HTx8--600 VDRM = 600 V HTx8-600 IT(RMS) = 8.0 A 600V 8A TRIAC 1.T1 2. T2 3. Gate FEATURES TO-220 TO-220F 1 1 Repetitive Peak Off-State Voltage: 600V R.M.S On –State Current (IT(RMS) = 8A) High Commutation dv/dt 2 2 3 HTP8-600 3 HTS8-600 General Description The TRIAC HTP8-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings Symbol VDRM (Ta=25℃) Parameter Repetitive Peak Off-State Voltage Value Units 600 V 8 A R.M.S On-State Current (Ta = 105℃) HTP8-600 R.M.S On-State Current (Tc = 89℃) HTS8-600 ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 50Hz 80 A 60Hz 88 A VGM Peak Gate Voltage 10 V IGM Peak Gate Current 2 A PGM Peak Gate Power Dissipation 5 W VISO Isolation Breakdown Boltate, AC RMS 1Min 1500 V TSTG Storage Temperature Range -40 to +125 ℃ Operating Temperature -40 to +125 ℃ IT(RMS) TJ (HTS8-600 only) ◎ SEMIHOW REV.A0,Dec 2010 Symbol (Ta=25℃) Parameter Test Conditions Min Typ Max Units 30 mA IGT Gate Trigger Current VD=6V, RL=10Ω 1+, 1-, 3- VGT Gate Trigger Voltage VD=6V, RL=10Ω 1+, 1-, 3- VGD Non Trigger Gate Voltage TJ=125℃, VD=1/2VDRM 0.2 V Critical Rate of Rise of Off-State Voltage at Communication TJ=125℃, VD=2/3VDRM (di/dt)c=4A/ms 5.0 V/uS (dv/dt)c IH 1.5 Holding Current 15 IDRM Repetitive Peak Off-State Current VD=VDRM, Single Phase Half Wave, TJ=125℃ VTM Peak On-State Voltage IT=12A, Inst, Measurement V mA 2.0 mA 1.4 V Thermal Characteristics Symbol RθJC Parameter Thermal Resistance Test Conditions Junction to Case Max Units HTP8-600 Case Min Typ 2 ℃/W HTS8-600 3.7 ℃/W ◎ SEMIHOW REV.A0,Dec 2010 HTx8--600 Electrical Characteristics HTx8--600 Typical Characteristics Fig 1. Gate Characteristics Fig 2. On-State Voltage On-Sta ate Current [A] Gate e Voltage [V] 10 1 0.1 101 102 103 On-State Voltage [V] Gate Current [mA] Fig 4. On-State Current vs. Maximum power Dissipation Power Dissipation [W] Fig 3. Gate Trigger Voltage vs. Junction Temperature RMS On-State Current [A] Junction Temperature [℃] Fig 6. Surge On-State Current Rating (Non-Repetitive) Allowable e Case Temp [℃] Surge On-State Current [A] Fig 5. On-State Current vs. Allowable Case Temperature 100 RMS On-State Current [A] 101 102 Time [Cycles] ◎ SEMIHOW REV.A0,Dec 2010 Fig 7. Gate Trigger Current vs. Junction Temperature Transsient Thermal Imped dance [℃/W] Fig 8. Transient Thermal Impedance Junction Temperature [℃] Time [Sec] Fig 9. Gate Trigger Characteristics Test Circuit ◎ SEMIHOW REV.A0,Dec 2010 HTx8--600 Typical Characteristics HTx8--600 Package Dimension HTP8-600 HTP8(TO(TO -220) 9.90±0.20 ±0 6.50±0.20 1.30±0.20 9.19±0.20 2.80±0.220 1.27±0.20 1.52±0.20 4.50±0.20 ±0 20 2 40±0.20 2.40 3.02±0.20 13.08±0.20 15.70±0.20 . φ3 60 0 .2 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,Dec 2010 HTx8--600 Package Dimension HTS8-600 HTS8(TO(TO -220F) ±0.20 ±0.20 .20 ±0 ±0 20 2 54±0.20 2.54 6.68±0.20 0.70±0.20 12.42±0.20 3.30±±0.20 ±0 20 2.76 2 76±0.20 1.47max 9.75±0.20 15.87±00.20 .1 8 φ3 0 20 0.80 0 80±0.20 0 20 0.50 0 50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,Dec 2010