MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD (3 TYP.) N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 4.25 B 3.66±0.01 Dimensions Inches Millimeters 108.0 J 0.59 15.0 93.0±0.25 K 0.55 14.0 Millimeters C 2.44 62.0 L 0.30 8.5 D 1.89±0.01 48.0±0.25 M 0.28 7.0 E 1.22 Max. 31.0 Max. N 0.256 Dia. Dia. 6.5 F 0.98 25.0 P 0.24 6.0 G 0.85 21.5 Q M6 Metric M6 H 0.60 15.2 R 0.20 5.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DY-12H is a 600V (VCES), 400 Ampere Dual IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 12 Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DY-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 1500 Watts Mounting Torque, M6 Main Terminal – 1.96 ~ 2.94 N·m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m – 400 Grams Viso 2500 Vrms Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – Gate Leakage Current IGES VGE = VGES, VCE = 0V – Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V – IC = 400A, VGE = 15V, Tj = 150°C Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V Emitter-Collector Voltage VEC IE = 400A, VGE = 0V Typ. Max. Units – 1.0 mA – 0.5 µA 6.0 7.5 Volts 2.1 2.8** Volts – 2.15 – Volts – 1200 – nC – – 2.8 Volts Min. Typ. Max. Units – – 40 nF – – 14 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres – – 8 nF Resistive td(on) – – 350 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 300V, IC = 400A, – – 600 ns td(off) VGE1 = VGE2 = 15V, RG = 1.6Ω – – 350 ns – – 300 ns Diode Reverse Recovery Time trr tf IE = 400A, diE/dt = –800A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = –800A/µs – 1.08 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.085 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.18 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.045 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE 800 600 11 400 10 200 9 7 VCE = 10V Tj = 25°C Tj = 125°C 600 400 200 8 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 0 20 200 400 600 800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 Tj = 25°C 8 IC = 800A 6 IC = 400A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 102 Cies 101 Coes Cres 100 VGE = 0V IC = 160A 101 0 4 8 12 16 0 20 1.6 2.4 3.2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) tf td(on) 102 tr VCC = 300V VGE = ±15V RG = 1.6Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 di/dt = -800A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE Irr t rr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 101 0.8 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.085°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.18°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998