Fairchild FCA20N60 600v n-channel mosfet Datasheet

TM
FCH20N60 / FCA20N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• 100% avalanche tested
D
!
"
G!
G D
S
TO-247
! "
TO-3P
"
"
!
S
G DS
Absolute Maximum Ratings
Symbol
Parameter
FCH20N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
FCA20N60
Unit
600
V
20
12.5
A
A
60
A
± 30
V
690
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
4.5
V/ns
208
1.67
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FCH20N60 / FCA20N60 Rev. A
1
Typ.
Max.
Unit
--
0.6
°C/W
0.24
--
--
41.7
°C/W
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FCH20N60 / FCA20N60 600V N-Channel MOSFET
SuperFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH20N60
FCH20N60
TO-247
-
-
30
FCA20N60
FCA20N60
TO-3P
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 20A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.15
0.19
Ω
--
17
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 10A
gFS
Forward Transconductance
VDS = 40V, ID = 10A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
VDD = 300V, ID = 20A
RG = 25Ω
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
2370
3080
pF
--
1280
1665
pF
--
95
--
pF
--
65
85
pF
165
--
pF
--
62
135
ns
--
140
290
ns
--
230
470
ns
--
65
140
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 20A
VGS = 10V
(Note 4, 5)
--
75
98
nC
--
13.5
18
nC
--
36
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 20A
--
--
1.4
V
trr
Reverse Recovery Time
--
530
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/µs
--
10.5
--
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FCH20N60 / FCA20N60 Rev. A
www.fairchildsemi.com
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
2
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
150°C
1
10
25°C
-55°C
0
10
Note
1. VDS = 40V
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
0
10
2. 250µs Pulse Test
2
1
10
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
10
IDR , Reverse Drain Current [A]
0.4
RDS(ON) [O ],
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
0.3
VGS = 10V
0.2
VGS = 20V
0.1
1
10
150°C
0
25°C
10
Notes :
1. VGS = 0V
2. 250µs Pulse Test
Note : TJ = 25°C
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.2
0.4
0.6
0.8
Figure 5. Capacitance Characteristics
1.6
VDS = 100V
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Crss = Cgd
8000
7000
Capacitance [pF]
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
9000
Coss
6000
5000
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
3000
2000
1.2
Figure 6. Gate Charge Characteristics
10000
4000
1.0
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Crss
1000
0
-1
10
0
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 20A
0
1
0
10
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
FCH20N60 / FCA20N60 Rev. A
10
www.fairchildsemi.com
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 20 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
10
2
10
1
Operation in This Area
is Limited by R DS(on)
20
ID, Drain Current [A]
ID, Drain Current [A]
100 us
1 ms
10 ms
DC
10
0
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
15
10
5
3. Single Pulse
-2
10
10
0
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
ZθJC(t), Thermal Response
10
0
D = 0 .5
N o te s :
1 . Z θ JC (t) = 0 .6 ? /W M a x.
0 .2
10
-1
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P D M * Z θ JC (t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
10
t2
-2
10
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
FCH20N60 / FCA20N60 Rev. A
www.fairchildsemi.com
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FCH20N60 / FCA20N60 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
Time
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FCH20N60 / FCA20N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FCH20N60 / FCA20N60 Rev. A
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FCH20N60 / FCA20N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
FCH20N60 / FCA20N60 Rev. A
www.fairchildsemi.com
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
8
FCH20N60 / FCA20N60 Rev. A
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
9
FCH20N60 / FCA20N60 Rev. A
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FCH20N60 / FCA20N60 600V N-Channel MOSFET
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