5 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 150°C 1 10 25°C -55°C 0 10 Note 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 0 10 2. 250µs Pulse Test 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 10 IDR , Reverse Drain Current [A] 0.4 RDS(ON) [O ], Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 150°C 0 25°C 10 Notes : 1. VGS = 0V 2. 250µs Pulse Test Note : TJ = 25°C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics 1.6 VDS = 100V Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd 8000 7000 Capacitance [pF] 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 9000 Coss 6000 5000 Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 3000 2000 1.2 Figure 6. Gate Charge Characteristics 10000 4000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Crss 1000 0 -1 10 0 10 VDS = 250V VDS = 400V 8 6 4 2 Note : ID = 20A 0 1 0 10 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FCH20N60 / FCA20N60 Rev. A 10 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 10 2 10 1 Operation in This Area is Limited by R DS(on) 20 ID, Drain Current [A] ID, Drain Current [A] 100 us 1 ms 10 ms DC 10 0 Notes : 1. TC = 25°C -1 10 2. TJ = 150°C 15 10 5 3. Single Pulse -2 10 10 0 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 N o te s : 1 . Z θ JC (t) = 0 .6 ? /W M a x. 0 .2 10 -1 2 . D u ty F a c to r , D = t 1 /t 2 0 .1 3 . T JM - T C = P D M * Z θ JC (t) 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 t2 -2 10 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH20N60 / FCA20N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 5 FCH20N60 / FCA20N60 Rev. A VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 7 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 8 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET TRADEMARKS