Vishay BYG22D Ultrafast avalanche smd rectifier Datasheet

BYG22A thru BYG22D
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2A
VRRM
50 V to 200 V
IFSM
35 A
IR
1.0 µA
VF
1.1 V
trr
25 ns
ER
20 mJ
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for highreliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG22A
BYG22B
BYG22D
BYG22A
BYG22B
BYG22D
50
100
200
UNIT
V
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
35
A
ER
20
mJ
TJ, TSTG
- 55 to + 150
°C
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
Document Number: 88959
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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BYG22A thru BYG22D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG22A
BYG22B
BYG22D
UNIT
Maximum instantaneous
forward voltage (1)
IF = 1.0 A
IF = 2.0 A
TJ = 25 °C
VF
1.0
1.1
V
Maximum reverse current
VR = VRRM
TJ = 25 °C
TJ = 100 °C
IR
1
10
µA
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
BYG22B
BYG22D
UNIT
Maximum thermal resistance - junction lead TL = const.
RθJL
25
°C/W
Maximum thermal resistance - junction ambient
RθJA
150 (1)
125 (2)
100 (3)
°C/W
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYG22A-E3/TR
PREFERRED P/N
0.064
TR
1800
7" diameter plastic tape and reel
BYG22A-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG22AHE3/TR (1)
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
BYG22AHE3/TR3
(1)
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.5
Average Forward Current (A)
Forward Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
VR = VRRM
Half Sine-Wave
2.0
RθJA ≤ 25 K/W
1.5
RθJA ≤ 125 K/W
1.0
RθJA ≤ 150 K/W
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
160
Forward Voltage (V)
Ambient Temperature (°C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88959
Revision: 27-Aug-07
BYG22A thru BYG22D
Vishay General Semiconductor
100
140
TA = 125 °C
Reverse Recovery Time (ns)
Reverse Current (µA)
VR = VRRM
10
120
TA = 100 °C
100
TA = 75 °C
80
TA = 50 °C
60
40
TA = 25 °C
20
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
125
150
0
0.6
0.8
1.0
Forward Current (A)
Figure 3. Reverse Current vs. Junction Temperature
Figure 6. Max. Reverse Recovery Time vs. Forward Current
60
50
TA = 125 °C
VR = VRRM
Reverse Recovery Charge (nC)
Reverse Power Dissipation (mW)
0.4
0.2
Junction Temperature (°C)
40
30
PR - Limit
at 100 % VR
20
PR - Limit
at 80 % VR
10
50
TA = 100 °C
40
TA = 75 °C
30
TA = 50 °C
20
TA = 25 °C
10
IR = 0.5 A, iR = 0.125 A
0
0
25
50
75
100
125
0.2
0
150
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 7. Max. Reverse Recovery Charge vs. Forward Current
Thermal Resistance for Pulse Cond. (K/W)
Junction Temperature (°C)
70
f = 1 MHz
Diode Capacitance (pF)
60
50
40
30
20
10
0
0.1
1
10
100
1000
125 K/W DC
100
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
tp/T = 0.02
Single Pulse
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
Reverse Voltage (V)
Pulse Length (s)
Figure 5. Diode Capacitance vs. Reverse Voltage
Figure 8. Thermal Response
Document Number: 88959
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
101
102
www.vishay.com
3
BYG22A thru BYG22D
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88959
Revision: 27-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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