E-CMOS EC733616 30v,9a,n-channel mosfet Datasheet

EC733616
30V,9A,N-Channel MOSFET
Description
The EC733616 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Features and Benefits:
SSF3616
◆ VDS = 30V,ID =9A
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 18.5mΩ @ VGS=10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
◆ PWM applications
◆ Load switch
◆ Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±25
V
ID(25℃)
9
A
ID(70℃)
7
IDM
40
A
PD
2.5
W
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4J01N-Rev.F002
EC733616
30V,9A,N-Channel MOSFET
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.3
1.8
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=7A
21
30
mΩ
VGS=10V, ID=9A
16
18.5
mΩ
VDS=15V,ID=9A
10
S
600
PF
75
PF
OFF CHARACTERISTICS
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.8
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
45
PF
Turn-on Delay Time
td(on)
4
nS
Turn-on Rise Time
tr
VDS=15V,VGS=10V,RGEN=6Ω
12
nS
td(off)
ID=1A
22
nS
4
nS
12
nC
1.2
nC
3.8
nC
13
nS
7
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
Body Diode Reverse Recovery Charge
Qrr
VDS=15V,ID=9A,VGS=10V
IF=9A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=3A
0.7
1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2
2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4J01N-Rev.F002
V
30V,9A,N-Channel MOSFET
EC733616
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
4J01N-Rev.F002
30V,9A,N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
EC733616
4J01N-Rev.F002
30V,9A,N-Channel MOSFET
EC733616
Ordering and Marking Information
EC733616 XX X
R:Tape & Reel
M1=SOP 8L
E-CMOS Corp. (www.ecmos.com.tw)
Part Number
Package
Marking
EC733616M1R
SOP 8L
SSF3616
Page 5 of 6
4J01N-Rev.F002
30V,9A,N-Channel MOSFET
EC733616
SOP 8L Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
4J01N-Rev.F002
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