BAS21TMR6 High Voltage Switching Diode The BAS21TMR6T1G device houses three high−voltage switching diodes in a SC−74 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • Reduces Board Space • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 250 V HIGH VOLTAGE SWITCHING DIODE 6 5 4 1 2 3 MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 250 Vdc Forward Current IF 200 mAdc IFM(surge) 625 mAdc Rating Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 4 6 5 1 2 Symbol Max Unit 311 2.5 mW mW/°C 402 °C/W 347 2.8 mW mW/°C RJA 360 °C/W TJ, Tstg −55 to +150 °C PD RJA SC−74 CASE 318F 3 MARKING DIAGRAM RAA MG G PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 10 mm2, 2 oz copper traces 2. FR−4 @ 25 mm2, 2 oz copper traces RAA M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS21TMR6T1G SC−74 (Pb−Free) 3000 / Tape & Reel NSVBAS21TMR6T1G SC−74 (Pb−Free) 3000 / Tape & Reel NSVBAS21TMR6T2G SC−74 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 1 1 Publication Order Number: BAS21TMR6/D BAS21TMR6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Min Max Unit Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) − − 0.1 100 250 − − − 1.0 1.25 Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS21TMR6 TYPICAL CHARACTERISTICS 10 150°C 100 IR , REVERSE CURRENT (μA) 125°C 85°C 10 55°C 25°C 1.0 -55°C 125°C 1.0 85°C 0.1 55°C 0.01 25°C -40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 0.001 20 1.0 50 80 170 200 110 140 VR, REVERSE VOLTAGE (V) Figure 2. VF vs. IF Figure 3. IR vs. VR 1.6 Cap CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 1.4 1.2 1.0 0.8 0.6 0.4 0 1 2 3 4 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 6 7 8 230 260 BAS21TMR6 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D 6 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. E HE 1 DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 − 10° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° L A1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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