APT41F100J 1000V, 41A, 0.21Ω Max, trr ≤400ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT19F100J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 41 Continuous Drain Current @ TC = 100°C 26 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 4075 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 33 A 1 260 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m 3-2007 TJ,TSTG 0.15 Rev A Min Characteristic 050-8128 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 1000 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1000V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Min Test Conditions VDS = 50V, ID = 33A f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 75 18500 245 1555 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related µA nA Unit S pF 635 VGS = 0V, VDS = 0V to 667V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf 0.21 5 Unit V V/°C Ω V mV/°C TJ = 25°C unless otherwise specified 4 td(off) Max 250 1000 ±100 TJ = 125°C VGS = ±30V Co(cr) tr 0.19 4 -10 TJ = 25°C VGS = 0V Parameter gfs 3 VGS = VDS, ID = 5mA Threshold Voltage Temperature Coefficient Typ 1.15 VGS = 10V, ID = 33A 3 IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) APT41F100J Current Rise Time Turn-Off Delay Time 325 570 100 270 55 55 235 55 VGS = 0 to 10V, ID = 33A, VDS = 500V Resistive Switching VDD = 667V, ID = 33A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 260 S 1.0 400 800 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 41 G ISD = 33A, TJ = 25°C, VGS = 0V ISD = 33A 3 Max TJ = 125°C ISD ≤ 33A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C 3.3 8.0 17.2 24.6 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 7.48mH, RG = 2.2Ω, IAS = 33A. 050-8128 Rev A 3-2007 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -5.37E-7/VDS^2 + 9.48E-8/VDS + 1.83E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 180 V GS = 10V J 140 120 100 80 TJ = 25°C 60 40 TJ = 150°C GS 40 30 5V 20 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ID, DRAIN CURRENT (A) 200 2.0 1.5 1.0 0.5 150 30,000 80 10,000 TJ = -55°C 60 TJ = 25°C 50 TJ = 125°C 40 30 20 TJ = 25°C TJ = 125°C 50 90 70 TJ = -55°C 100 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature C, CAPACITANCE (pF) 0 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss 1000 Coss 100 Crss 10 1000 800 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 250 ID = 33A 14 0 10 40 200 150 TJ = 25°C 100 TJ = 150°C 50 0 1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 3-2007 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current Rev A 0 ISD, REVERSE DRAIN CURRENT (A) 0 050-8128 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE gfs, TRANSCONDUCTANCE 250 VGS = 10V @ 33A 2.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V V 10 TJ = 125°C 20 0 T = 125°C 50 TJ = -55°C ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 160 APT41F100J 60 100 100 I DM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT41F100J 300 300 10 13µs 100µs 1ms Rds(on) 1 10ms 100ms I DM 13µs 10 100µs Rds(on) TJ = 150°C TC = 25°C 1 0.1 C ° 1000 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1000 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area TJ (°C) 1 TC (°C) 0.0270 0.102 Dissipated Power (Watts) 0.0767 ZEXT 1 10ms 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 DC line 0.1 1ms 1.04 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 11, Transient Thermal Impedance Model D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: 0.3 0.04 t1 t2 0.02 0 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 t1 = Pulse Duration t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3-2007 14.9 (.587) 15.1 (.594) Rev A 3.3 (.129) 3.6 (.143) 38.0 (1.496) 38.2 (1.504) 050-8128 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.