RoHS RoHS NKT90A/NKH90A Series SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 90A (ADD-A-PAK Power Modules) 80 3 21 5.6 5 4 ADD-A-PAK 13.6 7 2 6 1 2-Ø6.4 15 20 20 15 92 FEATURES • High voltage 68 3-M5 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) 4-2.8x0.8 18 31 • Industrial standard package 5 6 • High surge capability 29.5 • 3000 V RMS isolating voltage • Glass passivated chips • Modules uses high voltage power thyristor/diodes in two basic configurations • Simple mounting All dimensions in millimeters • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS (6) (7) NKT • DC motor control and drives (5) (4) • Battery charges • Welders • Power converters NKH • Lighting control (5) (4) • Heat and temperature control PRODUCT SUMMARY 90 A IT(AV) MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUE CHARACTERISTICS IT(AV) 85 °C IT(RMS) 85 °C 141 50 Hz 2000 60 Hz 2100 50 Hz 20 60 Hz 18.3 ITSM /IFSM I2t 90 I2√t 200 UNITS A A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 NKT90A/NKH90A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKT90..A NKH90..A IRRM /I DRM AT 125 °C mA 10 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM t = 10 ms I 2t UNITS 90 A 85 °C 141 2000 t = 8.3 ms No voltage reapplied t = 10 ms Maximum I 2t for fusing VALUE t = 8.3 ms 2100 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms A 20 18.3 kA2s 14 12.8 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 200 Maximum on-state voltage drop VTM ITM = 270A , TJ = 25 °C, 180° conduction 1.6 Maximum forward voltage drop VFM IFM = 270A , TJ = 25 °C, 180° conduction 1.3 kA2√s V Maximum holding current IH Anode supply = 6 V,resistive load, TJ = 25 °C 150 Maximum latching current IL Anode supply = 6 V resistive load, TJ = 25 °C 400 SYMBOL TEST CONDITIONS VALUES UNITS 10 mA mA BLOCKING PARAMETER Maximum peak reverse and off-state leakage current IRRM IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 2500 (1min) 3000 (1s) 500 V V/μs NKT90A/NKH90A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak negative gate voltage - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V Maximum required DC gate voltage to trigger VGT 0.7~1.6 Anode supply = 6 V, resistive load; Ra = 1 Ω TJ = 25 °C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 20~100 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.28 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.077 °C °C/W AAP to heatsink, M6 Mounting torque ± 10 % busbar to AAP, M5 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Approximate weight 4 N.m 120 g 4.23 oz. ADD-A-PAK Case style ORDERING INFORMATION TABLE Device code www.nellsemi.com UNITS NK T 90 1 2 3 / 16 A 4 5 1 - Module type 2 - Circuit configuration 3 - Current rating: IT(AV) 4 - Voltage code x 100 = V RRM 5 - Assembly type,”A” for soldering type Page 3 of 4 NKT90A/NKH90A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Peak On-state Voltage vs. Peak On-state Current Fig.2 Max. Thermal Impedance (Junction To case) Vs. Time 0.3 3.8 Thermal impedance (°C/W) Peak On-state voltage (V) 3.4 3 2.6 2.2 1.8 1.4 1 0.25 0.2 0.15 0.1 0.05 0 0.6 10 100 1000 0.001 0.01 0.1 Peak On-state Current (A) Time (s) Fig.3 Power Dissipation Vs. Average On-state Current Fig.4 Case Temperature Vs. Average O n-state Current 140 180° 200 90° 120° 60° 150 30° 100 Case Temperature (°C) 250 Power Dissipation (W) 10 1 120 100 80 60 40 50 0 30 0 60 0 120 90 60° 30° 20 30 0 60 90° 120 90 120° 180° 150 180 2 5 Average On-state current (A) Fig.5 Surge On-state Current Vs. Cycles Fig.6 Gate characteristics 2 2 1.8 10¹ Gate voltage (V) Surge On-state current (KA) 2.2 1.6 1.4 1.2 1 0.8 2 10º 5 2 0.6 0.4 5 1 10 100 2 5 10² 2 5 10³ Gate current (mA) Time(cycles) www.nellsemi.com 10¯¹ 10¹ Page 4 of 4