JIEJIE MICROELECTRONICS CO. , Ltd JST24 Series 25A TRIACs Rev.3.0 DESCRIPTION: JST24 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. JST24A provides insulation voltage rated at 2500V RMS and JST24F provides insulation voltage rated 12 3 TO-220A 1 TO-220B 2 3 Insulated Non-Insulated 2 12 at 2000V RMS from all three terminals to external heatsink complying with UL standards (File ref: E252906). 3 TO-220F Insulated 1 3 TO-263 T1(1) G(3) MAIN FEATURES Symbol Value Unit IT(RMS) 25 A VDRM /VRRM 600 and 800 and 1200 V T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1200 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1200 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 25 A Storage junction temperature range Operating junction temperature range RMS on-state current TO-220A(Ins)/ TO-220F(Ins) (TC=75℃) TO-220B(Non-Ins) (TC=90℃) TO-263 (TC=100℃) TEL：+86-513-83639777 - 1 / 6- http://www.jjwdz.com JST24 Series JieJie Microelectronics CO. , Ltd Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Peak gate power ITSM 250 A I2t 340 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W PGM 10 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) VDRM /VRRM: 600/800V JST24-600/800V Symbol IGT VGT VGD Test Condition VD =12V RL =33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant Unit 50 35 MAX Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V mA 80 70 100 80 MAX 75 50 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 500 V/μs Without snubber Tj=125℃ MIN 22 13 V/μs IG =1.2IGT IH IT =100mA (dV/dt)c CW Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅲ IL dV/dt BW MAX Ⅱ mA VDRM /VRRM: 1200V JST24-1200V Symbol IGT VGT VGD Test Condition VD =12V RL=33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant Unit IG =1.2IGT IH IT =100mA TEL：+86-513-83639777 CW 50 35 Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MAX 1.5 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ IL BW 90 70 100 80 80 60 MAX Ⅱ MAX - 2 / 6- mA mA mA http://www.jjwdz.com JST24 Series dV/dt (dV/dt)c JieJie Microelectronics CO. , Ltd VD=2/3VDRM Gate Open Tj=125℃ MIN 1500 1000 V/μs Without snubber Tj=125℃ MIN 30 20 V/μs Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=125℃ 3 mA Value Unit STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM =35A tp=380μs VD =VDRM VR =VRRM THERMAL RESISTANCES Symbol Rth(j-c) Parameter TO-220A(Ins) 3.9 TO-220B(Non-Ins) 1.2 TO-220F(Ins) 3.3 TO-263 0.85 ℃/W junction to case(AC) ORDERING INFORMATION J ST 24 A JieJie Microelectronics Co.,Ltd Triacs IT(RMS):25A E:TO-263 A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) TEL：+86-513-83639777 - 3 / 6- -600 BW BW:IGT3≤50mA CW:IGT3≤35mA 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V 1200:VDRM /VRRM≥1200V http://www.jjwdz.com JST24 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. 3 ax E A M Millimeters Min. C2 H D V1 L3 F Φ m .8 m L1 C3 L2 Max. 4.60 0.173 0.181 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.80 10.4 0.386 0.409 F 6.55 6.95 0.258 2.54 28.0 0.274 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 45° V1 TO-220A Ins Typ. 4.40 L1 C Min. A H G Max. B G B Typ. Inches 45° Dimensions Ref. x E A C2 D V1 L3 H JIE C3 L1 Millimeters Min. F Φ Ma mm 3.8 L2 TO-220B Non-Ins TEL：+86-513-83639777 Typ. Max. 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 H C Min. 4.40 2.54 G B Inches Max. A 28.0 0.1 29.8 1.102 3.75 L1 G Typ. L2 1.14 L3 2.65 V1 - 4 / 6- 45° 1.173 0.148 1.70 0.045 2.95 0.104 0.067 0.116 45° http://www.jjwdz.com JST24 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. E 3. Min. A C2 F L3 Φ ax M m 5m H D V1 L1 C3 L2 C TO-220F Ins Max. 4.80 0.173 0.80 0.83 0.029 0.75 0.019 Min. Typ. Max. 4.40 0.74 C 0.48 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 0.189 0.031 0.033 0.030 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 29.8 1.102 2.54 28.0 0.1 3.63 L1 L2 G Typ. A G B Inches B H TEL：+86-513-83639777 Millimeters 0.143 1.70 1.14 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 5 / 6- http://www.jjwdz.com JST24 Series JieJie Microelectronics CO. , Ltd FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 30 P(w) 36 α=180° TO-220B(Non-Ins) 25 27 18 TO-263 TO-220A(Ins)/ TO-220F(Ins) 20 15 10 9 5 0 0 IT(RMS) (A) 10 15 5 20 25 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 200 300 t=20ms One cycle 100 240 Tj=125℃ 180 10 120 Tj=25℃ 60 Number of cycles 10 100 0 1 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and 2 corresponging value of I t (dI/dt < 50A/μs) ITSM (A), I2 t (A2 s) 4000 1 0 1 2 VTM (V) 3 4 5 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃) 3.0 2.5 1000 2.0 ITSM IGT dI/dt 1.5 2 It IH&IL 1.0 0.5 100 0.01 tp(ms) 0.1 1 10 20 0.0 -40 Tj (℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 20-July-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 6 / 6- http://www.jjwdz.com