JIEJIE JST24E-800CW 25a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JST24 Series
25A TRIACs
Rev.3.0
DESCRIPTION:
JST24 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances,
3 quadrants products especially recommended for
use on inductive load.
JST24A provides insulation voltage rated at 2500V
RMS and JST24F provides insulation voltage rated
12
3
TO-220A 1
TO-220B
2 3
Insulated
Non-Insulated
2
12
at 2000V RMS from all three terminals to external
heatsink complying with UL standards (File ref:
E252906).
3
TO-220F
Insulated
1
3
TO-263
T1(1)
G(3)
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
25
A
VDRM /VRRM
600 and 800 and 1200
V
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage (Tj=25℃)
VDRM
600/800/1200
V
Repetitive peak reverse voltage (Tj=25℃)
VRRM
600/800/1200
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
25
A
Storage junction temperature range
Operating junction temperature range
RMS on-state
current
TO-220A(Ins)/
TO-220F(Ins) (TC=75℃)
TO-220B(Non-Ins)
(TC=90℃)
TO-263 (TC=100℃)
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JST24 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG =2×IGT)
Peak gate current
Average gate power dissipation
Peak gate power
ITSM
250
A
I2t
340
A2s
dI/dt
50
A/μs
IGM
4
A
PG(AV)
1
W
PGM
10
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
VDRM /VRRM: 600/800V
JST24-600/800V
Symbol
IGT
VGT
VGD
Test Condition
VD =12V RL =33Ω
VD =VDRM Tj =125℃
RL =3.3KΩ
Quadrant
Unit
50
35
MAX
Ⅰ-Ⅱ-Ⅲ
MAX
1.3
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
mA
80
70
100
80
MAX
75
50
mA
VD=2/3VDRM Gate Open Tj =125℃
MIN
1000
500
V/μs
Without snubber Tj=125℃
MIN
22
13
V/μs
IG =1.2IGT
IH
IT =100mA
(dV/dt)c
CW
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
IL
dV/dt
BW
MAX
Ⅱ
mA
VDRM /VRRM: 1200V
JST24-1200V
Symbol
IGT
VGT
VGD
Test Condition
VD =12V RL=33Ω
VD =VDRM Tj =125℃
RL =3.3KΩ
Quadrant
Unit
IG =1.2IGT
IH
IT =100mA
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CW
50
35
Ⅰ-Ⅱ-Ⅲ
MAX
Ⅰ-Ⅱ-Ⅲ
MAX
1.5
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
IL
BW
90
70
100
80
80
60
MAX
Ⅱ
MAX
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mA
mA
mA
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JST24 Series
dV/dt
(dV/dt)c
JieJie Microelectronics CO. , Ltd
VD=2/3VDRM Gate Open Tj=125℃
MIN
1500
1000
V/μs
Without snubber Tj=125℃
MIN
30
20
V/μs
Value(MAX)
Unit
Tj=25℃
1.5
V
Tj=25℃
5
μA
Tj=125℃
3
mA
Value
Unit
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM =35A tp=380μs
VD =VDRM VR =VRRM
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-220A(Ins)
3.9
TO-220B(Non-Ins)
1.2
TO-220F(Ins)
3.3
TO-263
0.85
℃/W
junction to case(AC)
ORDERING INFORMATION
J
ST
24
A
JieJie Microelectronics Co.,Ltd
Triacs
IT(RMS):25A
E:TO-263
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
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-600
BW
BW:IGT3≤50mA
CW:IGT3≤35mA
600:VDRM /VRRM≥600V
800:VDRM /VRRM≥800V
1200:VDRM /VRRM≥1200V
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JST24 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
3
ax
E
A
M
Millimeters
Min.
C2
H
D
V1
L3
F
Φ
m
.8
m
L1
C3
L2
Max.
4.60
0.173
0.181
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.80
10.4
0.386
0.409
F
6.55
6.95
0.258
2.54
28.0
0.274
0.1
29.8
1.102
3.75
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
45°
V1
TO-220A Ins
Typ.
4.40
L1
C
Min.
A
H
G
Max.
B
G
B
Typ.
Inches
45°
Dimensions
Ref.
x
E
A
C2
D
V1
L3
H
JIE
C3
L1
Millimeters
Min.
F
Φ
Ma
mm
3.8
L2
TO-220B Non-Ins
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Typ.
Max.
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
H
C
Min.
4.40
2.54
G
B
Inches
Max.
A
28.0
0.1
29.8
1.102
3.75
L1
G
Typ.
L2
1.14
L3
2.65
V1
- 4 / 6-
45°
1.173
0.148
1.70
0.045
2.95
0.104
0.067
0.116
45°
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JST24 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
E
3.
Min.
A
C2
F
L3
Φ
ax
M
m
5m
H
D
V1
L1
C3
L2
C
TO-220F Ins
Max.
4.80
0.173
0.80
0.83
0.029
0.75
0.019
Min.
Typ.
Max.
4.40
0.74
C
0.48
C2
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
0.189
0.031
0.033
0.030
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
29.8
1.102
2.54
28.0
0.1
3.63
L1
L2
G
Typ.
A
G
B
Inches
B
H
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Millimeters
0.143
1.70
1.14
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
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JST24 Series
JieJie Microelectronics CO. , Ltd
FIG.1: Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
30
P(w)
36
α=180°
TO-220B(Non-Ins)
25
27
18
TO-263
TO-220A(Ins)/
TO-220F(Ins)
20
15
10
9
5
0
0
IT(RMS) (A)
10
15
5
20
25
FIG.3: Surge peak on-state current versus
number of cycles
Tc (℃)
0
0
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
200
300
t=20ms
One cycle
100
240
Tj=125℃
180
10
120
Tj=25℃
60
Number of cycles
10
100
0
1
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t (dI/dt < 50A/μs)
ITSM (A), I2 t (A2 s)
4000
1
0
1
2
VTM (V)
3
4
5
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)
3.0
2.5
1000
2.0
ITSM
IGT
dI/dt
1.5
2
It
IH&IL
1.0
0.5
100
0.01
tp(ms)
0.1
1
10
20
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 20-July-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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