SemiHow HTX8-600 600v 8a triac Datasheet

HTx8--600
VDRM = 600 V
HTx8-600
IT(RMS) = 8.0 A
600V 8A TRIAC
1.T1 2. T2 3. Gate
FEATURES
TO-220
TO-220F
1
1
 Repetitive Peak Off-State Voltage: 600V
 R.M.S On –State Current (IT(RMS) = 8A)
 High Commutation dv/dt
2
2
3
HTP8-600
3
HTS8-600
General Description
The TRIAC HTP8-600 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings
Symbol
VDRM
(Ta=25℃)
Parameter
Repetitive Peak Off-State Voltage
Value
Units
600
V
8
A
R.M.S On-State Current (Ta = 105℃)
HTP8-600
R.M.S On-State Current (Tc = 89℃)
HTS8-600
ITSM
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
50Hz
80
A
60Hz
88
A
VGM
Peak Gate Voltage
10
V
IGM
Peak Gate Current
2
A
PGM
Peak Gate Power Dissipation
5
W
VISO
Isolation Breakdown Boltate, AC RMS 1Min
1500
V
TSTG
Storage Temperature Range
-40 to +125
℃
Operating Temperature
-40 to +125
℃
IT(RMS)
TJ
(HTS8-600 only)
◎ SEMIHOW REV.A0,Dec 2010
Symbol
(Ta=25℃)
Parameter
Test Conditions
Min
Typ
Max
Units
30
mA
IGT
Gate Trigger Current
VD=6V, RL=10Ω
1+, 1-, 3-
VGT
Gate Trigger Voltage
VD=6V, RL=10Ω
1+, 1-, 3-
VGD
Non Trigger Gate Voltage
TJ=125℃, VD=1/2VDRM
0.2
V
Critical Rate of Rise of Off-State
Voltage at Communication
TJ=125℃, VD=2/3VDRM
(di/dt)c=4A/ms
5.0
V/uS
(dv/dt)c
IH
1.5
Holding Current
15
IDRM
Repetitive Peak Off-State Current
VD=VDRM, Single Phase
Half Wave, TJ=125℃
VTM
Peak On-State Voltage
IT=12A, Inst, Measurement
V
mA
2.0
mA
1.4
V
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance
Test Conditions
Junction to Case
Max
Units
HTP8-600
Case
Min
Typ
2
℃/W
HTS8-600
3.7
℃/W
◎ SEMIHOW REV.A0,Dec 2010
HTx8--600
Electrical Characteristics
HTx8--600
Typical Characteristics
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
On-Sta
ate Current [A]
Gate
e Voltage [V]
10
1
0.1
101
102
103
On-State Voltage [V]
Gate Current [mA]
Fig 4. On-State Current
vs. Maximum power Dissipation
Power Dissipation [W]
Fig 3. Gate Trigger Voltage
vs. Junction Temperature
RMS On-State Current [A]
Junction Temperature [℃]
Fig 6. Surge On-State Current
Rating (Non-Repetitive)
Allowable
e Case Temp [℃]
Surge On-State Current [A]
Fig 5. On-State Current
vs. Allowable Case Temperature
100
RMS On-State Current [A]
101
102
Time [Cycles]
◎ SEMIHOW REV.A0,Dec 2010
Fig 7. Gate Trigger Current
vs. Junction Temperature
Transsient Thermal
Imped
dance [℃/W]
Fig 8. Transient Thermal
Impedance
Junction Temperature [℃]
Time [Sec]
Fig 9. Gate Trigger Characteristics Test Circuit
◎ SEMIHOW REV.A0,Dec 2010
HTx8--600
Typical Characteristics
HTx8--600
Package Dimension
HTP8-600
HTP8(TO(TO
-220)
9.90±0.20
±0
6.50±0.20
1.30±0.20
9.19±0.20
2.80±0.220
1.27±0.20
1.52±0.20
4.50±0.20
±0 20
2 40±0.20
2.40
3.02±0.20
13.08±0.20
15.70±0.20
.
φ3
60
0
.2
0.80±0.20
2.54typ
2.54typ
0.50±0.20
◎ SEMIHOW REV.A0,Dec 2010
HTx8--600
Package Dimension
HTS8-600
HTS8(TO(TO
-220F)
±0.20
±0.20
.20
±0
±0 20
2 54±0.20
2.54
6.68±0.20
0.70±0.20
12.42±0.20
3.30±±0.20
±0 20
2.76
2
76±0.20
1.47max
9.75±0.20
15.87±00.20
.1 8
φ3
0 20
0.80
0
80±0.20
0 20
0.50
0
50±0.20
2.54typ
2.54typ
◎ SEMIHOW REV.A0,Dec 2010
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