NTE3120 Silicon NPN Phototransistor Detector Features: D High Sensitivity D GaAs LED–Wide Spectral Range, with GaAs LED. D Low Dark Current D Side–View Plastic Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Collector Dissipation PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +100°C Electro–Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 0.01 1.0 µA Dark Current ICEO VCE = 10V – Photo Current ICE(L) VCE = 10V, L = 500 1x, Note 1 1 3 – mA Peak Sensitivity Wavelength λP VCE = 10V – 800 – nm Acceptance Half Angle q Note 2 – 35 – deg Rise Time tr – 4 10 µs Fall Time tf VCC = 10V, ICE(L) = 5mA, RL = 100Ω Ω – 4 10 µs – 0.2 0.5 V Collector–Emitter Saturation Voltage VCE(sat) ICE(L) = 1mA, L = 1000 1x, Note 1 Note 1. Source: Tungsten 2856 °K. Note 2. The angle when the light current is halved. .177 (4.49) Max .075 (1.9) .189 (4.8) Max .090 (2.28) .189 (4.8) Note .095 (2.41) .138 (3.5) .110 (2.79) .504 (12.8) Min .394 (10.0) Min .097 (2.46) E C .100 (2.54) .047 (1.19) .059 (1.5) R E C Note: Not Soldered